Transition from Ferromagnetism to Antiferromagnetism in Ga1−x_{1-x}Mnx_xN

Using density functional theory, we study the magnetic stability of the Ga$_{1-x}$Mn$_x$N alloy system. We show that unlike Ga$_{1-x}$Mn$_x$As, which shows only ferromagnetic (FM) phase, Ga$_{1-x}$Mn$_x$N can be stable in either FM or antiferromagnetic phases depending on the alloy concentration. The magnetic order can also be altered by applying pressure or with charge compensation. A unified model is used to explain these behaviors.Comment: 4 pages, 4 figure

Core-Shell Interface-Oriented Synthesis of Bowl-Structured Hollow Silica Nanospheres Using Self-Assembled ABC Triblock Copolymeric Micelles

© 2018 American Chemical Society. Hollow porous silica nanospheres (HSNs) are emerging classes of cutting-edge nanostructured materials. They have elicited much interest as carriers of active molecule delivery due to their amorphous chemical structure, nontoxic nature, and biocompatibility. Structural development with hierarchical morphology is mostly required to obtain the desired performance. In this context, large through-holes or pore openings on shells are desired so that the postsynthesis loading of active-molecule onto HSNs via a simple immersion method can be facilitated. This study reports the synthesis of HSNs with large through-holes or pore openings on shells, which are subsequently termed bowl-structured hollow porous silica nanospheres (BHSNs). The synthesis of BHSNs was mediated by the core-shell interfaces of the core-shell corona-structured micelles obtained from a commercially available ABC triblock copolymer (polystyrene-b-poly(2-vinylpyridine)-b-poly(ethylene oxide) (PS-P2VP-PEO)). In this synthesis process, polymer@SiO2 composite structure was formed because of the deposition of silica (SiO2) on the micelles' core. The P2VP block played a significant role in the hydrolysis and condensation of the silica precursor, i.e., tetraethylorthosilicate (TEOS) and then maintaining the shell's growth. The PS core of the micelles built the void spaces. Transmission electron microscopy (TEM) images revealed a spherical hollow structure with an average particle size of 41.87 ± 3.28 nm. The average diameter of void spaces was 21.71 ± 1.22 nm, and the shell thickness was 10.17 ± 1.68 nm. According to the TEM image analysis, the average large pore was determined to be 15.95 nm. Scanning electron microscopy (SEM) images further confirmed the presence of large single pores or openings in shells. These were formed as a result of the accumulated ethanol on the PS core acting to prevent the growth of silica

Chronic deep brain stimulation of subthalamic and anterior thalamic nuclei for controlling refractory partial epilepsy

Summary Objectives. Experimental data and case reports of intractable epilepsy patients treated with deep brain stimulation (DBS) of the internal nuclei suggest a considerable anticonvulsant effect. We intended to describe the results of DBS on subthalamic nuclei and anterior thalamic nuclei (STN and ATN) from our patients and to evaluate the long-term efficiency and safety of DBS for controlling intractable epilepsy. Methods. Six patients with refractory epilepsy and inadequate for surgery were implanted with DBS electrodes (3 in STN and 3 in ATN, respectively), switched on after a week of insertion followed by chronological observation. Seizure counts were monitored and compared with pre-implantation baseline. Results. There was significant clinical improvement in respect of reduction of seizure frequency as well as the alleviation of ictal severity in almost patients. The mean reduction in seizure frequency was 62.3% (49.1% from STN vs. 75.4% from ATN). Except one patient (patient 3) with accidental infection on the right anterior chest, no complication or withdrawal of DBS was seen during our study. Conclusion. DBS on STN and ATN demonstrated their clear efficiency and relative safety comparable or superior to previous studies during long term follow-up. Subsequent, well designed studies warrant the further increase of the knowledge about antiepileptic effect of DBS

Electric Conductivity of the Zero-gap Semiconducting State in Alpha-(BEDT-TTF)2I3 Salt

The electric conductivity which reveals the zero gap semiconducting (ZGS) state has been investigated as the function of temperature $T$ and life time $\tau$ in order to understand the ZGS state in quarter-filled $\alpha$-(BEDT-TTF)$_2$I$_3$ salt with four sites in the unit cell. By treating $\tau$ as a parameter and making use of the one-loop approximation, it is found that the conductivity is proportional to $T$ and $\tau$ for $k_B\gg\hbar/\tau$ and independent of $T$ and $\tau$ for $k_B T\ll\hbar/\tau$. Further the conductivity being independent of $T$ in the ZGS state is examined in terms of Born approximation for the impurity cattering.Comment: 5 pages, 4 figures, submitted to J. Phys. Soc. Jp

