13 research outputs found

    Thermodynamic Oxidation and Reduction Potentials of Photocatalytic Semiconductors in Aqueous Solution

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    An approach is introduced to calculate the thermodynamic oxidation and reduction potentials of semiconductors in aqueous solution. By combining a newly developed ab initio calculation method for compound formation energy and band alignment with electrochemistry experimental data, this approach can be used to predict the stability of almost any compound semiconductor in aqueous solution. Thirty photocatalytic semiconductors have been studied, and a graph (a simplified Pourbaix diagram) showing their valence/conduction band edges and oxidation/reduction potentials relative to the water redox potentials is produced. On the basis of this graph, the thermodynamic stabilities and trends against the oxidative and reductive photocorrosion for compound semiconductors are analyzed, which shows the following: (i) some metal oxides can be resistant against the oxidation by the photogenerated holes when used as the n-type photoanodes; (ii) all the nonoxide semiconductors are susceptible to oxidation, but they are resistant to the reduction by the photogenerated electrons and thus can be used as the p-type photocathodes if protected from the oxidation; (iii) doping or alloying the metal oxide with less electronegative anions can decrease the band gap but also degrade the stability against oxidation

    Influence of Defects and Synthesis Conditions on the Photovoltaic Performance of Perovskite Semiconductor CsSnI<sub>3</sub>

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    CsSnI<sub>3</sub> is a prototype inorganic halide perovskite that has recently been proposed as a strong candidate for photovoltaic applications because of its unique semiconductor properties. Through first-principle calculations, we show that the concentration control of intrinsic defects is critical for optimizing the photovoltaic properties of CsSnI<sub>3</sub>. Under a Sn-poor condition, a high concentration of acceptor defects, such as Sn or Cs vacancies, can form easily and produce a high p-type conductivity and deep-level defects that can become electronā€“hole recombination centers, all with high energy. This condition is optimal for growing CsSnI<sub>3</sub> as hole-transport material in solar cells. In contrast, when Sn becomes richer, the concentration of acceptor defects decreases; therefore, the p-type conductivity may drop to a moderate level, which can increase the shunt resistance and, thus, the efficiency of the solar cells with CsSnI<sub>3</sub> as the light absorber material (LAM). However, under the Sn-rich condition, the concentration of a deep-level donor defect Sn<sub>I</sub> will increase, causing electron traping and non-radiative electronā€“hole recombination. Therefore, we propose that a moderately Sn-rich condition is optimal when CsSnI<sub>3</sub> is used as the LAM. The defect properties of CsSnI<sub>3</sub> are general, and the underlying chemistry is expected to be applicable to other halide perovskite semiconductors

    Indolo[3,2,1-jk]carbazole Derivatives-Sensitized Solar Cells: Effect of Ļ€ā€‘Bridges on the Performance of Cells

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    Four organic dyes based on indoloĀ­[3,2,1-jk]Ā­carbazole (IC-1, IC-2, IC-3, and IC-4) with different Ļ€-bridges (benzene ring and thiophene ring) are used for dye-sensitized solar cells (DSSCs) to investigate the effect of Ļ€-bridge on their photovoltaic performance. The introduction of thiophene ring as Ļ€-bridge (the dye IC-2) greatly improves the cell performance compared to benzene ring. The increasing conjugation length of the molecules decreases the performance of DSSCs. The best performance of DSSC based on IC-2 is obtained with a <i>V</i><sub>oc</sub> of 0.66 V and a conversion efficiency of 3.68%. The poor performance of DSSCs based on IC-1 and IC-3 which contains only benzene ring as the Ļ€-bridge can be attributed to poor spectral coverage and higher electron charge transfer resistance as evaluated from EIS studies

    Improved Carrier Lifetimes of CdSe Thin Film via Te Doping for Photovoltaic Application

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    Cadmium selenide (CdSe) solar cells have proven to be a remarkable potential top cell for a silicon-based tandem application. However, the defects and short carrier lifetimes of CdSe thin films greatly limit the solar cell performance. In this work, a Te-doped strategy is proposed to passivate the Se vacancy defects and increase the carrier lifetime of the CdSe thin film. The theoretical calculation helps to reveal the mechanism of nonradiative recombination of the CdSe thin film in depth. After Te-doping, the calculated capture coefficient of CdSe can be reduced from 4.61 Ɨ 10ā€“8 cm3 sā€“1 to 2.32 Ɨ 10ā€“9 cm3 sā€“1. Meanwhile, the carrier lifetime of CdSe thin film is increased nearly 3-fold from 0.53 to 1.43 ns. Finally, the efficiency of the Cd(Se,Te) solar cell is improved to 4.11%, about a relative 36.5% improvement compared to the pure CdSe solar cell. Both theoretical calculations and experiments prove that Te can effectively passivate bulk defects and improve the carrier lifetime of CdSe thin films, deserving further exploration to improve solar cell performance

