9 research outputs found
Tunable Multilevel Storage of Complementary Resistive Switching on Single-Step Formation of ZnO/ZnWO<sub><i>x</i></sub> Bilayer Structure via Interfacial Engineering
Tunable multilevel storage of complementary
resistive switching (CRS) on single-step formation of ZnO/ZnWO<sub><i>x</i></sub> bilayer structure via interfacial engineering
was demonstrated for the first time. In addition, the performance
of the ZnO/ZnWO<sub><i>x</i></sub>-based CRS device with
the voltage- and current-sweep modes was demonstrated and investigated
in detail. The resistance switching behaviors of the ZnO/ZnWO<sub><i>x</i></sub> bilayer ReRAM with adjustable RESET-stop
voltages was explained using an electrochemical redox reaction model
whose electron-hopping activation energies of 28, 40, and 133 meV
can be obtained from Arrhenius equation at RESET-stop voltages of
1.0, 1.3, and 1.5 V, respectively. In the case of the voltage-sweep
operation on the ZnO-based CRS device, the maximum array numbers (<i>N</i>) of 9, 15, and 31 at RESET-stop voltages of 1.4, 1.5,
and 1.6 V were estimated, while the maximum array numbers increase
into 47, 63, and 105 at RESET-stop voltages of 2.0, 2.2, and 2.4 V,
operated by the current-sweep mode, respectively. In addition, the
endurance tests show a very stable multilevel operation at each RESET-stop
voltage under the current-sweep mode
ZnO<sub>1–<i>x</i></sub> Nanorod Arrays/ZnO Thin Film Bilayer Structure: From Homojunction Diode and High-Performance Memristor to Complementary 1D1R Application
We present a ZnO<sub>1–<i>x</i></sub> nanorod array (NR)/ZnO thin film (TF) bilayer structure synthesized at a low temperature, exhibiting a uniquely rectifying characteristic as a homojunction diode and a resistive switching behavior as memory at different biases. The homojunction diode is due to asymmetric Schottky barriers at interfaces of the Pt/ZnO NRs and the ZnO TF/Pt, respectively. The ZnO<sub>1–<i>x</i></sub> NRs/ZnO TF bilayer structure also shows an excellent resistive switching behavior, including a reduced operation power and enhanced performances resulting from supplements of confined oxygen vacancies by the ZnO<sub>1–<i>x</i></sub> NRs for rupture and recovery of conducting filaments inside the ZnO TF layer. A hydrophobic behavior with a contact angle of ∼125° can be found on the ZnO<sub>1–<i>x</i></sub> NRs/ZnO TF bilayer structure, demonstrating a self-cleaning effect. Finally, a successful demonstration of complementary 1D1R configurations can be achieved by simply connecting two identical devices back to back in series, realizing the possibility of a low-temperature all-ZnO-based memory system
Single-Step Formation of ZnO/ZnWO<sub><i>x</i></sub> Bilayer Structure via Interfacial Engineering for High Performance and Low Energy Consumption Resistive Memory with Controllable High Resistance States
A spontaneously
formed ZnO/ZnWO<sub><i>x</i></sub> bilayer resistive memory
via an interfacial engineering by one-step sputtering process with
controllable high resistance states was demonstrated. The detailed
formation mechanism and microstructure of the ZnWO<sub><i>x</i></sub> layer was explored by X-ray photoemission spectroscopy (XPS)
and transmission electron microscope in detail. The reduced trapping
depths from 0.46 to 0.29 eV were found after formation of ZnWO<sub><i>x</i></sub> layer, resulting in an asymmetric <i>I</i>–<i>V</i> behavior. In particular, the
reduction of compliance current significantly reduces the switching
current to reach the stable operation of device, enabling less energy
consumption. Furthermore, we demonstrated an excellent performance
of the complementary resistive switching (CRS) based on the ZnO/ZnWO<sub><i>x</i></sub> bilayer structure with DC endurance >200
cycles for a possible application in three-dimensional multilayer
stacking
A Molecular Triangle as a Precursor Toward the Assembly of a Jar-Shaped Metallasupramolecule
The
reaction of Re<sub>2</sub>(CO)<sub>10</sub> and 1,1′-carbonyldiimidazole
in toluene afforded the molecular triangle [Re<sub>3</sub>(μ<sub>2</sub>-Im)<sub>3</sub>(CO)<sub>12</sub>] (<b>1</b>; Im = imidazolate).
