1 research outputs found
Structural Properties of Wurtzite InP–InGaAs Nanowire Core–Shell Heterostructures
We report on growth and characterization
of wurtzite InP–In<sub>1–<i>x</i></sub>Ga<sub><i>x</i></sub>As
core–shell nanowire heterostructures. A range of nanowire structures
with different Ga concentration in the shell was characterized with
transmission electron microscopy and X-ray diffraction. We found that
the main part of the nanowires has a pure wurtzite crystal structure,
with occasional stacking faults occurring only at the top and bottom.
This allowed us to determine the structural properties of wurtzite
In<sub>1–<i>x</i></sub>Ga<sub><i>x</i></sub>As. The InP–In<sub>1–<i>x</i></sub>Ga<sub><i>x</i></sub>As core–shell nanowires show a triangular
and hexagonal facet structure of {1100} and {101Ì…0} planes.
X-ray diffraction measurements showed that the core and the shell
are pseudomorphic along the <i>c</i>-axis, and the strained
axial lattice constant is closer to the relaxed In<sub>1–<i>x</i></sub>Ga<sub><i>x</i></sub>As shell. Microphotoluminescence
measurements of the nanowires show emission in the infrared regime,
which makes them suitable for applications in optical communication