13 research outputs found

    Reliability Concerns for Flying SiC Power MOSFETs in Space

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    SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed

    Capturing and Modeling Radiation Hardness Assurance throughout the Project Lifecycle

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    This presentation describes how assurance arguments for the radiation reliability of a system can be modeled in Goal Structuring Notation over the life-cycle of a project. A practical implementation of the NASA-STD-8729.1 and Model-Based Mission Assurance

    Reliability Concerns for Flying SiC Power MOSFETs in Space

    Get PDF
    SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed

    Simulation of SEU Cross-sections using MRED under Conditions of Limited Device Information

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    This viewgraph presentation reviews the simulation of Single Event Upset (SEU) cross sections using the membrane electrode assembly (MEA) resistance and electrode diffusion (MRED) tool using "Best guess" assumptions about the process and geometry, and direct ionization, low-energy beam test results. This work will also simulate SEU cross-sections including angular and high energy responses and compare the simulated results with beam test data for the validation of the model. Using MRED, we produced a reasonably accurate upset response model of a low-critical charge SRAM without detailed information about the circuit, device geometry, or fabrication proces

    Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs

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    Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data.peerReviewe

    CommGuard

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    CommGuard

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