The release of dissolved actinium to the ocean : A global comparison of different end-members

Author Posting. © Elsevier B.V., 2007. This is the author's version of the work. It is posted here by permission of Elsevier B.V. for personal use, not for redistribution. The definitive version was published in Marine Chemistry 109 (2008): 409-420, doi:10.1016/j.marchem.2007.07.005.The measurement of short-lived 223Ra often involves a second measurement for supported activities, which represents 227Ac in the sample. Here we exploit this fact, presenting a set of 284 values on the oceanic distribution of 227Ac, which was collected when analyzing water samples for short-lived radium isotopes by the radium delayed coincidence counting system. The present work compiles 227Ac data from coastal regions all over the northern hemisphere, including values from ground water, from estuaries and lagoons, and from marine endmembers. Deep-sea samples from a continental slope off Puerto Rico and from an active vent site near Hawaii complete the overview of 227Ac near its potential sources. The average 227Ac activities of nearshore marine end-members range from 0.4 dpm * m-3 at the Gulf of Mexico to 3.0 dpm *m-3 in the coastal waters of the Korean Strait. In analogy to 228Ra, we find the extension of adjacent shelf regions to play a substantial role for 227Ac activities, although less pronounced than for radium, due to its weaker shelf source. Based on previously published values, we calculate an open ocean 227Ac inventory of 1.35 * 1018 dpm 227Acex in the ocean, which corresponds to 37 moles, or 8.4 kg. This implies a flux of 127 dpm*m-2*y-1 from the deep-sea floor. For the shelf regions, we obtain a global inventory of 227Ac of 4.5 * 1015 dpm, which cannot be converted directly into a flux value, as the regional loss term of 227Ac to the open ocean would have to be included. Ac has so far been considered to behave similarly to Ra in the marine environment, with the exception of a strong Ac source in the deep-sea due to 231Paex. Here, we present evidence of geochemical differences between Ac, which is retained in a warm vent system, and Ra, which is readily released (Moore et al., submitted). Another potential mechanism of producing deviations in 227Ac/228Ra and daughter isotope ratios from the expected production value of lithogenic material is observed at reducing environments, where enrichment in uranium may occur. The presented data here may serve as a reference for including 227Ac in circulation models, and the overview provides values for some end-members that contribute to the global Ac distribution

Quaternary InGaAsSb Thermophotovoltaic Diode Technology

Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency ({eta}{sub TPV}) and a power density (PD) of {eta}{sub TPV} = 19% and PD=0.58 W/cm{sup 2} were measured for T{sub radiator} = 950 C and T{sub diode} = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be {eta}{sub TPV} = 26% and PD = 0.75 W/cm{sup 2}. These limits are extended to {eta}{sub TPV} = 30% and PD = 0.85W/cm{sup 2} if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are {approx}10% lower than the predicted semi-empirical limit to open circuit voltage for a device having absorbing substrate; the voltages are {approx}17% below that for an Auger-limited device having back surface reflector and two-pass optical design

0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology

Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm{sup 2} respectively at operating at temperatures of T{sub radiator} = 950 C and T{sub diode} = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and {approx}0.85 W/cm{sup 2} could be attained under the above operating temperatures

A late role for a subset of neurogenic genes to limit sensory precursor recruitments in Drosophila embryos

In Drosophila , mutations in a class of genes, the neurogenic genes, produce an excess of neurons. This neural hyperplasia has been attributed to the formation of more than the normal number of neuronal precursor cells at the expense of epidermal cells. In order to find out whether the neurogenic genes only act at this intial step of neurogenesis, we studied the replication pattern of the sensory organ precursor cells by monitoring BrdU incorporation in embryos mutant for Notch ( N ), Delta ( Dl ), mastermind ( mam ), almondex ( amx ), neuralized ( neu ), big brain ( bib ) and the Enhancer of split -Complex ( E ( spl )- C ). Using temperature sensitive alleles of two of the neurogenic genes, DI and N , we also induced an acute increase of replicating sensory precursors by shifting briefly to the restricted temperature. We have found that the loss of function of all the seven neurogenic loci that were tested causes an increase in replicating sensory precursor cells, consistent with the model that these neurogenic genes normally participate in the process of restricting the number of neuronal precursors. Whereas the temporal pattern of replication appeared normal in mutants of five of the seven neurogenic loci, in N and mam embryos replicating PNS cells are present beyond the time when they normally undergo replication. Experiments with colchicine suggest that many of these late replicating cells may be newly emerging precursors and probably not additional cell divisions of already recruited precursors. Thus, different neurogenic genes may be required over different periods of time for the specification of sensory precursor cells.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/47511/1/427_2004_Article_BF00188736.pd

Triple-axis X-ray Reciprocal Space Mapping of In(y)Ga(1-y)As Thermophotovoltaic Diodes Grown on (100) InP Substrates

Analysis of the composition, strain-relaxation, layer-tilt, and the crystalline quality of In{sub y}Ga{sub 1-y}As/InP{sub 1-x}As{sub x} thermophotovoltaic (TPV) diodes grown by metal organic vapor phase epitaxy (MOVPE) is demonstrated using triple-axis x-ray reciprocal space mapping techniques. In{sub 0.53}Ga{sub 0.47}As (E{sub gap} = 0.74eV) n/p junction diodes are grown lattice matched (LM) to InP substrates and lattice mismatched (LMM) In{sub 0.67}Ga{sub 0.33}As (E{sub gap} = 0.6eV) TPV diodes are grown on three-step InP{sub 1-x}As{sub x} (0 < x < 0.32) buffer layers on InP substrates. X-ray reciprocal space maps about the symmetric (400) and asymmetric (533) reciprocal lattice points (RELPs) determine the in-plane and out-of-plane lattice parameters and strain of the In{sub y}Ga{sub 1-y}As TPV active layer and underlying InP{sub 1-x}As{sub x} buffers. Triple-axis x-ray rocking curves about the LMM In{sub 0.67}Ga{sub 0.33}As RELP show an order of magnitude increase of its full width at half maximum (FWHM) compared to that from the LM In{sub 0.53}Ga{sub 0.47}As (250asec vs. 30asec). Despite the significant RELP broadening the photovoltaic figure of merits show that the electronic quality of the LMM In{sub 0.67}Ga{sub 0.33}As approaches that of the lattice matched diode material. This indicates that misfit-related crystalline imperfections are not dominating the photovoltaic response of the optimized LMM In{sub 0.67}Ga{sub 0.33}As material compared with the intrinsic recombination processes and/or recombination through native point defects which would be present in both LMM and LM diode material. However, additional RELP broadening in non-optimized LMM In{sub 0.67}Ga{sub 0.33}As n/p junction diodes does correspond to significant degradation of TPV diode open circuit voltage and minority carrier lifetime demonstrating that there is correlation between x-ray FWHM and the electronic performance of the LMM TPV diodes