Low-Voltage Control of (Co/Pt)_<i>x</i> Perpendicular Magnetic Anisotropy Heterostructure for Flexible Spintronics

The trend of mobile Internet requires portable and wearable devices as bio-device interfaces. Electric field control of magnetism is a promising approach to achieve compact, light-weight, and energy-efficient wearable devices. Within a flexible sandwich heterostructure, perpendicular magnetic anisotropy switching was achieved <i>via</i> low-voltage gating control of an ionic gel in mica/Ta/(Pt/Co)_<i>x</i>/Pt/ionic gel/Pt, where (Pt/Co)_<i>x</i> acted as a functional layer. By conducting <i>in situ</i> VSM, EPR, and MOKE measurements, a 1098 Oe magnetic anisotropy field change was determined at the bending state with tensile strain, corresponding to a magnetic anisotropy energy change of 3.16 × 10⁵ J/m³ and a giant voltage tunability coefficient of 0.79 × 10⁵ J/m³·V. The low voltage and strain dual control of magnetism on mica substrates enables tunable flexible spintronic devices with an increased degree of manipulation

Low-Voltage Control of (Co/Pt)_<i>x</i> Perpendicular Magnetic Anisotropy Heterostructure for Flexible Spintronics

The trend of mobile Internet requires portable and wearable devices as bio-device interfaces. Electric field control of magnetism is a promising approach to achieve compact, light-weight, and energy-efficient wearable devices. Within a flexible sandwich heterostructure, perpendicular magnetic anisotropy switching was achieved <i>via</i> low-voltage gating control of an ionic gel in mica/Ta/(Pt/Co)_<i>x</i>/Pt/ionic gel/Pt, where (Pt/Co)_<i>x</i> acted as a functional layer. By conducting <i>in situ</i> VSM, EPR, and MOKE measurements, a 1098 Oe magnetic anisotropy field change was determined at the bending state with tensile strain, corresponding to a magnetic anisotropy energy change of 3.16 × 10⁵ J/m³ and a giant voltage tunability coefficient of 0.79 × 10⁵ J/m³·V. The low voltage and strain dual control of magnetism on mica substrates enables tunable flexible spintronic devices with an increased degree of manipulation

Low-Voltage Control of (Co/Pt)_<i>x</i> Perpendicular Magnetic Anisotropy Heterostructure for Flexible Spintronics

The trend of mobile Internet requires portable and wearable devices as bio-device interfaces. Electric field control of magnetism is a promising approach to achieve compact, light-weight, and energy-efficient wearable devices. Within a flexible sandwich heterostructure, perpendicular magnetic anisotropy switching was achieved <i>via</i> low-voltage gating control of an ionic gel in mica/Ta/(Pt/Co)_<i>x</i>/Pt/ionic gel/Pt, where (Pt/Co)_<i>x</i> acted as a functional layer. By conducting <i>in situ</i> VSM, EPR, and MOKE measurements, a 1098 Oe magnetic anisotropy field change was determined at the bending state with tensile strain, corresponding to a magnetic anisotropy energy change of 3.16 × 10⁵ J/m³ and a giant voltage tunability coefficient of 0.79 × 10⁵ J/m³·V. The low voltage and strain dual control of magnetism on mica substrates enables tunable flexible spintronic devices with an increased degree of manipulation

Ferroelectric Phase Transition Induced a Large FMR Tuning in Self-Assembled BaTiO₃:Y₃Fe₅O₁₂ Multiferroic Composites

Yttrium iron garnet (YIG) is of great importance in RF/microwave devices for its low loss, low intrinsic damping, and high permeability. Nevertheless, tuning of YIG-based multiferroics is still a challenge due to its near-zero magnetostriction and the difficulty of building epitaxial interface between ferromagnetic garnet and ferroelectric perovskite phases. In this work, the vertically aligned heterostructure of YIG:BTO/STO(001) with local epitaxial interface between BTO and YIG is well-constructed, where the single crystal BTO pillars are embedded in YIG matrix. A large magnetoelectric coupling effect that drives YIG’s FMR shift up to 512 and 333 Oe (1–2 order greater than those of all state-of-the-art progresses) is obtained through BTO ferroelectric phase changes induced by temperature variation at 295 and 193 K, correspondingly. This record high magnetoelectric tunability of YIG paves a way toward thermal/electrical tunable YIG devices

Discovery of Enhanced Magnetoelectric Coupling through Electric Field Control of Two-Magnon Scattering within Distorted Nanostructures

Electric field control of dynamic spin interactions is promising to break through the limitation of the magnetostatic interaction based magnetoelectric (ME) effect. In this work, electric field control of the two-magnon scattering (TMS) effect excited by in-plane lattice rotation has been demonstrated in a La_0.7Sr_0.3MnO₃ (LSMO)/Pb­(Mn_2/3Nb_1/3)-PbTiO₃ (PMN-PT) (011) multiferroic heterostructure. Compared with the conventional strain-mediated ME effect, a giant enhancement of ME effect up to 950% at the TMS critical angle is precisely determined by angular resolution of the ferromagnetic resonance (FMR) measurement. Particularly, a large electric field modulation of magnetic anisotropy (464 Oe) and FMR line width (401 Oe) is achieved at 173 K. The electric-field-controllable TMS effect and its correlated ME effect have been explained by electric field modulation of the planar spin interactions triggered by spin–lattice coupling. The enhancement of the ME effect at various temperatures and spin dynamics control are promising paradigms for next-generation voltage-tunable spintronic devices