Influence of uv radiation and discharge plasma on feed wheat seeds for acceleration of plants

In a rapidly changing unstable climate, the possible acceleration of plant growth and ripening is critical to food security in at least the region. This problem is especially relevant for areas with risky farming, which includes almost all of Siberia, and the Tomsk region in particular. Here we present the next results of a study of the effect of UV and ionizing radiation on cereals, namely, Iren wheat

Cleaning of niobium surface by plasma of diffuse discharge at atmospheric pressure

Elements composition of niobium surface before and after plasma treatment by runaway electron preionized diffuse discharge was investigated in atmospheric pressure nitrogen flow by means of an Auger electron spectroscopy. Surface characterizations obtained from Auger spectra show that plasma treatment by diffuse discharge after exposure of 120000 pulses provides ultrafine surface cleaning from carbon contamination. Moreover, the surface free energy of the treated specimens increased up to 3 times, that improve its adhesion property

The impact of the plasma volume discharge in the atmospheric-pressure air on the distribution of the surface potential in a V-defect region of epitaxial HgCdTe films

In the present report we demonstrate the experimental data obtained as a result of studying the impact of nanosecond plasma volume discharge in the atmospheric-pressure air on the distribution of the surface potential in the V-defect regions of epitaxial HgCdTe films. The experimental data obtained for the variation of the contact potential difference (ΔCPD) between the V-defect and the main matrix of the epitaxial film show that the mean value of ΔCPD for the original surface differs from the one for the irradiated surface for 55 eV. At the same time the mean value of ΔCPD changes its sign indicating that the original surface of the epitaxial HgCdTe film predominantly contains the grains with increased cadmium content while after the irradiation the grains possess an increased content of mercury. Therefore, during the irradiation process a decrease of the mercury content in the near-surface region of the semiconductor takes place resulting in the alteration of the electrophysical properties in the film's near-surface region

Electro-physical characteristics of a HgCdTe epitaxial films upon exposure by a volume discharge in air at atmospheric pressure

In this paper the influence of the volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of epitaxial films HgCdTe (MCT) of p-type conductivity. It is suggested that after exposure on film surface oxide layer was formed. This layer has a built positive charge that leads to the formation of an inversion layer which "shunts" the rest of the sample so that the measured field dependence of Hall coefficient corresponds to the material of n-type of conductivity

Changes in the electro-physical properties of MCT epitaxial films affected by a plasma volume discharge induced by an avalanche beam in atmospheric-pressure air

In this paper the influence of the plasma volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of epitaxial films HgCdTe (MCT) films are discussed. The experimental data show that the action of pulses of nanosecond volume discharge in air at atmospheric pressure leads to changes in the electrophysical properties of MCT epitaxial films due to formation of a near-surface high- conductivity layer of the n-type conduction. The preliminary results show that it is possible to use such actions in the development of technologies for the controlled change of the properties of MCT

Solar wind detector based on Cherenkov radiation in diamond

To date a relevant task is the development of miniature Cherenkov detectors that could be placed on microsatellites for studying near Earth space, in particular, for observing the charged particles flows (solar wind) captured by the Earth's magnetic field. Solar activity can negatively affect the exploration of outer space, in particular, lead to the failure of the electronic equipment of spacecraft, which leads to significant financial losses. Therefore, the problem of monitoring and space weather forecasting is a very important task

Prototype of a diamond based UV source as an emitter

The report deals with the results of a study of the exciton cathodoluminescence of diamond, as well as the creation of a prototype of a cathodoluminescent ultraviolet source based on it

Changes in the exciton cathodoluminescence spectra of diamond at elevated temperatures

The study of exciton cathodoluminescence in diamond is not only scientific but also practical importance. Ultraviolet radiation at a wavelength of 235 nm can be used for disinfection, activation of surface reactions, photochemistry, and more. Thus, diamond is a promising material for creating a cathodoluminescent source of ultraviolet radiation

Detection of high energy electrons by Cherenkov radiation in diamond

Cherenkov detectors for detection of high energy particles are widely used. To obtain the necessary information about the characteristics of the particles (energy, type, etc.) can by analyze of the Cherenkov radiation (CR). Cherenkov detectors in various fields of science and technology are used. However, there are Cherenkov detectors applications, for example, in thermonuclear reactors and spacecraft, where special requirements are imposed on the radiator material. One of the promising radiator materials with high temperature and radiation resistance is diamond. In addition, the diamond has a low energy threshold for CR due to its high refractive inde

Influence of complex impact of the picosecond electron beam and volume discharge in atmospheric-pressure air on the electronic properties of MCT epitaxial films surface

In the present report we studied the distribution of surface potential of the HgCdTe epitaxial films grown by molecular beam epitaxy after the impact of picosecond electron beam and volume discharge in atmospheric-pressure air. The surface potential distribution was studied by the Kelvin Force Probe Microscopy. The experimental data obtained for the variation of the contact potential difference (ΔCPD) between the V-defect and the main matrix of the epitaxial film. The investigation of the origin epitaxial films show that variation of the spatial distribution of surface potential in the V-defect region can be related to the variation of the material composition. The experimental data obtained for the irradiated samples show that the mean value of ΔCPD for the original surface differs from the one for the irradiated surface for 55 eV. At the same time the mean value of ΔCPD changes its sign indicating that the original surface of the epitaxial HgCdTe film predominantly contains the grains with increased cadmium content while after the irradiation the grains possess an increased content of mercury. Therefore, during the irradiation process a decrease of the mercury content in the near-surface region of the semiconductor takes place resulting in the alteration of the electrophysical properties in the films near-surface region. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only