NON-FUNCTIONAL SHOPPING MOTIVES AMONG IRANIAN CONSUMERS

This study aims to explore the non functional shopping motives among Iranian consumers. In addition, the effects of marital status, gender, age and residential region as an indicator for social class on the non-functional shopping motives are investigated. This paper uses a self-reported and 15 items questionnaire. The analysis is done based on 363 returned and usable questionnaires. Multivariate analysis of variance is applied for this study. MANOVA results show that marital status, gender, age and region have different significant effects on the non-functional shopping motives among Iranian consumers.Consumer Behavior, Shopping Motives, Non-functional Motives, Iran

Photoassisted Nanoscale Memory Resistors

Memristors or memory resistors are promising two-terminal devices, which have the potential to revolutionize current electronic memory technologies. Memristors have been extensively investigated and reported to be practical devices, although they still suffer from poor stability, low retention time, and laborious fabrication processes. The primary aim of this project was to achieve a device structure of quantum dots or thin films to address a fundamental challenge of unstable resistive switching behavior in memristors. Moreover, we aimed to investigate the effects of light illumination in terms of intensity and wavelength on the performance of the fabricated memristor. The parameters such as power consumption, retention time, endurance, and stability were investigated to determine the overall performance of the device. The experiment was designed and divided into three steps. First, a memristor was designed, fabricated, and characterized to explore the resistive switching mechanism in the device. Second, the same material used in the first step was incorporated into a photodetector, which was characterized to investigate the device photosensitivity, detectivity, responsivity, and photocurrent to dark current ratio. Finally, a new device was designed, fabricated, and characterized, which showed both memristivity and photodetectivity properties. The device is called a photomemristor since it has both functions of a memristor and a photodetector. The “bottom-up” approach was used for fabricating the proposed memristor. In bottom-up methodology, nanostructures are synthesized and then assembled onto the substrate by stacking crystal planes onto each other. The fabricated memristors demonstrated bipolar resistive switching behavior with a low working voltage, efficient power consumption, and high endurance. We suggested the resistive switching mechanism of the device is related to the formation and rupture of conducting filaments inside the switching layer of the memristor. Moreover, the conduction mechanism and electron transport in the switching layer of the device during the resistive switching process were analyzed. In addition, the effect of light illumination on the performance of the device was investigated and the SET voltage of the memristor was reduced as the light intensity increased. A gold-coated probe tip was used as the top electrode to confine the conductive filaments growth. The obtained results demonstrate significant improvement in the resistive switching behavior in terms of stability and uniformity compared to similar devices with larger electrode surface area. This work provides new insights and suggests a measurement setup to further understand the resistive switching behavior in metal oxide and perovskite thin films for future applications of optoelectronic memristors in logic circuits, digital data storage, the internet of things, and neuromorphic computing

NON-FUNCTIONAL SHOPPING MOTIVES AMONG IRANIAN CONSUMERS

This study aims to explore the non functional shopping motives among Iranian consumers. In addition, the effects of marital status, gender, age and residential region as an indicator for social class on the non-functional shopping motives are investigated. This paper uses a self-reported and 15 items questionnaire. The analysis is done based on 363 returned and usable questionnaires. Multivariate analysis of variance is applied for this study. MANOVA results show that marital status, gender, age and region have different significant effects on the non-functional shopping motives among Iranian consumers

Resistive switching in FTO/CuO-Cu2O/Au memory devices

Memristors are considered to be next-generation non-volatile memory devices owing to their fast switching and low power consumption. Metal oxide memristors have been extensively investigated and reported to be promising devices, although they still suffer from poor stability and laborious fabrication process. Herein, we report a stable and power-efficient memristor with novel heterogenous electrodes structure and facile fabrication based on CuO-Cu2O complex thin films. The proposed structure of the memristor contains an active complex layer of cupric oxide (CuO) and cuprous oxide (Cu2O) sandwiched between fluorine-doped tin oxide (FTO) and gold (Au) electrodes. The fabricated memristors demonstrate bipolar resistive switching (RS) behavior with a low working voltage (~1 V), efficient power consumption, and high endurance over 100 switching cycles. We suggest the RS mechanism of the proposed device is related to the formation and rupture of conducting filaments inside the memristor. Moreover, we analyze the conduction mechanism and electron transport in the active layer of the device during the RS process. Such a facile fabricated device has a promising potential for future memristive applications

Effects of high‑temperature annealing on the performance of copper oxide photodetectors

Copper oxide thin films are grown using copper nanofilms oxidized at high annealing temperatures. The thin film crystallinity and surface morphology are probed using the X-ray diffractometer and scanning electron microscopy, indicating that the crystalline quality of the copper oxide thin films is improved by increasing the annealing temperature. Under ultraviolet–visible light illumination, the fabricated device with thin films annealed at 900 °C and the corresponding bandgap of 2.8 eV demonstrates the high responsivity of 15.1 A/W and maximum detectivity of 4.52 × 1012 cmHz1/2/W. The photosensitivity of thin films annealed at 900 °C is more than ten times higher than that of thin films annealed at 800 °C. The fabricated device works as a visible–ultraviolet photodetector and maintains uniform and stable performance for a tested period of eight weeks