Bulk plasmon-phonon polaritons in n-GaN

We studied theoretically and experimentally plasmon-phonon polaritons and longitudinal plasmon-phonon oscillations in n-GaN epitaxial layers. The studies were carried out on the epitaxial layers with various doping levels. Simulation of the reflectivity spectra and dispersion relations of plasmon-phonon polaritons was performed in a wide frequency range. Reflectivity spectra transformation associated with phonon damping and electron relaxation processes has been revealed. Experimental studies of the reflectivity spectra have been performed in the spectral range of 8-80 meV. The experimental spectra are well fitted by the simulated ones. Results of the study can be used for contactless determination of the electron concentration and mobility in GaN epitaxal layers.Peer reviewe

Development of a Numerical Method for Calculating a Gas Supply System during a Period of Change in Thermal Loads

Nowadays, modern gas supply systems are complex. They consist of gas distribution stations; high-, medium-, and low-pressure gas networks; gas installations; and control points. These systems are designed to provide natural gas to the population, including domestic, industrial, and agricultural consumers. This study is aimed at developing methods for improving the calculation of gas distribution networks. The gas supply system should ensure an uninterrupted and safe gas supply to consumers that is easy to operate and provides the possibility of shutting down its individual elements for preventive, repair, and emergency recovery work. Therefore, this study presents a mathematical calculation method to find the optimal operating conditions for any gas network during the period of seasonal changes in thermal loads. This method demonstrates how the reliability of gas distribution systems and resistance to non-standard critical loads are affected by consumers based on the time of year, month, and day, and external factors such as outdoor temperature. The results in this study show that this method will enable the implementation of tools for testing various management strategies for the gas distribution network

Excitation and decay of surface plasmon polaritons in n-GaN

We report on the studies of the surface plasmon polaritons in n-GaN epitaxial layers. The grating etched on the surface of the epitaxial layer is used to excite surface plasmon polaritons by means of terahertz photons. The experimental reflectivity spectrum for p-polarized radiation demonstrates a set of resonances associated with excitation of different surface plasmon polariton modes. Spectral peculiarities due to the diffraction effect have been also revealed. Emission of terahertz radiation is investigated under epilayer temperature modulation by electric current. The emissivity spectrum of the epitaxial layer with surface-relief grating shows peaks in the frequency ranges corresponding to the decay of the surface plasmon polariton modes. The characteristic features of the reflectivity and emissivity spectra are well described theoretically by a differential method with explicit integration scheme.Peer reviewe

Effects of an External Magnetic Field on the Interband and Intraband Optical Properties of an Asymmetric Biconvex Lens-Shaped Quantum Dot

The theoretical investigation of interband and intraband transitions in an asymmetric biconvex lens-shaped quantum dot are considered in the presence of an external magnetic field. The selection rules for intraband transitions are obtained. The behaviors of linear and nonlinear absorption and photoluminescence spectra are observed for different temperatures and magnetic field strengths. The second and third harmonic generation coefficients as a function of the photon energy are examined both in the absence and presence of an external magnetic field

Optical Performance of Two Dimensional Electron Gas and GaN:C Buffer Layers in AlGaN/AlN/GaN Heterostructures on SiC Substrate

Terahertz time-domain spectroscopy and Fourier-transform infrared spectroscopy were developed as the method for the investigation of high-frequency characteristics of two-dimensional electron gas and GaN:C buffer layers in AlGaN/AlN/GaN heterostructures grown on a semi-insulating SiC substrate. The reflectance and transmittance spectra of the selected heterostructure layers were studied after the top layers were removed by a reactive ion etching. Results were numerically analyzed using the transfer matrix method taking into account the high-frequency electron conductivity via a Drude model and complex dielectric permittivity of each epitaxial layer via a one-phonon-resonance approximation. Good agreement between the experiment and theory was achieved revealing the temperature dependent electron effective mass in AlGaN/AlN/GaN high electron mobility transistor structures and the small damping factors of optical phonons due to high crystal quality of the epitaxial layers fabricated on the SiC substrate