1 research outputs found
Contact Engineering of Molybdenum Ditelluride Field Effect Transistors through Rapid Thermal Annealing
Understanding
and engineering the interface between metal and two-dimensional materials
are of great importance to the research and development of nanoelectronics.
In many cases the interface of metal and 2D materials can dominate
the transport behavior of the devices. In this study, we focus on
the metal contacts of MoTe<sub>2</sub> (molybdenum ditelluride) FETs
(field effect transistors) and demonstrate how to use post-annealing
treatment to modulate their transport behaviors in a controlled manner.
We have also carried out low temperature and transmission electron
microscopy studies to understand the mechanisms behind the prominent
effect of the annealing process. Changes in transport properties are
presumably due to anti-site defects formed at the metal–MoTe<sub>2</sub> interface under elevated temperature. The study provides
more insights into MoTe<sub>2</sub> field effect devices and suggests
guidelines for future optimizations