20 research outputs found

    Efficacy and safety of novel anticoagulant dabigatran in clinical practice for Japanese patients with non-valvular atrial fibrillation

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    Background: There is little evidence of the efficacy and safety of dabigatran in Japanese patients with non-valvular atrial fibrillation (NVAF). Methods and Results: We evaluated 300 consecutive patients with NVAF (68±11 years old, 209 men, 180 paroxysmal) who received 220 mg/day (203 patients) or 300 mg/day dabigatran (97 patients) at our hospital. Most patients (84%) had lower CHADS2 (congestive heart failure, hypertension, age>75 years, diabetes, stroke/transient ischemic attack) scores of 0 (n=60), 1 (n=114), or 2 (n=78) and lower HAS-BLED (hypertension, abnormal renal/liver function, stroke, bleeding history or predisposition) scores of 0 (n=39), 1 (n=114), or 2 (n=103). The estimated creatinine clearance was 77±24 mL/min, which was inversely correlated to age (r2=0.48, p<0.0001). Activated partial thromboplastin time was 42±9 s but was not dependent on sampling time. During follow-up of 263±160 days, an ischemic stroke occurred in 1 patient (0.3%), but no systemic embolism was observed. Some adverse events were reported for 70 (23%) patients, such as dyspepsia (n=42, 14%) or minor bleeding complications (n=11, 4%) resulting in discontinuation of dabigatran for 39 patients. However, no major complications were observed, and no patient died from adverse events or because of cardiovascular or stroke events. Conclusions: Dabigatran is safe and useful for the prevention of ischemic strokes in Japanese NVAF patients, but additional care should be taken for elderly patients

    Imaging the Evolution of <i>d</i> States at a Strontium Titanate Surface

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    Oxide electronics is a promising alternative to the conventional silicon-based semiconductor technology, owing to the rich functionalities of oxide thin films and heterostructures. In contrast to the silicon surface, however, the electronic structure of the SrTiO<sub>3</sub> surface, the most important substrate for oxide thin films growth, is not yet completely understood. Here we report on the electronic states of a reconstructed (001) surface of SrTiO<sub>3</sub> determined in real space, with scanning tunneling microscopy/spectroscopy and density functional theory calculations. We found a remarkable energy dependence of the spectroscopic image: Theoretical analysis reveals that symmetry breaking at the surface lifts the degeneracy in the <i>t</i><sub>2<i>g</i></sub> state (<i>d</i><sub><i>xy</i></sub>, <i>d</i><sub><i>yz</i></sub>, and <i>d</i><sub><i>zx</i></sub>) of Ti 3<i>d</i> orbitals, whose anisotropic spatial distribution leads to a sharp transition in the spectroscopic image as a function of energy. The knowledge obtained here could be used to gain further insights into emergent phenomena at the surfaces and interfaces with SrTiO<sub>3</sub>

    A Single-Atom-Thick TiO<sub>2</sub> Nanomesh on an Insulating Oxide

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    The electronic structures and macroscopic functionalities of two-dimensional (2D) materials are often controlled according to their size, atomic structures, and associated defects. This controllability is particularly important in ultrathin 2D nanosheets of transition-metal oxides because these materials exhibit extraordinary multifunctionalities that cannot be realized in their bulk constituents. To expand the variety of materials with exotic properties that can be used in 2D transition-metal-oxide nanosheets, it is essential to investigate fabrication processes for 2D materials. However, it remains challenging to fabricate such 2D nanosheets, as they are often forbidden because of the crystal structure and nature of their host oxides. In this study, we demonstrate the synthesis of a single-atom-thick TiO<sub>2</sub> 2D nanosheet with a periodic array of holes, that is, a TiO<sub>2</sub> nanomesh, by depositing a LaAlO<sub>3</sub> thin film on a SrTiO<sub>3</sub>(001)-(√13×√13)-<i>R</i>33.7° reconstructed substrate. In-depth investigations of the detailed structures, local density of states, and Ti valency of the TiO<sub>2</sub> nanomesh using scanning tunneling microscopy/spectroscopy, scanning transmission electron microscopy, and density functional theory calculations reveal an unexpected upward migration of the Ti atoms of the substrate surface onto the LaAlO<sub>3</sub> surface. These results indicate that the truncated TiO<sub>5</sub> octahedra on the surface of perovskite oxides are very stable, leading to semiconducting TiO<sub>2</sub> nanomesh formation. This nanomesh material can be potentially used to control the physical and chemical properties of the surfaces of perovskite oxides. Furthermore, this study provides an avenue for building functional atomic-scale oxide 2D structures and reveals the thin-film growth processes of complex oxides

    A Single-Atom-Thick TiO<sub>2</sub> Nanomesh on an Insulating Oxide

    No full text
    The electronic structures and macroscopic functionalities of two-dimensional (2D) materials are often controlled according to their size, atomic structures, and associated defects. This controllability is particularly important in ultrathin 2D nanosheets of transition-metal oxides because these materials exhibit extraordinary multifunctionalities that cannot be realized in their bulk constituents. To expand the variety of materials with exotic properties that can be used in 2D transition-metal-oxide nanosheets, it is essential to investigate fabrication processes for 2D materials. However, it remains challenging to fabricate such 2D nanosheets, as they are often forbidden because of the crystal structure and nature of their host oxides. In this study, we demonstrate the synthesis of a single-atom-thick TiO<sub>2</sub> 2D nanosheet with a periodic array of holes, that is, a TiO<sub>2</sub> nanomesh, by depositing a LaAlO<sub>3</sub> thin film on a SrTiO<sub>3</sub>(001)-(√13×√13)-<i>R</i>33.7° reconstructed substrate. In-depth investigations of the detailed structures, local density of states, and Ti valency of the TiO<sub>2</sub> nanomesh using scanning tunneling microscopy/spectroscopy, scanning transmission electron microscopy, and density functional theory calculations reveal an unexpected upward migration of the Ti atoms of the substrate surface onto the LaAlO<sub>3</sub> surface. These results indicate that the truncated TiO<sub>5</sub> octahedra on the surface of perovskite oxides are very stable, leading to semiconducting TiO<sub>2</sub> nanomesh formation. This nanomesh material can be potentially used to control the physical and chemical properties of the surfaces of perovskite oxides. Furthermore, this study provides an avenue for building functional atomic-scale oxide 2D structures and reveals the thin-film growth processes of complex oxides
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