Anticrossing of spin-split subbands in quasi-one-dimensional wires

In quantum Hall systems, both anticrossings and magnetic phase transitions can occur when opposite-spin Landau levels coincide. Our results indicate that both processes are also possible in quasi-1D quantum wires in an in-plane B field, B-parallel to. Crossings of opposite-spin 1D subbands resemble magnetic phase transitions at zero dc source-drain bias, but display anticrossings at high dc bias. Our data also imply that the well-known 0.7 structure may evolve into a spin-hybridized state in finite dc bias

Evolution of the second lowest extended state as a function of the effective magnetic field in the fractional quantum hall regime

It has been shown that, at a Landau level filling factor v=1/2, a two-dimensional electron system can be mathematically transformed into a composite fermion system interacting with a Chern-Simons gauge field. At v=1/2, the average of this Chern-Simons gauge field cancels the external magnetic field B-ext so that the effective magnetic field B-eff acting on the composite fermions is zero. Away from v=1/2, the composite fermions experience a net effective magnetic field B-eff. We present the first study of the evolution of the second lowest extended state in a vanishing effective magnetic field in the fractional quantum Hall regime. Our result shows that the evolution of the second lowest extended state has a good linear dependence on the effective magnetic field Beff within the composite fermion picture

Interaction effects at crossings of spin-polarized one-dimensional subbands

We report conductance measurements of ballistic one-dimensional (1D) wires defined in GaAs/AlGaAs heterostructures in an in-plane magnetic field, B. When the Zeeman energy is equal to the 1D subband energy spacing, the spin-split subband Nup arrow intersects (N+1)down arrow, where N is the index of the spin-degenerate 1D subband. At the crossing of N=1up arrow and N=2down arrow subbands, there is a spontaneous splitting giving rise to an additional conductance structure evolving from the 1.5(2e(2)/h) plateau. With further increase in B, the structure develops into a plateau and lowers to 2e(2)/h. With increasing temperature and magnetic field the structure shows characteristics of the 0.7 structure. Our results suggest that at low densities a spontaneous spin splitting occurs whenever two 1D subbands of opposite spins cross

Kondo effect from a tunable bound state within a quantum wire

We investigate the conductance of quantum wires with a variable open quantum dot geometry, displaying an exceptionally strong Kondo effect and most of the 0.7 structure characteristics. Our results indicate that the 0.7 structure is not a manifestation of the singlet Kondo effect. However, specific similarities between our devices and many of the clean quantum wires reported in the literature suggest a weakly bound state is often present in real quantum wires

Origin of the oscillator strength of the triplet state of a trion in a magnetic field

The dynamics of the spin-triplet trion state, under high magnetic field in a GaAs/AlGaAs quantum well, are studied using time resolved spectroscopy. The oscillator strength of the triplet transition is shown to rise with increasing electron density, in good agreement with a theoretical model where the trion interacts with excess electrons in the quantum well. This analysis suggests that the spin-triplet trion state, which is expected to be an optically "dark" state, is experimentally observable due to the interactions with the excess electrons, demonstrating that X- cannot be regarded as an isolated three particle complex

Atomically precise placement of single dopants in Si

We demonstrate the controlled incorporation of P dopant atoms in Si(001), presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si(001) and show that it is possible to thermally incorporate P atoms into Si(001) below the H-desorption temperature. Control over the precise spatial location at which P atoms are incorporated was achieved using STM H lithography. We demonstrate the positioning of single P atoms in Si with similar to1 nm accuracy and the creation of nanometer wide lines of incorporated P atoms

Noncollinear paramagnetism of a GaAs two-dimensional hole system.

We have performed transport measurements in tilted magnetic fields in a two-dimensional hole system grown on the surface of a (311)A GaAs crystal. A striking asymmetry of Shubnikov-de Haas oscillations occurs upon reversing the in-plane component of the magnetic field along the low-symmetry [2[over ¯]33] axis. As usual, the magnetoconductance oscillations are symmetric with respect to reversal of the in-plane field component aligned with the high-symmetry [011[over ¯]] axis. Our observations demonstrate that an in-plane magnetic field can generate an out-of-plane component of magnetization in a low-symmetry hole system, creating new possibilities for spin manipulation.This work was supported by the Australian Research Council (ARC) under the DP scheme and by the NSF under Grant No. DMR-1310199. ARH acknowledges an ARC DOR award.This is the accepted manuscript. The final version is available from APS at http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.113.236401

Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields

An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architectureope

Spin-valley phase diagram of the two-dimensional metal-insulator transition

Using symmetry breaking strain to tune the valley occupation of a two-dimensional (2D) electron system in an AlAs quantum well, together with an applied in-plane magnetic field to tune the spin polarization, we independently control the system's valley and spin degrees of freedom and map out a spin-valley phase diagram for the 2D metal-insulator transition. The insulating phase occurs in the quadrant where the system is both spin- and valley-polarized. This observation establishes the equivalent roles of spin and valley degrees of freedom in the 2D metal-insulator transition.Comment: 4 pages, 2 figure

Nonlinear Sigma Model for Disordered Media: Replica Trick for Non-Perturbative Results and Interactions

In these lectures, given at the NATO ASI at Windsor (2001), applications of the replicas nonlinear sigma model to disordered systems are reviewed. A particular attention is given to two sets of issues. First, obtaining non-perturbative results in the replica limit is discussed, using as examples (i) an oscillatory behaviour of the two-level correlation function and (ii) long-tail asymptotes of different mesoscopic distributions. Second, a new variant of the sigma model for interacting electrons in disordered normal and superconducting systems is presented, with demonstrating how to reduce it, under certain controlled approximations, to known ``phase-only'' actions, including that of the ``dirty bosons'' model.Comment: 25 pages, Proceedings of the NATO ASI "Field Theory of Strongly Correlated Fermions and Bosons in Low - Dimensional Disordered Systems", Windsor, August, 2001; to be published by Kluwe