Charge ordering and interlayer phase coherence in quantum Hall superlattices

The possibility of the existence of states with a spontaneous interlayer phase coherence in multilayer electron systems in a high perpendicular to the layers magnetic field is investigated. It is shown that phase coherence can be established in such systems only within individual pairs of adjacent layers, while such coherence does not exist between layers of different pairs. The conditions for stability of the state with interlayer phase coherence against transition to a charge-ordered state are determined. It is shown that in the system with the number of layers N\leq 10 these conditions are satisfied at any value of the interlayer distance d. For N>10 there are two intervals of stability: at sufficiently large and at sufficiently small d. For N\to \infty the stability interval in the region of small d vanishesComment: 10 page

Relaxation of superflow in a network: an application to the dislocation model of supersolidity of helium crystals

We have considered the dislocation network model for the supersolid state in He-4 crystals. In difference with uniform 2D and 3D systems, the temperature of superfluid transition T_c in the network is much smaller than the degeneracy temperature T_d. It is shown that a crossover into a quasi superfluid state occurs in the temperature interval between T_c and T_d. Below the crossover temperature the time of decay of the flow increases exponentially under decrease of the temperature. The crossover has a continuous character and the crossover temperature does not depend on the density of dislocations.Comment: Corrected typo

Impurity induced bound states and proximity effect in a bilayer exciton condensate

The effect of impurities which induce local interlayer tunneling in bilayer exciton condensates is discussed. We show that a localized single fermion bound state emerges inside the gap for any strength of impurity scattering and calculate the dependence of the impurity state energy and wave function on the potential strength. We show that such an impurity induced single fermion state enhances the interlayer coherence around it, and is similar to the superconducting proximity effect. As a direct consequence of these single impurity states, we predict that a finite concentration of such impurities will increase the critical temperature for exciton condensation.Comment: 4 pages, 2 figure

Disruption of the three-body gravitational systems: Lifetime statistics

We investigate statistics of the decay process in the equal-mass three-body problem with randomized initial conditions. Contrary to earlier expectations of similarity with "radioactive decay", the lifetime distributions obtained in our numerical experiments turn out to be heavy-tailed, i.e. the tails are not exponential, but algebraic. The computed power-law index for the differential distribution is within the narrow range, approximately from -1.7 to -1.4, depending on the virial coefficient. Possible applications of our results to studies of the dynamics of triple stars known to be at the edge of disruption are considered.Comment: 13 pages, 2 tables, 3 figure

Grouping Method Of Image Fragments Of Adjacent Dislocation Etch Pits Of The Semiconductor Wafer

An increase in production volumes of gallium arsenide semiconductor devices determines the need for better control of dislocations of semiconductor wafer.The grouping method of image fragments of adjacent dislocation etch pits of the semiconductor wafer is proposed in the article. Adjacent fragments will be allocated in the pre-binarized image of wafer surface, which contains adjacent fragments of etch pits of dislocation loops after treatment by the described method. Improved methods for determining the loop line width determines the edge line width of etch pits of suspected dislocations, given the variability of their display in the binarized image. The current loop line width is compared to the reference line width of the dislocation loop.The grouping method of image fragments of adjacent dislocation etch pits of the semiconductor wafer defines recovery of loop lines branching, takes into account various options of line adjacency and determines the direction of further recovery of loop line of dislocation etch pits. A step by step description of the method is given