Comparison of one and two-stage growth approaches for close space sublimation deposition of Sb<inf>2</inf>Se<inf>3</inf> thin film solar cells

In this work, we investigate the impact of grain structure and ribbon orientation on Sb2Se3 solar cells deposited by close space sublimation (CSS). Films of Sb2Se3 were produced using either a single-stage low-temperature “seed-layer” deposition, a high-temperature “growth-layer” deposition, or a combined two-stage deposition process combining both “seed” and “growth” layers. This study demonstrates the essential nature of the “seed” layer to achieve the required substrate coverage and ensure functioning Sb2Se3 solar cells by this technique. A photovoltaic efficiency of 5.07 % was obtained by fabricating solar cells with a two-stage Sb2Se3 growth process using the structure (FTO/TiO2/Sb2Se3/P3HT/Au) in superstrate configuration. Comparisons were made between device performance and ribbon orientation assessed by XRD measurements via a ribbon carrier transport (RCT) analysis method, as well as with surface coverage and grain size. The addition of a second growth stage was found to result in a more vertical ribbon orientation compared to a single low temperature deposition, however predominantly controls the overall surface coverage. We observe no obvious links between the orientation of ribbons and the cell performance. Instead we propose that the performance, and in particular the device VOC, is more strongly determined by the overall grain structure rather than simply by the ribbon orientation

Multi-Phase Sputtered TiO2-Induced Current–Voltage Distortion in Sb2Se3 Solar Cells

Despite the recent success of CdS/Sb2Se3 heterojunction devices, cadmium toxicity, parasitic absorption from the relatively narrow CdS band gap (2.4 eV) and multiple reports of inter-diffusion at the interface forming Cd(S,Se) and Sb2(S,Se)3 phases, present significant limitations to this device architecture. Among the options for alternative partner layers in antimony chalcogenide solar cells, the wide band gap, non-toxic titanium dioxide (TiO2) has demonstrated the most promise. It is generally accepted that the anatase phase of the polymorphic TiO2 is preferred, although there is currently an absence of analysis with regard to phase influence on device performance. This work reports approaches to distinguish between TiO2 phases using both surface and bulk characterization methods. A device fabricated with a radio frequency (RF) magnetron sputtered rutile-TiO2 window layer (FTO/TiO2/Sb2Se3/P3HT/Au) achieved an efficiency of 6.88% and near-record short–circuit current density (Jsc) of 32.44 mA cm−2, which is comparable to established solution based TiO2 fabrication methods that produced a highly anatase-TiO2 partner layer and a 6.91% efficiency device. The sputtered method introduces reproducibility challenges via the enhancement of interfacial charge barriers in multi-phase TiO2 films with a rutile surface and anatase bulk. This is shown to introduce severe S-shaped current–voltage (J–V) distortion and a drastic fill–factor (FF reduction in these devices

Analysis of charge trapping and long lived hole generation in SrTiO₃ photoanodes

Charge carrier dynamics studies of SrTiO3 under applied bias offer the opportunity to gain unique insights into what underpins its state-of-the-art photocatalytic water splitting activity. Herein, time resolved spectroscopic measurements are employed, to investigate the impact of applied bias on the transient and steady state charge carrier dynamics of SrTiO3 across μs–s timescales, and simultaneously measure charge extraction kinetics. A high density of Ti3+ defect states in SrTiO3 photoanodes are identified and associated with prevalent electron trapping into deep states, which is in competition with electron extraction and limits the photocurrent. Despite the high density of trapped electrons, an intrinsically long lifetime for photogenerated holes in SrTiO3 photoanodes is observed using transient absorption spectroscopy, even in the absence of applied bias. This is important for overcoming the slow kinetics and hole accumulation associated with the water oxidation reaction, and for enabling good performance in photocatalytic systems where bias cannot be applied

GeSe: Optical Spectroscopy and Theoretical Study of a van der Waals Solar Absorber

The van der Waals material GeSe is a potential solar absorber, but its optoelectronic properties are not yet fully understood. Here, through a combined theoretical and experimental approach, the optoelectronic and structural properties of GeSe are determined. A fundamental absorption onset of 1.30 eV is found at room temperature, close to the optimum value according to the Shockley–Queisser detailed balance limit, in contrast to previous reports of an indirect fundamental transition of 1.10 eV. The measured absorption spectra and first-principles joint density of states are mutually consistent, both exhibiting an additional distinct onset ∼0.3 eV above the fundamental absorption edge. The band gap values obtained from first-principles calculations converge, as the level of theory and corresponding computational cost increases, to 1.33 eV from the quasiparticle self-consistent GW method, including the solution to the Bethe–Salpeter equation. This agrees with the 0 K value determined from temperature-dependent optical absorption measurements. Relaxed structures based on hybrid functionals reveal a direct fundamental transition in contrast to previous reports. The optoelectronic properties of GeSe are resolved with the system described as a direct semiconductor with a 1.30 eV room temperature band gap. The high level of agreement between experiment and theory encourages the application of this computational methodology to other van der Waals materials