Review of damage problems of the soft substrate interlayer film

This paper reviews the research progress of soft substrate interlayer film, including the applications and the preparation methods of the soft substrate interlayer film, the testing means of the films’ structure and composition and the researches of the film damage, especially the dynamic damage. As well as the future research directions and applications are put forward

Atomic Layer Deposition of High Quality HfO\u3csub\u3e2\u3c/sub\u3e Using In-Situ Formed Hydrophilic Oxide as an Interfacial Layer

High-quality HfO2 cannot be grown directly on Si substrate using atomic layer deposition (ALD), and an interfacial oxide layer is needed. Traditionally, interfacial oxide layer is formed either in SC1 solution (2 NH4OH: 4 H2O2: 200 H2O) or by ozonated water spraying. A highly hydrophilic SiO2 interfacial layer was in-situ formed in the ALD chamber using 1 cycle of ozone and water. The HfO2 deposited on this interfacial layer showed great growth linearity. The gate leakage current is comparable to that formed using chemical oxide as the interfacial layer. The capacitance-voltage (C-V) curves have negligible frequency dispersion and hysteresis, which suggest high quality in both the interface and electrical properties. The in-situ formation of hydrophilic interfacial layer have advantages over the traditional interfacial layer. This might be useful for formation of interfacial layer on sophisticated 3-D MOS structures such as FinFETs and nanowire FETs. In addition, the chemical oxidation step can be eliminated from the integrated circuits manufacturing processes, which is economically beneficial to the industry

Near-Infrared Optical Absorption Enhanced in Black Silicon via Ag Nanoparticle-Induced Localized Surface Plasmon

Due to the localized surface plasmon (LSP) effect induced by Ag nanoparticles inside black silicon, the optical absorption of black silicon is enhanced dramatically in near-infrared range (1,100 to 2,500 nm). The black silicon with Ag nanoparticles shows much higher absorption than black silicon fabricated by chemical etching or reactive ion etching over ultraviolet to near-infrared (UV-VIS-NIR, 250 to 2,500 nm). The maximum absorption even increased up to 93.6% in the NIR range (820 to 2,500 nm). The high absorption in NIR range makes LSP-enhanced black silicon a potential material used for NIR-sensitive optoelectronic device. PACS 78.67.Bf; 78.30.Fs; 78.40.-q; 42.70.G

Enhanced Performance of Planar Perovskite Solar Cells Using Low-Temperature Solution-Processed Al-Doped SnO\u3csub\u3e2\u3c/sub\u3e as Electron Transport Layers

Lead halide perovskite solar cells (PSCs) appear to be the ideal future candidate for photovoltaic applications owing to the rapid development in recent years. The electron transport layers (ETLs) prepared by low-temperature process are essential for widespread implementation and large-scale commercialization of PSCs. Here, we report an effective approach for producing planar PSCs with Al3+ doped SnO2 ETLs prepared by using a low-temperature solution-processed method. The Al dopant in SnO2 enhanced the charge transport behavior of planar PSCs and increased the current density of the devices, compared with the undoped SnO2 ETLs. Moreover, the enhanced electrical property also improved the fill factors (FF) and power conversion efficiency (PCE) of the solar cells. This study has indicated that the low-temperature solution-processed Al-SnO2 is a promising ETL for commercialization of planar PSCs

Enhanced Crystallinity of Triple-Cation Perovskite Film via Doping NH\u3csub\u3e4\u3c/sub\u3eSCN

The trap-state density in perovskite films largely determines the photovoltaic performance of perovskite solar cells (PSCs). Increasing the crystal grain size in perovskite films is an effective method to reduce the trap-state density. Here, we have added NH4SCN into perovskite precursor solution to obtain perovskite films with an increased crystal grain size. The perovskite with increased crystal grain size shows a much lower trap-state density compared with reference perovskite films, resulting in an improved photovoltaic performance in PSCs. The champion photovoltaic device has achieved a power conversion efficiency of 19.36%. The proposed method may also impact other optoelectronic devices based on perovskite films

Construction and Properties of Polyvinyl Alcohol/Chitosan Electrospun Film Loaded with Catechins

In order to develop a new bio-based food packaging material and improve the bioavailability of natural phenolic compounds, an electrospinning film loaded with Catechin was prepared by electrospinning using catechin (CT), polyvinyl alcohol (PVA) and chitosan (CS) as substrates. The microstructure and diameter distribution of the electrospun films were analyzed by scanning electron microscopy. The interaction between CT and film forming substrate was studied by Fourier infrared spectroscopy, X-ray diffraction and thermal analysis. The effects of CT addition on the physical and chemical properties of the electrospun film were investigated by taking the mechanical properties, gas permeability and antioxidant activity of the film as parameters. Finally, the preservation effect of electrospun film was analyzed by sensory evaluation, water loss rate and titrable acid content. The results showed that the intermolecular hydrogen bond was formed between CT and CS, and the hydrophobic property was improved. When the concentration of CT was 0.8%, the comprehensive performance of the electrospun film was the best. It had good morphology, dense structure and good thermal stability. At this point, the tensile strength and elongation at break reached the maximum, which were 12.89 MPa and 62.45% respectively. The water solubility, water vapor transmittance and CO2 transmittance were the lowest, which were 29.51%, 0.1532 g·mm·(m2·h·kPa)−1 and 5.9 g·(m2·h)−1, respectively. Besides, the scavenging rate of DPPH free radical also reached the maximum value, which was 71.02%. Moreover, the electrospun membrane had sustained release effect. When the CT concentration was 0.8%, its cumulative release rate was the highest. The preservation research results showed that the electrospun film could effectively delay the deterioration of strawberry, and the electrospun film with 0.8% CT concentration had the best preservation effect. In conclusion, the electrospun film with 0.8% CT concentration had the best comprehensive performance, and it had certain antioxidation and fresh-keeping ability

Electronic Properties of a New All-Inorganic Perovskite TlPbI\u3csub\u3e3\u3c/sub\u3e Simulated by the First Principles

All-inorganic perovskites have been recognized as promising photovoltaic materials. We simulated the perovskite material of TlPbI3 using ab initio electronic structure calculations. The band gap of 1.33 eV is extremely close to the theoretical optimum value. Compared TlPbI3 with CsPbI3, the total energy (−3980 eV) of the former is much lower than the latter. The partial density of states (PDOS) of TlPbI3 shows that a strong bond exists between Tl and I, resulting in the lower total energy and more stable existence than CsPbI3

Achieving GWAS with Homomorphic Encryption

One way of investigating how genes affect human traits would be with a genome-wide association study (GWAS). Genetic markers, known as single-nucleotide polymorphism (SNP), are used in GWAS. This raises privacy and security concerns as these genetic markers can be used to identify individuals uniquely. This problem is further exacerbated by a large number of SNPs needed, which produce reliable results at a higher risk of compromising the privacy of participants. We describe a method using homomorphic encryption (HE) to perform GWAS in a secure and private setting. This work is based on a proposed algorithm. Our solution mainly involves homomorphically encrypted matrix operations and suitable approximations that adapts the semi-parallel GWAS algorithm for HE. We leverage the complex space of the CKKS encryption scheme to increase the number of SNPs that can be packed within a ciphertext. We have also developed a cache module that manages ciphertexts, reducing the memory footprint. We have implemented our solution over two HE open source libraries, HEAAN and SEAL. Our best implementation took $24.70$ minutes for a dataset with $245$ samples, over $4$ covariates and $10643$ SNPs. We demonstrate that it is possible to achieve GWAS with homomorphic encryption with suitable approximations