30 research outputs found
Electric field penetration in Au/Nb:SrTiO3 Schottky junctions probed by bias-dependent internal photoemission
Dielectric constants of Ir, Ru, Pt, and IrO2: Contributions from bound charges
We investigated the dielectric functions () of Ir, Ru, Pt,
and IrO, which are commonly used as electrodes in ferroelectric thin film
applications. In particular, we investigated the contributions from bound
charges (), since these are important scientifically as
well as technologically: the (0) of a metal electrode is one of
the major factors determining the depolarization field inside a ferroelectric
capacitor. To obtain (0), we measured reflectivity spectra of
sputtered Pt, Ir, Ru, and IrO2 films in a wide photon energy range between 3.7
meV and 20 eV. We used a Kramers-Kronig transformation to obtain real and
imaginary dielectric functions, and then used Drude-Lorentz oscillator fittings
to extract (0) values. Ir, Ru, Pt, and IrO produced
experimental (0) values of 4810, 8210, 5810, and
295, respectively, which are in good agreement with values obtained using
first-principles calculations. These values are much higher than those for
noble metals such as Cu, Ag, and Au because transition metals and IrO have
such strong d-d transitions below 2.0 eV. High (0) values will
reduce the depolarization field in ferroelectric capacitors, making these
materials good candidates for use as electrodes in ferroelectric applications.Comment: 26 pages, 6 figures, 2 table
Quantum interference structures in the conductance plateaus of gold nanojunctions
The conductance of breaking metallic nanojunctions shows plateaus alternated
with sudden jumps, corresponding to the stretching of stable atomic
configurations and atomic rearrangements, respectively. We investigate the
structure of the conductance plateaus both by measuring the voltage dependence
of the plateaus' slope on individual junctions and by a detailed statistical
analysis on a large amount of contacts. Though the atomic discreteness of the
junction plays a fundamental role in the evolution of the conductance, we find
that the fine structure of the conductance plateaus is determined by quantum
interference phenomenon to a great extent.Comment: 4 pages, 4 figure
Connective neck evolution and conductance steps in hot point contacts
Dynamic evolution of the connective neck in Al and Pb mechanically
controllable break junctions was studied during continuous approach of
electrodes at bias voltages V_b up to a few hundred mV. A high level of power
dissipation (10^-4 - 10^-3 W) and high current density (j > 10^10 A/cm^2) in
the constriction lead to overheating of the contact area, electromigration and
current-enhanced diffusion of atoms out of the "hot spot". At a low electrode
approach rate (10 - 50 pm/s) the transverse dimension of the neck and the
conductance of the junction depend on V_b and remain nearly constant over the
approach distance of 10 - 30 nm. For V_b > 300 mV the connective neck consists
of a few atoms only and the quantum nature of conductance manifests itself in
abrupt steps and reversible jumps between two or more levels. These features
are related to an ever changing number of individual conductance channels due
to the continuous rearrangement in atomic configuration of the neck, the
recurring motion of atoms between metastable states, the formation and breaking
of isolated one-atom contacts and the switching between energetically
preferable neck geometries.Comment: 21 pages 10 figure