Radiatively Broadened Incandescent Sources

We study the incandescence of a semiconductor system characterized by a radiatively broadened material excitation. We show that the shape of the emission spectrum and the peak emissivity value are determined by the ratio between radiative and nonradiative relaxation rates of the material mode. Our system is a heavily doped quantum well, exhibiting a collective bright electronic excitation in the mid-infrared. The spontaneous emission rate of this collective mode strongly depends on the emission direction and, uncommonly for an intersubband system, can dominate nonradiative scattering processes. Consequently the incandescence spectrum undergoes strong modifications when the detection angle is varied. Incandescence is modeled solving quantum Langevin equations, including a microscopic description of the collective excitations, decaying into electronic and photonic baths. We demonstrate that the emissivity reaches unity value for a well-defined direction and presents an angular radiative pattern that is very different from that of an oscillating dipole