Dynamics of an electron in finite and infinite one dimensional systems in presence of electric field

We study,numerically, the dynamical behavior of an electron in a two site nonlinear system driven by dc and ac electric field separately. We also study, numerically, the effect of electric field on single static impurity and antidimeric dynamical impurity in an infinite 1D chain to find the strength of the impurities. Analytical arguments for this system have also been given.Comment: File Latex, 8 Figures available on reques

Possible Verification of Tilted Anisotropic Dirac Cone in \alpha-(BEDT-TTF)_2 I_3 Using Interlayer Magnetoresistance

It is proposed that the presence of a tilted and anisotropic Dirac cone can be verified using the interlayer magnetoresistance in the layered Dirac fermion system, which is realized in quasi-two-dimensional organic compound \alpha-(BEDT-TTF)_2 I_3. Theoretical formula is derived using the analytic Landau level wave functions and assuming local tunneling of electrons. It is shown that the resistivity takes the maximum in the direction of the tilt if anisotropy of the Fermi velocity of the Dirac cone is small. The procedure is described to determine the parameters of the tilt and anisotropy.Comment: 4 pages, 4 figures, corrected Fig.

Development of wirelessly-powered, extracranial brain activator (ECBA) in a large animal model for the future non-invasive human neuromodulation

As transcranial electrical stimulation (tES) is an emerging and promising technique for neuromodulation, we developed a novel device; wirelessly-powered, extracranial brain activator (ECBA), which is mounted subcutaneously, and its neuromodulation effect was investigated. The oscillatory changes in electrocorticography (EcoG) were analyzed from two types of stimulation. Two weeks prior to the recording experiment, we underwent surgery for implantation of subdural strips and ECBA module over centroparietal regions of anesthetized beagles. Low-frequency stimulation (LFS) and subsequent high-frequency stimulation (HFS) protocols (600 pulses respectively) were applied. Then, the power changes before and after each stimulation in five different bands were compared. A significantly larger voltage difference with subcutaneous than transcutaneous stimulation measured at EcoG channels indicated a substantial current attenuation between the skin and skull. Compared with the baseline, all subjects showed consistently decreased delta power and increased gamma power after HFS. LFS also induced a similar, but opposite, pattern of power change in four beagles. The results from this study indicate that LFS and HFS with our novel ECBA can consistently and effectively modulate neural activity of the cortex, inducing neural inhibition and facilitation functions, respectively. Future studies are necessary to further ensuring a consistent efficacy and long-term safety.11Ysciescopu

A transverse current rectification in graphene superlattice

A model for energy spectrum of superlattice on the base of graphene placed on the striped dielectric substrate is proposed. A direct current component which appears in that structure perpendicularly to pulling electric field under the influence of elliptically polarized electromagnetic wave was derived. A transverse current density dependence on pulling field magnitude and on magnitude of component of elliptically polarized wave directed along the axis of a superlattice is analyzed.Comment: 12 pages, 6 figure

Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2

The linear dispersion relation in graphene[1,2] gives rise to a surprising prediction: the resistivity due to isotropic scatterers (e.g. white-noise disorder[3] or phonons[4-8]) is independent of carrier density n. Here we show that acoustic phonon scattering[4-6] is indeed independent of n, and places an intrinsic limit on the resistivity in graphene of only 30 Ohm at room temperature (RT). At a technologically-relevant carrier density of 10^12 cm^-2, the mean free path for electron-acoustic phonon scattering is >2 microns, and the intrinsic mobility limit is 2x10^5 cm^2/Vs, exceeding the highest known inorganic semiconductor (InSb, ~7.7x10^4 cm^2/Vs[9]) and semiconducting carbon nanotubes (~1x10^5 cm^2/Vs[10]). We also show that extrinsic scattering by surface phonons of the SiO2 substrate[11,12] adds a strong temperature dependent resistivity above ~200 K[8], limiting the RT mobility to ~4x10^4 cm^2/Vs, pointing out the importance of substrate choice for graphene devices[13].Comment: 16 pages, 3 figure