    CuSbS<sub>2</sub> as a Promising Earth-Abundant Photovoltaic Absorber Material: A Combined Theoretical and Experimental Study

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    Recently, CuSbS<sub>2</sub> has been proposed as an alternative earth-abundant absorber material for thin film solar cells. However, no systematic study on the chemical, optical, and electrical properties of CuSbS<sub>2</sub> has been reported. Using density functional theory (DFT) calculations, we showed that CuSbS<sub>2</sub> has superior defect physics with extremely low concentration of recombination-center defects within the forbidden gap, espeically under the S rich condition. It has intrinsically p-type conductivity, which is determined by the dominant Cu vacancy (<i>V</i><sub>Cu</sub>) defects with the a shallow ionization level and the lowest formation energy. Using a hydrazine based solution process, phase-pure, highly crystalline CuSbS<sub>2</sub> film with large grain size was successfully obtained. Optical absorption investigation revealed that our CuSbS<sub>2</sub> has a direct band gap of 1.4 eV. Ultraviolet photoelectron spectroscopy (UPS) study showed that the conduction band and valence band are located at 3.85 eV and āˆ’5.25 eV relative to the vacuum level, respectively. As the calculations predicted, a p-type conductivity is observed in the Hall effect measurements with a hole concentration of āˆ¼10<sup>18</sup> cm<sup>ā€“3</sup> and hole mobility of 49 cm<sup>2</sup>/(V s). Finally, we have built a prototype FTO/CuSbS<sub>2</sub>/CdS/ZnO/ZnO:Al/Au solar cell and achieved 0.50% solar conversion efficiency. Our theoretical and experimental investigation confirmed that CuSbS<sub>2</sub> is indeed a very promising absorber material for solar cell application

    Composition- and Band-Gap-Tunable Synthesis of Wurtzite-Derived Cu<sub>2</sub>ZnSn(S<sub>1ā€“<i>x</i></sub>Se<sub><i>x</i></sub>)<sub>4</sub> Nanocrystals: Theoretical and Experimental Insights

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    The wurtzite-derived Cu<sub>2</sub>ZnSn(S<sub>1ā€“<i>x</i></sub>Se<sub><i>x</i></sub>)<sub>4</sub> alloys are studied for the first time through combining theoretical calculations and experimental characterizations. <i>Ab initio</i> calculations predict that wurtzite-derived Cu<sub>2</sub>ZnSnS<sub>4</sub> and Cu<sub>2</sub>ZnSnSe<sub>4</sub> are highly miscible, and the band gaps of the mixed-anion alloys can be linearly tuned from 1.0 to 1.5 eV through changing the composition parameter <i>x</i> from 0 to 1. A synthetic procedure for the wurtzite-derived Cu<sub>2</sub>ZnSn(S<sub>1ā€“<i>x</i></sub>Se<sub><i>x</i></sub>)<sub>4</sub> alloy nanocrystals with tunable compositions has been developed. A linear tunable band-gap range of 0.5 eV is observed in the synthesized alloy nanocrystals, which shows good agreement with the <i>ab initio</i> calculations

    Deciphering Halogen Competition in Organometallic Halide Perovskite Growth

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    Organometallic halide perovskites (OHPs) hold great promise for next-generation, low-cost optoelectronic devices. During the chemical synthesis and crystallization of OHP thin films, a major unresolved question is the competition between multiple halide species (e.g., I<sup>ā€“</sup>, Cl<sup>ā€“</sup>, Br<sup>ā€“</sup>) in the formation of the mixed-halide perovskite crystals. Whether Cl<sup>ā€“</sup> ions are successfully incorporated into the perovskite crystal structure or, alternatively, where they are located is not yet fully understood. Here, in situ X-ray diffraction measurements of crystallization dynamics are combined with ex situ TOF-SIMS chemical analysis to reveal that Br<sup>ā€“</sup> or Cl<sup>ā€“</sup> ions can promote crystal growth, yet reactive I<sup>ā€“</sup> ions prevent them from incorporating into the lattice of the final perovskite crystal structure. The Cl<sup>ā€“</sup> ions are located in the grain boundaries of the perovskite films. These findings significantly advance our understanding of the role of halogens during synthesis of hybrid perovskites and provide an insightful guidance to the engineering of high-quality perovskite films, essential for exploring superior-performing and cost-effective optoelectronic devices

