13 research outputs found
Thermodynamic Oxidation and Reduction Potentials of Photocatalytic Semiconductors in Aqueous Solution
An approach is introduced to calculate the thermodynamic
oxidation
and reduction potentials of semiconductors in aqueous solution. By
combining a newly developed ab initio calculation method for compound
formation energy and band alignment with electrochemistry experimental
data, this approach can be used to predict the stability of almost
any compound semiconductor in aqueous solution. Thirty photocatalytic
semiconductors have been studied, and a graph (a simplified Pourbaix
diagram) showing their valence/conduction band edges and oxidation/reduction
potentials relative to the water redox potentials is produced. On
the basis of this graph, the thermodynamic stabilities and trends
against the oxidative and reductive photocorrosion for compound semiconductors
are analyzed, which shows the following: (i) some metal oxides can
be resistant against the oxidation by the photogenerated holes when
used as the n-type photoanodes; (ii) all the nonoxide semiconductors
are susceptible to oxidation, but they are resistant to the reduction
by the photogenerated electrons and thus can be used as the p-type
photocathodes if protected from the oxidation; (iii) doping or alloying
the metal oxide with less electronegative anions can decrease the
band gap but also degrade the stability against oxidation
Influence of Defects and Synthesis Conditions on the Photovoltaic Performance of Perovskite Semiconductor CsSnI<sub>3</sub>
CsSnI<sub>3</sub> is a prototype
inorganic halide perovskite that
has recently been proposed as a strong candidate for photovoltaic
applications because of its unique semiconductor properties. Through
first-principle calculations, we show that the concentration control
of intrinsic defects is critical for optimizing the photovoltaic properties
of CsSnI<sub>3</sub>. Under a Sn-poor condition, a high concentration
of acceptor defects, such as Sn or Cs vacancies, can form easily and
produce a high p-type conductivity and deep-level defects that can
become electronāhole recombination centers, all with high energy.
This condition is optimal for growing CsSnI<sub>3</sub> as hole-transport
material in solar cells. In contrast, when Sn becomes richer, the
concentration of acceptor defects decreases; therefore, the p-type
conductivity may drop to a moderate level, which can increase the
shunt resistance and, thus, the efficiency of the solar cells with
CsSnI<sub>3</sub> as the light absorber material (LAM). However, under
the Sn-rich condition, the concentration of a deep-level donor defect
Sn<sub>I</sub> will increase, causing electron traping and non-radiative
electronāhole recombination. Therefore, we propose that a moderately
Sn-rich condition is optimal when CsSnI<sub>3</sub> is used as the
LAM. The defect properties of CsSnI<sub>3</sub> are general, and the
underlying chemistry is expected to be applicable to other halide
perovskite semiconductors
Indolo[3,2,1-jk]carbazole Derivatives-Sensitized Solar Cells: Effect of ĻāBridges on the Performance of Cells
Four organic dyes
based on indoloĀ[3,2,1-jk]Ācarbazole (IC-1, IC-2,
IC-3, and IC-4) with different Ļ-bridges (benzene ring and thiophene
ring) are used for dye-sensitized solar cells (DSSCs) to investigate
the effect of Ļ-bridge on their photovoltaic performance. The
introduction of thiophene ring as Ļ-bridge (the dye IC-2) greatly
improves the cell performance compared to benzene ring. The increasing
conjugation length of the molecules decreases the performance of DSSCs.
The best performance of DSSC based on IC-2 is obtained with a <i>V</i><sub>oc</sub> of 0.66 V and a conversion efficiency of
3.68%. The poor performance of DSSCs based on IC-1 and IC-3 which
contains only benzene ring as the Ļ-bridge can be attributed
to poor spectral coverage and higher electron charge transfer resistance
as evaluated from EIS studies
Improved Carrier Lifetimes of CdSe Thin Film via Te Doping for Photovoltaic Application
Cadmium
selenide (CdSe) solar cells have proven to be
a remarkable
potential top cell for a silicon-based tandem application. However,
the defects and short carrier lifetimes of CdSe thin films greatly
limit the solar cell performance. In this work, a Te-doped strategy
is proposed to passivate the Se vacancy defects and increase the carrier
lifetime of the CdSe thin film. The theoretical calculation helps
to reveal the mechanism of nonradiative recombination of the CdSe
thin film in depth. After Te-doping, the calculated capture coefficient
of CdSe can be reduced from 4.61 Ć 10ā8 cm3 sā1 to 2.32 Ć 10ā9 cm3 sā1. Meanwhile, the carrier lifetime
of CdSe thin film is increased nearly 3-fold from 0.53 to 1.43 ns.
