Recrystallization and Reactivation of Dopant Atoms in Ion-Implanted Silicon Nanowires

Recrystallization of silicon nanowires (SiNWs) after ion implantation strongly depends on the ion doses and species. Full amorphization by high-dose implantation induces polycrystal structures in SiNWs even after high-temperature annealing, with this tendency more pronounced for heavy ions. Hot-implantation techniques dramatically suppress polycrystallization in SiNWs, resulting in reversion to the original single-crystal structures and consequently high reactivation rate of dopant atoms. In this study, the chemical bonding states and electrical activities of implanted boron and phosphorus atoms were evaluated by Raman scattering and electron spin resonance, demonstrating the formation of p- and n-type SiNWs

Nanoporous Carbon Sensor with Cage-in-Fiber Structure: Highly Selective Aniline Adsorbent toward Cancer Risk Management

Carbon nanocage-embedded nanofibrous film works as a highly selective adsorbent of carcinogen aromatic amines. By using quartz crystal microbalance techniques, even ppm levels of aniline can be repetitively detected, while other chemical compounds such as water, ammonia, and benzene give negligible responses. This technique should be applicable for high-throughput cancer risk management