CHROMOSOME ABERRATIONS IN LYMPHOCYTES OF RESIDENTS LIVING IN BUILDINGS CONSTRUCTED WITH RADIOACTIVELY CONTAMINATED REBARS

Using the G-banding technique, we examined lymphocytes from 90 individuals (43 males and 47 females, median age 31 years ) living in buildings constructed with radioactively contaminated rebars. Forty-five nonexposed control subjects( 22 males and 23 females, median age 30 years), matched to the radiation-exposed individuals by sex and age, were selected for comparison. At least 500 metaphases were checked for each individual. All recognizable structural aberrations of chromosomes or chromatids were recorded. After adjusting for age and smoking status, both the percentage of cells with aberrant chromosomes (PCAC) and the number of aberrant chromosomes per 100 cells (NAC) were found to be significantly higher in the radiation-exposed females than in the control females (p < 0.05 for PCAC and NAC). This difference, however, was not observed in the comparison of radiation-exposed and control males. This suggests a possible interaction between sex and radiation exposure in their effects on chromosome aberrations. Copyright (C) 2001 National Science Council, ROC and S. Karger AG, Basel

低表面缺陷密度之磊晶基板的製造方法

本發明是低表面缺陷密度之磊晶基板的製造方法。該方法是先將基材表面形成多數凹洞，接著自上開始橫向磊晶形成第一磊晶層，以減少基材對應發生在該等凹洞位置之缺陷向上延伸至第一磊晶層，然後於第一磊晶層上形成一對應錯位於該等凹洞位置而遮覆部分表面用以阻擋基材對應發生在該等凹洞位置之間的缺陷再向上延伸的阻擋層，最後自第一磊晶層表面未被阻擋層遮覆之區域橫向磊晶形成包覆阻擋層的第二磊晶層，即製得表面缺陷密度極低的磊晶基板。 This invention mainly provides a method of making a low-defect-density epitaxial substrate. The first step of the method is to form cavities sunk from a base-substrate. Then, laterally overgrow a first-epitaxial layer from the surface of the base-substrate to avoid defects corresponding to the cavities of the base-substrate grows up to the first-epitaxial layer. The third step is to form a stop layer corresponding to the cavities from the surface of the first-epitaxial layer to stop defects of the first-epitaxial layer to grow up. Finally, form a second-epitaxial layer from the co-surface of the first-epitaxial layer and the stop layer, and make the low-defect-density epitaxial substrate. 【創作特點】 因此，本發明之一目的，即在提供一種低表面缺陷密度之磊晶基板的製造方法。 於是，本發明一種低表面缺陷密度之磊晶基板的製造方法，是先將一基材表面形成多數間隔散佈之凹洞。 然後於該基材表面開始橫向磊晶形成一填覆入該多數凹洞中並封閉該多數凹洞的第一磊晶層。 繼而於該第一磊晶層表面形成一呈現預定圖像以遮覆該第一磊晶層表面預定區域的阻擋層。 最後自該第一磊晶層表面未被該阻擋層遮覆之區域橫向磊晶形成一包覆該阻擋層且表面缺陷密度不大於105 cm -2 的第二磊晶層，即製得該磊晶基板。 本發明之功效在於以基材形成的多數凹洞與凸島降低基材缺陷向上延伸累積的機率，並以阻擋層阻擋基材缺陷再向上延伸，以提供表面缺陷密度極低的磊晶基板

HIGH EXTRACTION EFFICIENCY OF SOLIDSTATE LIGHT EMITTING DEVICE

本發明提供一種高光取出率之固態發光元件，包含：一圖案化藍寶石單晶基材、一疊置於該圖案化藍寶石單晶基材並為六方晶系的緩衝層，及一疊置於該緩衝層的固態發光件。該圖案化藍寶石單晶基材具有複數凹槽定義面以定義出複數凹槽。每一凹槽定義面具有三依序連接的傾斜側面部或四依序連接的傾斜側面部。該緩衝層具有一連接該圖案化藍寶石單晶基材的第一層區及複數分別填置於該等凹槽內的第二層區

METHOD OF MAKING A LOW-DEFECT-DENSITY EPITAXIAL SUBSTRATE AND THE PRODUCT MADE THEREFROM

本發明是低表面缺陷密度之磊晶基板的製造方法及其製品。該方法是先將基材表面形成多數凹洞,接著自上開始橫向磊晶形成第一磊晶層,以減少基材對應發生在該等凹洞位置之缺陷向上延伸至第一磊晶層,然後於第一磊晶層上形成一對應錯位於該等凹洞位置而遮覆部分表面用以阻擋基材對應發生在該等凹洞位置之間的缺陷再向上延伸的阻擋層,最後自第一磊晶層表面未被阻擋層遮覆之區域橫向磊晶形成包覆阻擋層的第二磊晶層,即製得表面缺陷密度極低的磊晶基板