This air-stable complex <b>1</b> acted as a precursor, which
could then be further transformed into the complex [{ReÂ(CO)<sub>3</sub>}<sub>3</sub>(μ<sub>2</sub>-Im)<sub>3</sub>(μ<sub>3</sub>-L)] (<b>2</b>; L = 1,3,5-trisÂ(benzimidazol-1-ylmethyl)-2,4,6-trimethylbenzene)
upon reaction with the flexible
ligand L under solvothermal conditions. Complex <b>2</b> can
also be produced directly in a one-pot reaction from Re<sub>2</sub>(CO)<sub>10</sub>, 1,1′-carbonyldiimidazole, and the flexible
ligand L. A single-crystal X-ray diffraction analysis showed that
compound <b>1</b> has a triangular-shaped structure, which is
the smallest rhenium triangle known, as of this writing. Complex <b>2</b> adopted a jar-shaped structure. The photophysical properties
of complexes <b>1</b> and <b>2</b> were studied
Direct Synthesis of Graphene with Tunable Work Function on Insulators via In Situ Boron Doping by Nickel-Assisted Growth
Work
function engineering, a precise tuning of the work function, is essential
to achieve devices with the best performance. In this study, we demonstrate
a simple technique to deposit graphene on insulators with in situ
controlled boron doping to tune the work function. At a temperature
higher than 1000 °C, the boron atoms substitute carbon sites
in the graphene lattice with neighboring carbon atoms, leading to
the graphene with a p-type doping behavior. Interestingly, the involvement
of boron vapor into the system can effectively accelerate the reaction
between nickel vapor and methane, achieving a fast graphene deposition.
The changes in surface potential and work function at different doping
levels were verified by Kelvin probe force microscopy, for which the
work function at different doping levels was shifted between 20 and
180 meV. Finally, the transport mechanism followed by the Mott variable-range
hopping model was found due to the strong disorder nature of the system
with localized charge-carrier states
A Molecular Triangle as a Precursor Toward the Assembly of a Jar-Shaped Metallasupramolecule
The
reaction of Re<sub>2</sub>(CO)<sub>10</sub> and 1,1′-carbonyldiimidazole
in toluene afforded the molecular triangle [Re<sub>3</sub>(μ<sub>2</sub>-Im)<sub>3</sub>(CO)<sub>12</sub>] (<b>1</b>; Im = imidazolate).
This air-stable complex <b>1</b> acted as a precursor, which
could then be further transformed into the complex [{ReÂ(CO)<sub>3</sub>}<sub>3</sub>(μ<sub>2</sub>-Im)<sub>3</sub>(μ<sub>3</sub>-L)] (<b>2</b>; L = 1,3,5-trisÂ(benzimidazol-1-ylmethyl)-2,4,6-trimethylbenzene)
upon reaction with the flexible
ligand L under solvothermal conditions. Complex <b>2</b> can
also be produced directly in a one-pot reaction from Re<sub>2</sub>(CO)<sub>10</sub>, 1,1′-carbonyldiimidazole, and the flexible
ligand L. A single-crystal X-ray diffraction analysis showed that
compound <b>1</b> has a triangular-shaped structure, which is
the smallest rhenium triangle known, as of this writing. Complex <b>2</b> adopted a jar-shaped structure. The photophysical properties
of complexes <b>1</b> and <b>2</b> were studied
A Molecular Triangle as a Precursor Toward the Assembly of a Jar-Shaped Metallasupramolecule
The
reaction of Re<sub>2</sub>(CO)<sub>10</sub> and 1,1′-carbonyldiimidazole
in toluene afforded the molecular triangle [Re<sub>3</sub>(μ<sub>2</sub>-Im)<sub>3</sub>(CO)<sub>12</sub>] (<b>1</b>; Im = imidazolate).