Finally, the efficiency of the Cd(Se,Te) solar cell is improved to
4.11%, about a relative 36.5% improvement compared to the pure CdSe
solar cell. Both theoretical calculations and experiments prove that
Te can effectively passivate bulk defects and improve the carrier
lifetime of CdSe thin films, deserving further exploration to improve
solar cell performance
CuSbS<sub>2</sub> as a Promising Earth-Abundant Photovoltaic Absorber Material: A Combined Theoretical and Experimental Study
Recently,
CuSbS<sub>2</sub> has been proposed as an alternative
earth-abundant absorber material for thin film solar cells. However,
no systematic study on the chemical, optical, and electrical properties
of CuSbS<sub>2</sub> has been reported. Using density functional theory
(DFT) calculations, we showed that CuSbS<sub>2</sub> has superior
defect physics with extremely low concentration of recombination-center
defects within the forbidden gap, espeically under the S rich condition.
It has intrinsically p-type conductivity, which is determined by the
dominant Cu vacancy (<i>V</i><sub>Cu</sub>) defects with
the a shallow ionization level and the lowest formation energy. Using
a hydrazine based solution process, phase-pure, highly crystalline
CuSbS<sub>2</sub> film with large grain size was successfully obtained.
Optical absorption investigation revealed that our CuSbS<sub>2</sub> has a direct band gap of 1.4 eV. Ultraviolet photoelectron spectroscopy
(UPS) study showed that the conduction band and valence band are located
at 3.85 eV and ā5.25 eV relative to the vacuum level, respectively.
As the calculations predicted, a p-type conductivity is observed in
the Hall effect measurements with a hole concentration of ā¼10<sup>18</sup> cm<sup>ā3</sup> and hole mobility of 49 cm<sup>2</sup>/(V s). Finally, we have built a prototype FTO/CuSbS<sub>2</sub>/CdS/ZnO/ZnO:Al/Au
solar cell and achieved 0.50% solar conversion efficiency. Our theoretical
and experimental investigation confirmed that CuSbS<sub>2</sub> is
indeed a very promising absorber material for solar cell application
Composition- and Band-Gap-Tunable Synthesis of Wurtzite-Derived Cu<sub>2</sub>ZnSn(S<sub>1ā<i>x</i></sub>Se<sub><i>x</i></sub>)<sub>4</sub> Nanocrystals: Theoretical and Experimental Insights
The wurtzite-derived Cu<sub>2</sub>ZnSn(S<sub>1ā<i>x</i></sub>Se<sub><i>x</i></sub>)<sub>4</sub> alloys are studied for the first time through combining theoretical calculations and experimental characterizations. <i>Ab initio</i> calculations predict that wurtzite-derived Cu<sub>2</sub>ZnSnS<sub>4</sub> and Cu<sub>2</sub>ZnSnSe<sub>4</sub> are highly miscible, and the band gaps of the mixed-anion alloys can be linearly tuned from 1.0 to 1.5 eV through changing the composition parameter <i>x</i> from 0 to 1. A synthetic procedure for the wurtzite-derived Cu<sub>2</sub>ZnSn(S<sub>1ā<i>x</i></sub>Se<sub><i>x</i></sub>)<sub>4</sub> alloy nanocrystals with tunable compositions has been developed. A linear tunable band-gap range of 0.5 eV is observed in the synthesized alloy nanocrystals, which shows good agreement with the <i>ab initio</i> calculations
Deciphering Halogen Competition in Organometallic Halide Perovskite Growth
Organometallic
halide perovskites (OHPs) hold great promise for
next-generation, low-cost optoelectronic devices. During the chemical
synthesis and crystallization of OHP thin films, a major unresolved
question is the competition between multiple halide species (e.g.,
I<sup>ā</sup>, Cl<sup>ā</sup>, Br<sup>ā</sup>) in the formation of the mixed-halide perovskite crystals. Whether
Cl<sup>ā</sup> ions are successfully incorporated into the
perovskite crystal structure or, alternatively, where they are located
is not yet fully understood. Here, in situ X-ray diffraction measurements
of crystallization dynamics are combined with ex situ TOF-SIMS chemical
analysis to reveal that Br<sup>ā</sup> or Cl<sup>ā</sup> ions can promote crystal growth, yet reactive I<sup>ā</sup> ions prevent them from incorporating into the lattice of the final
perovskite crystal structure. The Cl<sup>ā</sup> ions are located
in the grain boundaries of the perovskite films. These findings significantly
advance our understanding of the role of halogens during synthesis
of hybrid perovskites and provide an insightful guidance to the engineering
of high-quality perovskite films, essential for exploring superior-performing
and cost-effective optoelectronic devices
A One-Dimensional Organic Lead Chloride Hybrid with Excitation-Dependent Broadband Emissions
Organicāinorganic
metal halide hybrids have emerged as a
new class of materials with fascinating optical and electronic properties.
