Dielectric constants of Ir, Ru, Pt, and IrO2: Contributions from bound charges

We investigated the dielectric functions $\epsilon$($\omega$) of Ir, Ru, Pt, and IrO$_2$, which are commonly used as electrodes in ferroelectric thin film applications. In particular, we investigated the contributions from bound charges $\epsilon^{b}$($\omega$), since these are important scientifically as well as technologically: the $\epsilon_1^{b}$(0) of a metal electrode is one of the major factors determining the depolarization field inside a ferroelectric capacitor. To obtain $\epsilon_1^{b}$(0), we measured reflectivity spectra of sputtered Pt, Ir, Ru, and IrO2 films in a wide photon energy range between 3.7 meV and 20 eV. We used a Kramers-Kronig transformation to obtain real and imaginary dielectric functions, and then used Drude-Lorentz oscillator fittings to extract $\epsilon_1^{b}$(0) values. Ir, Ru, Pt, and IrO$_2$ produced experimental $\epsilon_1^{b}$(0) values of 48$\pm$10, 82$\pm$10, 58$\pm$10, and 29$\pm$5, respectively, which are in good agreement with values obtained using first-principles calculations. These values are much higher than those for noble metals such as Cu, Ag, and Au because transition metals and IrO$_2$ have such strong d-d transitions below 2.0 eV. High $\epsilon_1^{b}$(0) values will reduce the depolarization field in ferroelectric capacitors, making these materials good candidates for use as electrodes in ferroelectric applications.Comment: 26 pages, 6 figures, 2 table

Quantum interference structures in the conductance plateaus of gold nanojunctions

The conductance of breaking metallic nanojunctions shows plateaus alternated with sudden jumps, corresponding to the stretching of stable atomic configurations and atomic rearrangements, respectively. We investigate the structure of the conductance plateaus both by measuring the voltage dependence of the plateaus' slope on individual junctions and by a detailed statistical analysis on a large amount of contacts. Though the atomic discreteness of the junction plays a fundamental role in the evolution of the conductance, we find that the fine structure of the conductance plateaus is determined by quantum interference phenomenon to a great extent.Comment: 4 pages, 4 figure

Connective neck evolution and conductance steps in hot point contacts

Dynamic evolution of the connective neck in Al and Pb mechanically controllable break junctions was studied during continuous approach of electrodes at bias voltages V_b up to a few hundred mV. A high level of power dissipation (10^-4 - 10^-3 W) and high current density (j > 10^10 A/cm^2) in the constriction lead to overheating of the contact area, electromigration and current-enhanced diffusion of atoms out of the "hot spot". At a low electrode approach rate (10 - 50 pm/s) the transverse dimension of the neck and the conductance of the junction depend on V_b and remain nearly constant over the approach distance of 10 - 30 nm. For V_b > 300 mV the connective neck consists of a few atoms only and the quantum nature of conductance manifests itself in abrupt steps and reversible jumps between two or more levels. These features are related to an ever changing number of individual conductance channels due to the continuous rearrangement in atomic configuration of the neck, the recurring motion of atoms between metastable states, the formation and breaking of isolated one-atom contacts and the switching between energetically preferable neck geometries.Comment: 21 pages 10 figure