This air-stable complex <b>1</b> acted as a precursor, which
could then be further transformed into the complex [{ReÂ(CO)<sub>3</sub>}<sub>3</sub>(μ<sub>2</sub>-Im)<sub>3</sub>(μ<sub>3</sub>-L)] (<b>2</b>; L = 1,3,5-trisÂ(benzimidazol-1-ylmethyl)-2,4,6-trimethylbenzene)
upon reaction with the flexible
ligand L under solvothermal conditions. Complex <b>2</b> can
also be produced directly in a one-pot reaction from Re<sub>2</sub>(CO)<sub>10</sub>, 1,1′-carbonyldiimidazole, and the flexible
ligand L. A single-crystal X-ray diffraction analysis showed that
compound <b>1</b> has a triangular-shaped structure, which is
the smallest rhenium triangle known, as of this writing. Complex <b>2</b> adopted a jar-shaped structure. The photophysical properties
of complexes <b>1</b> and <b>2</b> were studied
A Molecular Triangle as a Precursor Toward the Assembly of a Jar-Shaped Metallasupramolecule
The
reaction of Re<sub>2</sub>(CO)<sub>10</sub> and 1,1′-carbonyldiimidazole
in toluene afforded the molecular triangle [Re<sub>3</sub>(μ<sub>2</sub>-Im)<sub>3</sub>(CO)<sub>12</sub>] (<b>1</b>; Im = imidazolate).
This air-stable complex <b>1</b> acted as a precursor, which
could then be further transformed into the complex [{ReÂ(CO)<sub>3</sub>}<sub>3</sub>(μ<sub>2</sub>-Im)<sub>3</sub>(μ<sub>3</sub>-L)] (<b>2</b>; L = 1,3,5-trisÂ(benzimidazol-1-ylmethyl)-2,4,6-trimethylbenzene)
upon reaction with the flexible
ligand L under solvothermal conditions. Complex <b>2</b> can
also be produced directly in a one-pot reaction from Re<sub>2</sub>(CO)<sub>10</sub>, 1,1′-carbonyldiimidazole, and the flexible
ligand L. A single-crystal X-ray diffraction analysis showed that
compound <b>1</b> has a triangular-shaped structure, which is
the smallest rhenium triangle known, as of this writing. Complex <b>2</b> adopted a jar-shaped structure. The photophysical properties
of complexes <b>1</b> and <b>2</b> were studied
Large Scale and Orientation-Controllable Nanotip Structures on CuInS<sub>2</sub>, Cu(In,Ga)S<sub>2</sub>, CuInSe<sub>2</sub>, and Cu(In,Ga)Se<sub>2</sub> by Low Energy Ion Beam Bombardment Process: Growth and Characterization
One-step facile methodology to create
nanotip arrays on chalcopyrite materials (such as CuInS<sub>2</sub>, CuÂ(In,Ga)ÂS<sub>2</sub>, CuInSe<sub>2</sub>, and CuÂ(In,Ga)ÂSe<sub>2</sub>) via a low energy ion beam bombardment process has been demonstrated.
The mechanism of formation for nanotip arrays has been proposed by
sputtering yields of metals and reduction of metals induced by the
ion beam bombardment process. The optical reflectance of these chalcopyrite
nanotip arrays has been characterized by UV–vis spectrophotometer
and the efficient light-trapping effect has been observed. Large scale
(∼4′′) and high density (10<sup>10</sup> tips/cm<sup>2</sup>) of chalcopyrite nanotip arrays have been obtained by using
low ion energy (< 1 kV), short processing duration (< 30 min),
and template-free. Besides, orientation and length of these chalcopyrite
nanotip arrays are controllable. Our results can be the guide for
other nanostructured materials fabrication by ion sputtering and are
available for industrial production as well