Study of horizontal and vertical uniformity of B-doped layer on mosaic single crystal diamond wafers by using hot-filament chemical vapor deposition

Aiming at developing inch-sized processing of diamond, B-doped layer was grown on mosaic single-crystallin diamond wafers by using hot-filament chemical vapor deposition (CVD), which is expected to have an advantage in terms of the deposition area compared with microwave plasma (MWP) CVD. Uniformity in horizontal and vertical directions is studied. It is found that the junctions of the monocrystalline diamond domains in the mosaic wafer and the direction of the crystal off-angles against to these junctions are less effective to the uniformity of the impurity concentrations. On the other hand, it is suggested that excess incorporation of W from the filament suppresses the growth and incorporation of B. It is shown that millimeter scale or more precise control of the arrangement of the wafer and the filament enables to obtain more uniform and efficient doping

Radiation effect of X-ray with 100 kGy dose on the electrical properties of MESFET based on hydrogen-terminated diamond surface conductivity

The irradiation effect of X-ray on the electrical properties of Schottky-barrier diode (SBD) and metal-semiconductor field-effect transistors (MESFET) based on the surface conductivity of hydrogen-terminated single-crystal diamond (SCD) epilayers was investigated. The Ohmic contact was formed by a Pd/Ti/Au multilayer and the Schottky metal was Al thin film for the fabrication of the diamond SBDs and MESFETs. The X-ray irradiation was performed with a dose of 100 kGy. It was observed that both the forward current of the SBDs and the drain current of the MESFETs experienced a reduction after the X-ray irradiation. The type of the single-crystal diamond substrate had an obvious effect on the radiation properties. For the MESFETs on the type-Ib SCD substrate, the variation of the drain currents as the irradiation was inhomogeneous across the devices. For the MESFETs on the type-IIa SCD substrate, the reduction of the drain currents is more uniform and the threshold voltage changed little upon X-ray irradiation. The partial oxidation in the air of the exposure area in the device and the edge of the Al gate may be responsible for the degradation of the device performance under X-ray irradiation. The passivation technique with radiation-robustness is needed for diamond devices based on the surface conductivity of diamond

A diamond 14 MeV neutron energy spectrometer with high energy resolution

A self-standing single-crystal chemical vapor deposited diamond was obtained using lift-off method. It was fabricated into a radiation detector and response function measurements for 14 MeV neutrons were taken at the fusion neutronics source. 1.5% of high energy resolution was obtained by using the C-12(n, alpha)Be-9 reaction at an angle of 100 degrees with the deuteron beam line. The intrinsic energy resolution, excluding energy spreading caused by neutron scattering, slowing in the target and circuit noises was 0.79%, which was also the best resolution of the diamond detector ever reported

High-performance diamond radiation detectors produced by lift-off method

For stable semiconductor detector operation under harsh environments, an ideal single-crystal diamond without a charge trapping centre is required. For this study, a self-standing single-crystal CVD diamond was fabricated using a lift-off method. The reduction of charge trapping factors such as structural defects, point defects, and nitrogen impurities, was attempted using 0.2% of low-methane concentration growth and using a full metal seal chamber. A high-quality self-standing diamond with strong free-exciton recombination emission was obtained. Charge collection efficiencies were 100.1% for holes and 99.8% for electrons, provided that $\varepsilon_{\mathrm{diamond}}= 13.1\ \text{eV}$ and $\varepsilon_{\mathrm{Si}}=3.62\ \text{eV}$ . Energy resolutions were 0.38% for both holes and electrons. We produced a high-performance diamond radiation detector using the productive lift-off method