Di-μ-benzoato-κ3 O,O′:O′;κ3 O:O,O′-bis­[(benzoato-κ2 O,O′)(1,10-phenanthroline-κ2 N,N′)cadmium]

The dinuclear title compound, [Cd2(C7H5O2)4(C12H8N2)2], lies on a crystallographic twofold axis. The CdII ions are connected by two bridging benzoate anions and each ion is seven-coordinated by five O atoms from three benzoate ligands and by two N atoms from 1,10-phenanthroline. The benzoate ligands adopt two different coordination modes, acting as bidentate and bridging tridentate ligands. The discrete neutral mol­ecules further extend their structure into a three-dimensional supra­molecular framework by inter­molecular π–π [inter­planar distances of 3.392 (4) Å] and C—H⋯π stacking inter­actions [H–mean plane = 2.567 (4) and 2.781 (4) Å]

Hematopoietic and lymphatic cancers in patients with periodontitis : a systematic review and meta-analysis

Numerous studies have explored the correlation of periodontal disease (PD) with risk of hematopoietic and lymphatic cancers, but the findings were inconsistent. Therefore, we did a meta-analysis to ascertain the correlation of PD with risk of incident hematopoietic and lymphatic cancers. The authors searched relevant studies in databases (PubMed, Web of Science, and MEDLINE). The summary relative risk (RR) along with 95% confidence interval (CI) was calculated by use of random or fixed effects models. Six studies were included in qualitative synthesis. The pooled analysis revealed that PD was significantly associated with an increased risk of hematopoietic and lymphatic cancers (RR = 1.17; 95% CI = 1.07?1.27; P = 0). Stratified analysis showed the association of PD with hematopoietic and lymphatic cancers remained significant in the never smokers (RR = 1.28; 95% CI = 1.07?1.54; P = 0.007), and in the American population (RR = 1.17; 95% CI = 1.05?1.30; P = 0.003), respectively. Never smokers population and the American population with PD have a higher risk of developing hematopoietic and lymphatic cancers. PD might be considered as a risk factor for hematopoietic and lymphatic cancers

The Exact Distribution of the Condition Number of Complex Random Matrices

Let Gm×n (m≥n) be a complex random matrix and W=Gm×nHGm×n which is the complex Wishart matrix. Let λ1>λ2>…>λn>0 and σ1>σ2>…>σn>0 denote the eigenvalues of the W and singular values of Gm×n, respectively. The 2-norm condition number of Gm×n is κ2Gm×n=λ1/λn=σ1/σn. In this paper, the exact distribution of the condition number of the complex Wishart matrices is derived. The distribution is expressed in terms of complex zonal polynomials

Dilute bismides for near and mid-infrared applications

Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III-V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in near-infrared (NIR) and mid-infrared (MIR) optoelectronics. Recent progresses on molecular beam epitaxy (MBE) of novel III-Sb-Bi, i.e. GaSbBi and InSbBi thin films from our group are summarised in this paper. Quantum well structures based on GaSbBi and InGaAsBi aiming for the optical communication window were grown and characterized. © 2013 IEEE

Nitrogen defects and ferromagnetism of Cr-doped AlN diluted magnetic semiconductor from first principles

High Curie temperature of 900 K has been reported in Cr-doped AlN diluted magnetic semiconductors prepared by various methods, which is exciting for spintronic applications. It is believed that N defects play important roles in achieving the high temperature ferromagnetism in good samples. Motivated by these experimental advances, we use a full-potential density-functional-theory method and supercell approach to investigate N defects and their effects on ferromagnetism of (Al,Cr)N with N vacancies (V_N). Calculated results are in agreement with experimental observations and facts of real Cr-doped AlN samples and their synthesis. Our first-principles results are useful to elucidating the mechanism for the ferromagnetism and exploring high-performance Cr-doped AlN diluted magnetic semiconductors.Comment: 8 pages with figures include