    A One-Dimensional Organic Lead Chloride Hybrid with Excitation-Dependent Broadband Emissions

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    Organicā€“inorganic metal halide hybrids have emerged as a new class of materials with fascinating optical and electronic properties. The exceptional structure tunability has enabled the development of materials with various dimensionalities at the molecular level, from three-dimensional (3D) to 2D, 1D, and 0D. Here, we report a new 1D lead chloride hybrid, C<sub>4</sub>N<sub>2</sub>H<sub>14</sub>PbCl<sub>4</sub>, which exhibits unusual inverse excitation-dependent broadband emission from bluish-green to yellow. Density functional theory calculations were performed to better understand the mechanism of this excitation-dependent broadband emission. This 1D hybrid material is found to have two emission centers, corresponding to the self-trapped excitons (STEs) and vacancy-bound excitons. The excitation-dependent emission is due to different populations of these two types of excitons generated at different excitation wavelengths. This work shows the rich chemistry and physics of organicā€“inorganic metal halide hybrids and paves the way to achieving novel light emitters with excitation-dependent broadband emissions at room temperature

    A One-Dimensional Organic Lead Chloride Hybrid with Excitation-Dependent Broadband Emissions

    No full text
    Organicā€“inorganic metal halide hybrids have emerged as a new class of materials with fascinating optical and electronic properties. The exceptional structure tunability has enabled the development of materials with various dimensionalities at the molecular level, from three-dimensional (3D) to 2D, 1D, and 0D. Here, we report a new 1D lead chloride hybrid, C<sub>4</sub>N<sub>2</sub>H<sub>14</sub>PbCl<sub>4</sub>, which exhibits unusual inverse excitation-dependent broadband emission from bluish-green to yellow. Density functional theory calculations were performed to better understand the mechanism of this excitation-dependent broadband emission. This 1D hybrid material is found to have two emission centers, corresponding to the self-trapped excitons (STEs) and vacancy-bound excitons. The excitation-dependent emission is due to different populations of these two types of excitons generated at different excitation wavelengths. This work shows the rich chemistry and physics of organicā€“inorganic metal halide hybrids and paves the way to achieving novel light emitters with excitation-dependent broadband emissions at room temperature

    Pt-Mediated Reversible Reduction and Expansion of CeO<sub>2</sub> in Pt Nanoparticle/Mesoporous CeO<sub>2</sub> Catalyst: In Situ Xā€‘ray Spectroscopy and Diffraction Studies under Redox (H<sub>2</sub> and O<sub>2</sub>) Atmospheres

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    Here, we report the Pt nanoparticle mediated reduction (oxidation) and lattice expansion (contraction) of mesoporous CeO<sub>2</sub> under H<sub>2</sub> (O<sub>2</sub>) atmospheres and in the temperature range of 50ā€“350 Ā°C. We found that CeO<sub>2</sub> in the Pt/CeO<sub>2</sub> catalyst was partially reduced in H<sub>2</sub> (and fully oxidized back in O<sub>2</sub>) as demonstrated by several in situ techniques: APXPS spectra (4d core levels) for the topmost surface, NEXAFS total electron yield spectra (at the M<sub>5,4</sub> edges) in the near surface regions, and (N)Ā­EXAFS fluorescence spectra (at the L<sub>3</sub> edge) in the bulk. Moreover, XRD and EXAFS showed the reversible expansion and contraction of the CeO<sub>2</sub> unit cell in H<sub>2</sub> and O<sub>2</sub> environments, respectively. The expansion of the CeO<sub>2</sub> cell was mainly associated with the formation of oxygen vacancies as a result of the Pt-mediated reduction of Ce<sup>4+</sup> to Ce<sup>3+</sup>. We also found that pure mesoporous CeO<sub>2</sub> can not be reduced in H<sub>2</sub> under identical conditions but can be partially reduced at above 450 Ā°C as revealed by APXPS. The role of Pt in H<sub>2</sub> was identified as a catalytic one that reduces the activation barrier for the reduction of CeO<sub>2</sub> via hydrogen spillover
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