Radiation-aware Design for Cubesat Form-Factor Experiment Using Goal Structuring Notation

A Goal Structuring Notation (GSN) model is presented to argue for the radiation reliability of a SEU SCRAM experiment in a CubeSat form-factor for a 1 year old polar LEO mission

Reliability Concerns for Flying SiC Power MOSFETs in Space

SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed

Capturing and Modeling Radiation Hardness Assurance throughout the Project Lifecycle

This presentation describes how assurance arguments for the radiation reliability of a system can be modeled in Goal Structuring Notation over the life-cycle of a project. A practical implementation of the NASA-STD-8729.1 and Model-Based Mission Assurance

Goal Structuring Notation in a Radiation Hardening Assurance Case for COTS-Based Spacecraft

A systematic approach is presented to constructing a radiation assurance case using Goal Structuring Notation (GSN) for spacecraft containing COTS parts. The GSN paradigm is applied to an SRAM single-event upset experiment board designed to fly on a CubeSat in January 2017. A custom software language for development of a GSN assurance case is under development at Vanderbilt. Construction of a radiation assurance case without use of hardened parts or extensive radiation testing is discussed

Reliability Concerns for Flying SiC Power MOSFETs in Space

SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed

Simulation of SEU Cross-sections using MRED under Conditions of Limited Device Information

This viewgraph presentation reviews the simulation of Single Event Upset (SEU) cross sections using the membrane electrode assembly (MEA) resistance and electrode diffusion (MRED) tool using "Best guess" assumptions about the process and geometry, and direct ionization, low-energy beam test results. This work will also simulate SEU cross-sections including angular and high energy responses and compare the simulated results with beam test data for the validation of the model. Using MRED, we produced a reasonably accurate upset response model of a low-critical charge SRAM without detailed information about the circuit, device geometry, or fabrication proces