The exceptional structure tunability has enabled the development of
materials with various dimensionalities at the molecular level, from
three-dimensional (3D) to 2D, 1D, and 0D. Here, we report a new 1D
lead chloride hybrid, C<sub>4</sub>N<sub>2</sub>H<sub>14</sub>PbCl<sub>4</sub>, which exhibits unusual inverse excitation-dependent broadband
emission from bluish-green to yellow. Density functional theory calculations
were performed to better understand the mechanism of this excitation-dependent
broadband emission. This 1D hybrid material is found to have two emission
centers, corresponding to the self-trapped excitons (STEs) and vacancy-bound
excitons. The excitation-dependent emission is due to different populations
of these two types of excitons generated at different excitation wavelengths.
This work shows the rich chemistry and physics of organicāinorganic
metal halide hybrids and paves the way to achieving novel light emitters
with excitation-dependent broadband emissions at room temperature
A One-Dimensional Organic Lead Chloride Hybrid with Excitation-Dependent Broadband Emissions
Organicāinorganic
metal halide hybrids have emerged as a
new class of materials with fascinating optical and electronic properties.
The exceptional structure tunability has enabled the development of
materials with various dimensionalities at the molecular level, from
three-dimensional (3D) to 2D, 1D, and 0D. Here, we report a new 1D
lead chloride hybrid, C<sub>4</sub>N<sub>2</sub>H<sub>14</sub>PbCl<sub>4</sub>, which exhibits unusual inverse excitation-dependent broadband
emission from bluish-green to yellow. Density functional theory calculations
were performed to better understand the mechanism of this excitation-dependent
broadband emission. This 1D hybrid material is found to have two emission
centers, corresponding to the self-trapped excitons (STEs) and vacancy-bound
excitons. The excitation-dependent emission is due to different populations
of these two types of excitons generated at different excitation wavelengths.
This work shows the rich chemistry and physics of organicāinorganic
metal halide hybrids and paves the way to achieving novel light emitters
with excitation-dependent broadband emissions at room temperature
Pt-Mediated Reversible Reduction and Expansion of CeO<sub>2</sub> in Pt Nanoparticle/Mesoporous CeO<sub>2</sub> Catalyst: In Situ Xāray Spectroscopy and Diffraction Studies under Redox (H<sub>2</sub> and O<sub>2</sub>) Atmospheres
Here,
we report the Pt nanoparticle mediated reduction (oxidation)
and lattice expansion (contraction) of mesoporous CeO<sub>2</sub> under
H<sub>2</sub> (O<sub>2</sub>) atmospheres and in the temperature range
of 50ā350 Ā°C. We found that CeO<sub>2</sub> in the Pt/CeO<sub>2</sub> catalyst was partially reduced in H<sub>2</sub> (and fully
oxidized back in O<sub>2</sub>) as demonstrated by several in situ
techniques: APXPS spectra (4d core levels) for the topmost surface,
NEXAFS total electron yield spectra (at the M<sub>5,4</sub> edges)
in the near surface regions, and (N)ĀEXAFS fluorescence spectra (at
the L<sub>3</sub> edge) in the bulk. Moreover, XRD and EXAFS showed
the reversible expansion and contraction of the CeO<sub>2</sub> unit
cell in H<sub>2</sub> and O<sub>2</sub> environments, respectively.
The expansion of the CeO<sub>2</sub> cell was mainly associated with
the formation of oxygen vacancies as a result of the Pt-mediated reduction
of Ce<sup>4+</sup> to Ce<sup>3+</sup>. We also found that pure mesoporous
CeO<sub>2</sub> can not be reduced in H<sub>2</sub> under identical
conditions but can be partially reduced at above 450 Ā°C as revealed
by APXPS. The role of Pt in H<sub>2</sub> was identified as a catalytic
one that reduces the activation barrier for the reduction of CeO<sub>2</sub> via hydrogen spillover