Almost overlap-free words and the word problem for the free Burnside semigroup satisfying x^2=x^3

In this paper we investigate the word problem of the free Burnside semigroup satisfying x^2=x^3 and having two generators. Elements of this semigroup are classes of equivalent words. A natural way to solve the word problem is to select a unique "canonical" representative for each equivalence class. We prove that overlap-free words and so-called almost overlap-free words (this notion is some generalization of the notion of overlap-free words) can serve as canonical representatives for corresponding equivalence classes. We show that such a word in a given class, if any, can be efficiently found. As a result, we construct a linear-time algorithm that partially solves the word problem for the semigroup under consideration.Comment: 33 pages, submitted to Internat. J. of Algebra and Compu

Field induced evolution of regular and random 2D domain structures and shape of isolated domains in LiNbO₃ and LiTaO₃

The shapes of isolated domains produced by application of the uniform external electric field in different experimental conditions were investigated experimentally in single crystalline lithium niobate LiNbO3 and lithium tantalate LiTaO3. The study of the domain kinetics by computer simulation and experimentally by polarization reversal of the model structure using two-dimensional regular electrode pattern confirms applicability of the kinetic approach to explanation of the experimentally observed evolution of the domain shape and geometry of the domain structure. It has been shown that the fast domain walls strictly oriented along X directions appear after domain merging

Gas Sensing with h-BN Capped MoS2 Heterostructure Thin Film Transistors

We have demonstrated selective gas sensing with molybdenum disulfide (MoS2) thin films transistors capped with a thin layer of hexagonal boron nitride (h-BN). The resistance change was used as a sensing parameter to detect chemical vapors such as ethanol, acetonitrile, toluene, chloroform and methanol. It was found that h-BN dielectric passivation layer does not prevent gas detection via changes in the source-drain current in the active MoS2 thin film channel. The use of h-BN cap layers (thickness H=10 nm) in the design of MoS2 thin film gas sensors improves device stability and prevents device degradation due to environmental and chemical exposure. The obtained results are important for applications of van der Waals materials in chemical and biological sensing.Comment: 3 pages; 4 figure

Plasma mechanisms of resonant terahertz detection in two-dimensional electron channel with split gates

We analyze the operation of a resonant detector of terahertz (THz) radiation based on a two-dimensional electron gas (2DEG) channel with split gates. The side gates are used for the excitation of plasma oscillations by incoming THz radiation and control of the resonant plasma frequencies. The central gate provides the potential barrier separating the source and drain portions of the 2DEG channel. Two possible mechanisms of the detection are considered: (1) modulation of the ac potential drop across the barrier and (2) heating of the 2DEG due to the resonant plasma-assisted absorption of THz radiation followed by an increase in thermionic dc current through the barrier. Using the device model we calculate the frequency and temperature dependences of the detector responsivity associated with both dynamic and heating (bolometric) mechanisms. It is shown that the dynamic mechanisms dominates at elevated temperatures, whereas the heating mechanism provides larger contribution at low temperatures, T=35-40 K.Comment: 7 pages, 4 figure

Analytical device model for graphene bilayer field-effect transistors using weak nonlocality approximation

We develop an analytical device model for graphene bilayer field-effect transistors (GBL-FETs) with the back and top gates. The model is based on the Boltzmann equation for the electron transport and the Poisson equation in the weak nonlocality approximation for the potential in the GBL-FET channel. The potential distributions in the GBL-FET channel are found analytically. The source-drain current in GBL-FETs and their transconductance are expressed in terms of the geometrical parameters and applied voltages by analytical formulas in the most important limiting cases. These formulas explicitly account for the short-gate effect and the effect of drain-induced barrier lowering. The parameters characterizing the strength of these effects are derived. It is shown that the GBL-FET transconductance exhibits a pronounced maximum as a function of the top-gate voltage swing. The interplay of the short-gate effect and the electron collisions results in a nonmonotonic dependence of the transconductance on the top-gate length.Comment: 12 pages, 7 figure

Low-noise top-gate graphene transistors

We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by 20 nm of HfO2 from the single-layer graphene channels. The measurements revealed low flicker noise levels with the normalized noise spectral density close to 1/f (f is the frequency) and Hooge parameter below 2 x 10^-3. The analysis of the noise spectral density dependence on the top and bottom gate biases helped us to elucidate the noise sources in these devices and develop a strategy for the electronic noise reduction. The obtained results are important for all proposed graphene applications in electronics and sensors.Comment: 9 pages, 4 figure

Transition Property for α\alpha-Power Free Languages with α≥2\alpha\geq 2 and k≥3k\geq 3 Letters

In 1985, Restivo and Salemi presented a list of five problems concerning power free languages. Problem $4$ states: Given $\alpha$-power-free words $u$ and $v$, decide whether there is a transition from $u$ to $v$. Problem $5$ states: Given $\alpha$-power-free words $u$ and $v$, find a transition word $w$, if it exists. Let $\Sigma_k$ denote an alphabet with $k$ letters. Let $L_{k,\alpha}$ denote the $\alpha$-power free language over the alphabet $\Sigma_k$, where $\alpha$ is a rational number or a rational "number with $+$". If $\alpha$ is a "number with $+$" then suppose $k\geq 3$ and $\alpha\geq 2$. If $\alpha$ is "only" a number then suppose $k=3$ and $\alpha>2$ or $k>3$ and $\alpha\geq 2$. We show that: If $u\in L_{k,\alpha}$ is a right extendable word in $L_{k,\alpha}$ and $v\in L_{k,\alpha}$ is a left extendable word in $L_{k,\alpha}$ then there is a (transition) word $w$ such that $uwv\in L_{k,\alpha}$. We also show a construction of the word $w$

Flicker Noise in Bilayer Graphene Transistors

We present the results of the experimental investigation of the low - frequency noise in bilayer graphene transistors. The back - gated devices were fabricated using the electron beam lithography and evaporation. The charge neutrality point for the fabricated transistors was around 10 V. The noise spectra at frequencies above 10 - 100 Hz were of the 1/f - type with the spectral density on the order of 10E-23 - 10E-22 A2/Hz at the frequency of 1 kHz. The deviation from the 1/f spectrum at the frequencies below 10 -100 Hz indicates that the noise is of the carrier - number fluctuation origin due to the carrier trapping by defects. The Hooge parameter of 10E-4 was extracted for this type of devices. The gate dependence of the noise spectral density suggests that the noise is dominated by the contributions from the ungated part of the device channel and by the contacts. The obtained results are important for graphene electronic applications