112 research outputs found

    Photoelectrochemical water splitting: silicon photocathodes for hydrogen evolution

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    The development of low cost, scalable, renewable energy technologies is one of today's most pressing scientific challenges. We report on progress towards the development of a photoelectrochemical water-splitting system that will use sunlight and water as the inputs to produce renewable hydrogen with oxygen as a by-product. This system is based on the design principle of incorporating two separate, photosensitive inorganic semiconductor/liquid junctions to collectively generate the 1.7-1.9 V at open circuit needed to support both the oxidation of H_2O (or OH^-) and the reduction of H^+ (or H_2O). Si microwire arrays are a promising photocathode material because the high aspect-ratio electrode architecture allows for the use of low cost, earth-abundant materials without sacrificing energy-conversion efficiency, due to the orthogonalization of light absorption and charge-carrier collection. Additionally, the high surfacearea design of the rod-based semiconductor array inherently lowers the flux of charge carriers over the rod array surface relative to the projected geometric surface of the photoelectrode, thus lowering the photocurrent density at the solid/liquid junction and thereby relaxing the demands on the activity (and cost) of any electrocatalysts. Arrays of Si microwires grown using the Vapor Liquid Solid (VLS) mechanism have been shown to have desirable electronic light absorption properties. We have demonstrated that these arrays can be coated with earth-abundant metallic catalysts and used for photoelectrochemical production of hydrogen. This development is a step towards the demonstration of a complete artificial photosynthetic system, composed of only inexpensive, earth-abundant materials, that is simultaneously efficient, durable, and scalable

    pH-Independent, 520 mV Open-Circuit Voltages of Si/Methyl Viologen^(2+/+) Contacts Through Use of Radial n^+p-Si Junction Microwire Array Photoelectrodes

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    The effects of introducing an n^+-doped emitter layer have been evaluated for both planar Si photoelectrodes and for radial junction Si microwire-array photoelectrodes. In contact with the pH-independent, one-electron, outer-sphere, methyl viologen redox system (denoted MV^(2+/+)), both planar and wire array p-Si photoelectrodes yielded open-circuit voltages, V_(oc), that varied with the pH of the solution. The highest V_(oc) values were obtained at pH = 2.9, with V_(oc) = 0.53 V for planar p-Si electrodes and V_(oc) = 0.42 V for vapor−liquid−solid catalyzed p-Si microwire array samples, under 60 mW cm^(−2) of 808 nm illumination. Increases in the pH of the electrolyte produced a decrease in V_(oc) by approximately −44 mV/pH unit for planar electrodes, with similar trends observed for the Si microwire array electrodes. In contrast, introduction of a highly doped, n^+ emitter layer produced V_(oc) = 0.56 V for planar Si electrodes and V_(oc) = 0.52 V for Si microwire array electrodes, with the photoelectrode properties in each system being essentially independent of pH over six pH units (3 < pH < 9). Hence, formation of an n^+ emitter layer not only produced nearly identical photovoltages for planar and Si microwire array photoelectrodes, but decoupled the band energetics of the semiconductor (and hence the obtainable photovoltage) from the value of the redox potential of the solution. The formation of radial junctions on Si microwire arrays thus provides an approach to obtaining Si-based photoelectrodes with high-photovoltages that can be used for a variety of photoelectrochemical processes, including potentially the hydrogen evolution reaction, under various pH conditions, regardless of the intrinsic barrier height and flat-band properties of the Si/liquid contact

    10 ”m minority-carrier diffusion lengths in Si wires synthesized by Cu-catalyzed vapor-liquid-solid growth

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    The effective electron minority-carrier diffusion length, L_(n,eff), for 2.0 ”m diameter Si wires that were synthesized by Cu-catalyzed vapor-liquid-solid growth was measured by scanning photocurrent microscopy. In dark, ambient conditions, L_(n,eff) was limited by surface recombination to a value of ≀ 0.7 ”m. However, a value of L_(n,eff) = 10.5±1 ”m was measured under broad-area illumination in low-level injection. The relatively long minority-carrier diffusion length observed under illumination is consistent with an increased surface passivation resulting from filling of the surface states of the Si wires by photogenerated carriers. These relatively large L_(n,eff) values have important implications for the design of high-efficiency, radial-junction photovoltaic cells from arrays of Si wires synthesized by metal-catalyzed growth processes
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