Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors

Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated, large, 160 micron x 200 micron Hall bars, and up to 4000 cm^2/Vs, from top-gated, small, 1 micron x 1.5 micron Hall bars. The growth process involved a combination of a cleaning step of the SiC in a Si-containing gas, followed by an annealing step in Argon for epitaxial graphene formation. The structure and morphology of this graphene has been characterized using AFM, HRTEM, and Raman spectroscopy. Furthermore, top-gated radio frequency field effect transistors (RF-FETs) with a peak cutoff frequency fT of 100 GHz for a gate length of 240 nm were fabricated using epitaxial graphene grown on the Si face of SiC that exhibited Hall mobilities up to 1450 cm^2/Vs from ungated Hall bars and 1575 cm^2/Vs from top-gated ones. This is by far the highest cut-off frequency measured from any kind of graphene.Comment: 30 pages (double line spacing). Submitte

High-order harmonic generation in Xe, Kr, and Ar driven by a 2.1-\mu m source: high-order harmonic spectroscopy under macroscopic effects

We experimentally and numerically study the atomic response and pulse propagation effects of high-order harmonics generated in Xe, Kr, and Ar driven by a 2.1-\mu m infrared femtosecond light source. The light source is an optical parametric chirped-pulse amplifier, and a modified strong-field approximation and 3-dimensional pulse propagation code are used for the numerical simulations. The extended cutoff in the long-wavelength driven high-harmonic generation has revealed the spectral shaping of high-order harmonics due to the atomic structure (or photo-recombination cross-section) and the macroscopic effects, which are the main factors of determining the conversion efficiency besides the driving wavelength. Using precise numerical simulations to determine the macroscopic electron wavepacket, we are able to extract the photo-recombination cross-sections from experimental high-order harmonic spectra in the presence of macroscopic effects. We have experimentally observed that the macroscopic effects shift the observed Cooper minimum of Kr from 80 eV to 60-70 eV and wash out the Cooper minimum of Ar. Measured high-harmonic conversion efficiencies per harmonic near the cutoff are ~10^{-9} for all three gases.Comment: 19 pages, 8 figure

Strong and broadly tunable plasmon resonances in thick films of aligned carbon nanotubes

Low-dimensional plasmonic materials can function as high quality terahertz and infrared antennas at deep subwavelength scales. Despite these antennas' strong coupling to electromagnetic fields, there is a pressing need to further strengthen their absorption. We address this problem by fabricating thick films of aligned, uniformly sized carbon nanotubes and showing that their plasmon resonances are strong, narrow, and broadly tunable. With thicknesses ranging from 25 to 250 nm, our films exhibit peak attenuation reaching 70%, quality factors reaching 9, and electrostatically tunable peak frequencies by a factor of 2.3x. Excellent nanotube alignment leads to the attenuation being 99% linearly polarized along the nanotube axis. Increasing the film thickness blueshifts the plasmon resonators down to peak wavelengths as low as 1.4 micrometers, promoting them to a new near-infrared regime in which they can both overlap the S11 nanotube exciton energy and access the technologically important infrared telecom band.Comment: 19 pages, 5 figures, main text followed by supporting informatio

Nanoscale control of exchange bias with BiFeO3 thin films

We demonstrate a direct correlation between the domain structure of multiferroic BiFeO3 thin films and exchange bias of Co0.9Fe0.1/BiFeO3 heterostructures. Two distinct types of interactions, an enhancement of the coercive field (exchange enhancement) and an enhancement of the coercive field combined with large shifts of the hysteresis loop (exchange bias), have been observed in these heterostructures, which depend directly on the type and crystallography of the nanoscale (2 nm) domain walls in the BiFeO3 film. We show that the magnitude of the exchange bias interaction scales with the length of 109 degree ferroelectric domain walls in the BiFeO3 thin films which have been probed via piezoresponse force microscopy and x-ray magnetic circular dichroism.Comment: Accepted to Nano Letters May 200