Reversible Electric-Field-Driven Magnetic Domain-Wall Motion

Control of magnetic domain-wall motion by electric fields has recently attracted scientific attention because of its potential for magnetic logic and memory devices. Here, we report on a new driving mechanism that allows for magnetic domain-wall motion in an applied electric field without the concurrent use of a magnetic field or spin-polarized electric current. The mechanism is based on elastic coupling between magnetic and ferroelectric domain walls in multiferroic heterostructures. Pure electric-field-driven magnetic domain-wall motion is demonstrated for epitaxial Fe films on BaTiO3 with in-plane and out-of-plane polarized domains. In this system, magnetic domain-wall motion is fully reversible and the velocity of the walls varies exponentially as a function of out-of-plane electric-field strength.Peer reviewe

Alternating domains with uniaxial and biaxial magnetic anisotropy in epitaxial Fe films on BaTiO[sub 3]

We report on domain formation and magnetization reversal in epitaxial Fe films on ferroelectric BaTiO3 substrates with ferroelastica–c stripe domains. The Fe films exhibit biaxial magnetic anisotropy on top of c domains with out-of-plane polarization, whereas the in-plane lattice elongation of a domains induces uniaxial magnetoelasticanisotropy via inverse magnetostriction. The strong modulation of magnetic anisotropy symmetry results in full imprinting of the a–c domain pattern in the Fe films. Exchange and magnetostaticinteractions between neighboring magnetic stripes further influence magnetization reversal and pattern formation within the a and c domains.Peer reviewe

Characterization and Photovoltaic Properties of BiFeO3 Thin Films

Bismuth ferrite (BiFeO3) thin films were prepared by a spin-coating method. Crystal structure and optical properties of the BiFeO3 films were evaluated using X-ray diffraction. The lattice constants, crystallite size, and energy gap of BiFeO3 films depended on the concentration of the BiFeO3 precursor solution. BiFeO3/CH3NH3PbI3 photovoltaic devices were fabricated to investigate photovoltaic properties of BiFeO3. Current density–voltage characteristics of the photovoltaic devices showed rectifying behavior, indicating that BiFeO3 worked as an electron transport layer in CH3NH3PbI3-based photovoltaic devices

Construction of Photovoltaic Power Generation-storage System Using an Inverter with SiC FET and SBD

Abstract A power storage system using spherical Si solar cells, lithium-ion battery and a direct current-alternating current (DC-AC) converter was constructed. A small and light inverter system was developed by combining a maximum power point tracking charge controller, direct current-direct current (DC-DC) converter, and DC-AC converter. Performance evaluation of the inverter system with SiC field-effect transistors (FET) and Schottky barrier diodes (SBD) was carried out, and the DC-AC conversion efficiencies and their stability of the inverter were improved compared with those of the ordinary Si-FET/SBD based inverter