Probing topological quantum matter with scanning tunnelling microscopy

The search for topological phases of matter is evolving towards strongly interacting systems, including magnets and superconductors, where exotic effects emerge from the quantum-level interplay between geometry, correlation and topology. Over the past decade or so, scanning tunnelling microscopy has become a powerful tool to probe and discover emergent topological matter, because of its unprecedented spatial resolution, high-precision electronic detection and magnetic tunability. Scanning tunnelling microscopy can be used to probe various topological phenomena, as well as complement results from other techniques. We discuss some of these proof-of-principle methodologies applied to probe topology, with particular attention to studies performed under a tunable vector magnetic field, which is a relatively new direction of recent focus. We then project the future possibilities for atomic-resolution tunnelling methods in providing new insights into topological matter

BaFe2As2 Surface Domains and Domain Walls: Mirroring the Bulk Spin Structure

High-resolution scanning tunneling microscopy (STM) measurements on BaFe2As2-one of the parent compounds of the iron-based superconductors-reveals a (1x1) As-terminated unit cell on the (001) surface. However, there are significant differences of the surface unit cell compared to the bulk: only one of the two As atoms in the unit cell is imaged and domain walls between different (1x1) regions display a C2 symmetry at the surface. It should have been C2v if the STM image reflected the geometric structure of the surface or the orthorhombic bulk. The inequivalent As atoms and the bias dependence of the domain walls indicate that the origin of the STM image is primarily electronic not geometric. We argue that the surface electronic topography mirrors the bulk spin structure of BaFe2As2, via strong orbital-spin coupling

Surface Geometric and Electronic Structure of BaFe2As2(001)

BaFe2As2 exhibits properties characteristic of the parent compounds of the newly discovered iron (Fe)-based high-TC superconductors. By combining the real space imaging of scanning tunneling microscopy/spectroscopy (STM/S) with momentum space quantitative Low Energy Electron Diffraction (LEED) we have identified the surface plane of cleaved BaFe2As2 crystals as the As terminated Fe-As layer - the plane where superconductivity occurs. LEED and STM/S data on the BaFe2As2(001) surface indicate an ordered arsenic (As) - terminated metallic surface without reconstruction or lattice distortion. It is surprising that the STM images the different Fe-As orbitals associated with the orthorhombic structure, not the As atoms in the surface plane.Comment: 12 pages, 4 figure

Inhomogeneous d-wave superconducting state of a doped Mott insulator

Recent scanning tunneling microscope (STM) measurements discovered remarkable electronic inhomogeneity, i.e. nano-scale spatial variations of the local density of states (LDOS) and the superconducting energy gap, in the high-Tc superconductor BSCCO. Based on the experimental findings we conjectured that the inhomogeneity arises from variations in local oxygen doping level and may be generic of doped Mott insulators which behave rather unconventionally in screening the dopant ionic potentials at atomic scales comparable to the short coherence length. Here, we provide theoretical support for this picture. We study a doped Mott insulator within a generalized t-J model, where doping is accompanied by ionic Coulomb potentials centered in the BiO plane. We calculate the LDOS spectrum, the integrated LDOS, and the local superconducting gap, make detailed comparisons to experiments, and find remarkable agreement with the experimental data. We emphasize the unconventional screening in a doped Mott insulator and show that nonlinear screening dominates at nano-meter scales which is the origin of the electronic inhomogeneity. It leads to strong inhomogeneous redistribution of the local hole density and promotes the notion of a local doping concentration. We find that the inhomogeneity structure manifests itself at all energy scales in the STM tunneling differential conductance, and elucidate the similarity and the differences between the data obtained in the constant tunneling current mode and the same data normalized to reflect constant tip-to-sample distance. We also discuss the underdoped case where nonlinear screening of the ionic potential turns the spatial electronic structure into a percolative mixture of patches with smaller pairing gaps embedded in a background with larger gaps to single particle excitations.Comment: 19 pages, final versio