5 research outputs found
Band Alignment at GaN/Single-Layer WSe<sub>2</sub> Interface
We
study the band discontinuity at the GaN/single-layer (SL) WSe<sub>2</sub> heterointerface. The GaN thin layer is epitaxially grown
by molecular beam epitaxy on chemically vapor deposited SL-WSe<sub>2</sub>/c-sapphire. We confirm that the WSe<sub>2</sub> was formed
as an SL from structural and optical analyses using atomic force microscopy,
scanning transmission electron microscopy, micro-Raman, absorbance,
and microphotoluminescence spectra. The determination of band offset
parameters at the GaN/SL-WSe<sub>2</sub> heterojunction is obtained
by high-resolution X-ray photoelectron spectroscopy, electron affinities,
and the electronic bandgap values of SL-WSe<sub>2</sub> and GaN. The
valence band and conduction band offset values are determined to be
2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type
II band alignment. The band alignment parameters determined here provide
a route toward the integration of group III nitride semiconducting
materials with transition metal dichalcogenides (TMDs) for designing
and modeling of their heterojunction-based electronic and optoelectronic
devices