Characterization of SiGe/Si Heterostructures Formed by Ge+ and C+ Implantation

Formation of SiGe/Si heterostructures by germanium ion implantation was investigated. A germanium‐implanted layer was grown epitaxially in the solid phase by thermal annealing. Two kinds of crystalline defects were observed. One is a misfit dislocation, and the other is a residual dislocation caused by ion bombardment. The p‐n junction formed in the SiGe layer has a leakage current three orders of magnitude larger than that of a pure Si p‐n junction fabricated with an identical process except for the Ge+ implantation. Carbon doping in the SiGe layer improves its crystalline quality and the junction characteristics

Improved Crystalline Quality of Si\u3csub\u3e1-x\u3c/sub\u3eGe\u3csub\u3ex\u3c/sub\u3e Formed by Low-temperature Germanium Ion Implantation

Improvement of crystalline quality in Si1-xGex formed by germanium ion implantation has been found. End‐of‐range defects were drastically reduced in number by lowering the substrate temperature during implantation with doses on the order of 1016 cm−2. This improvement was confirmed by electrical characterization of p‐n junctions formed in the SiGe layer as well as by transmission electron microscopy