A new technique for oil backstreaming contamination measurements

Due to the large size and the number of diffusion pumps, space simulation chambers cannot be easily calibrated by the usual test dome method for measuring backstreaming from oil diffusion pumps. In addition, location dependent contamination may be an important parameter of the test. The backstreaming contamination was measured in the Space Power Facility (SPF) near Sandusky, OH, the largest space simulation vacuum test chamber in the U.S.. Small clean silicon wafers placed at all desired measurement sites were used as contamination sensors. The facility used diffusion pumps with DC 705 oil. The thickness of the contamination oil film was measured using ellipsometry. Since the oil did not wet the silicon substrate uniformly, two analysis models were developed to measure the oil film: (1) continuous, homogeneous film; and (2) islands of oil with the islands varying in coverage fraction and height. In both cases, the contamination film refractive index was assumed to be that of DC 705. The second model improved the ellipsometric analysis quality parameter by up to two orders of magnitude, especially for the low coverage cases. Comparison of the two models shows that the continuous film model overestimates the oil volume by less than 50 percent. Absolute numbers for backstreaming are in good agreement with published results for diffusion pumps. Good agreement was also found between the ellipsometric results and measurements done by x-ray photoelectron spectroscopy (XPS) and by scanning electron microscopy (SEM) on examples exposed to the same vacuum runs

Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices

An ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer super lattices grown by MBE at low temperature (500 C) is presented, and results are compared with x ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available Si(x)Ge(1-x) databases is used. It is shown that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, Si(x)Ge(1-x) composition, and oxide thickness without resorting to additional sources of information. It was also noted that we do not observe any strain effect on the E(sub 1) critical point

Dielectric function of InGaAs in the visible

Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X(0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data

On the AdS Higher Spin / O(N) Vector Model Correspondence: degeneracy of the holographic image

We explore the conjectured duality between the critical O(N) vector model and minimal bosonic massless higher spin (HS) theory in AdS. In the boundary free theory, the conformal partial wave expansion (CPWE) of the four-point function of the scalar singlet bilinear is reorganized to make it explicitly crossing-symmetric and closed in the singlet sector, dual to the bulk HS gauge fields. We are able to analytically establish the factorized form of the fusion coefficients as well as the two-point function coefficient of the HS currents. We insist in directly computing the free correlators from bulk graphs with the unconventional branch. The three-point function of the scalar bilinear turns out to be an "extremal" one at d=3. The four-leg bulk exchange graph can be precisely related to the CPWs of the boundary dual scalar and its shadow. The flow in the IR by Legendre transforming at leading 1/N, following the pattern of double-trace deformations, and the assumption of degeneracy of the hologram lead to the CPWE of the scalar four-point function at IR. Here we confirm some previous results, obtained from more involved computations of skeleton graphs, as well as extend some of them from d=3 to generic dimension 2<d<4.Comment: 22 pages, 5 figure

Propagating user interests in ontology-based user model

In this paper we address the problem of propagating user interests in ontology-based user models. Our ontology-based user model (OBUM) is devised as an overlay over the domain ontology. Using ontologies as the basis of the user profile allows the initial user behavior to be matched with existing concepts in the domain ontology. Such ontological approach to user profiling has been proven successful in addressing the cold-start problem in recommender systems, since it allows for propagation from a small number of initial concepts to other related domain concepts by exploiting the ontological structure of the domain. The main contribution of the paper is the novel algorithm for propagation of user interests which takes into account i) the ontological structure of the domain and, in particular, the level at which each domain item is found in the ontology; ii) the type of feedback provided by the user, and iii) the amount of past feedback provided for a certain domain object

Structural investigation of MOVPE-Grown GaAs on Ge by X-ray techniques

The selection of appropriate characterisation methodologies is vital for analysing and comprehending the sources of defects and their influence on the properties of heteroepitaxially grown III-V layers. In this work we investigate the structural properties of GaAs layers grown by Metal-Organic Vapour Phase Epitaxy (MOVPE) on Ge substrates – (100) with 6⁰ offset towards – under various growth conditions. Synchrotron X-ray topography (SXRT) is employed to investigate the nature of extended linear defects formed in GaAs epilayers. Other X-ray techniques, such as reciprocal space mapping (RSM) and triple axis ω-scans of (00l)-reflections (l = 2, 4, 6) are used to quantify the degree of relaxation and presence of antiphase domains (APDs) in the GaAs crystals. The surface roughness is found to be closely related to the size of APDs formed at the GaAs/Ge heterointerface, as confirmed by X-ray diffraction (XRD), as well as atomic force microscopy (AFM), and transmission electron microscopy (TEM)

Structural investigation of MOVPE-Grown GaAs on Ge by X-ray techniques

The selection of appropriate characterisation methodologies is vital for analysing and comprehending the sources of defects and their influence on the properties of heteroepitaxially grown III-V layers. In this work we investigate the structural properties of GaAs layers grown by Metal-Organic Vapour Phase Epitaxy (MOVPE) on Ge substrates – (100) with 6⁰ offset towards – under various growth conditions. Synchrotron X-ray topography (SXRT) is employed to investigate the nature of extended linear defects formed in GaAs epilayers. Other X-ray techniques, such as reciprocal space mapping (RSM) and triple axis ω-scans of (00l)-reflections (l = 2, 4, 6) are used to quantify the degree of relaxation and presence of antiphase domains (APDs) in the GaAs crystals. The surface roughness is found to be closely related to the size of APDs formed at the GaAs/Ge heterointerface, as confirmed by X-ray diffraction (XRD), as well as atomic force microscopy (AFM), and transmission electron microscopy (TEM)

Localized Backreacted Flavor Branes in Holographic QCD

We investigate the perturbative (in $g_s N_{D8}$) backreaction of localized D8 branes in D4-D8 systems including in particular the Sakai Sugimoto model. We write down the explicit expressions of the backreacted metric, dilaton and RR form. We find that the backreaction remains small up to a radial value of $u \ll \ell_s/(g_s N_{D8})$, and that the background functions are smooth except at the D8 sources. In this perturbative window, the original embedding remains a solution to the equations of motion. Furthermore, the fluctuations around the original embedding, describing scalar mesons, do not become tachyonic due to the backreaction in the perturbative regime. This is is due to a cancelation between the DBI and CS parts of the D8 brane action in the perturbed background.Comment: 1+48 pages (7 figures) + 15 pages, citations added & minor correction