Microstrip Bandpass Filter with Reconfigurable Notch Response at 5.2 GHz using Defected Microstrip Structure

An investigation of a new design of short circuit stub wideband bandpass filter integrated with reconfigurable notch characteristic is presented. The wideband bandpass filter was designed from a quarter-wavelength short circuit stub with folded topology in order to reduce overall physical dimension. The U-shaped DMS was designed on a microstrip line by defecting the bandpass filter. The reconfigurable characteristic was then realized by introducing PIN diode (BAP 64-02) as a switching element that is placed on top of the U-shaped DMS. When the diode was OFF, it produced a wideband bandpass response from 3.0 GHz to 6.0 GHz. On the other hand, when the PIN diode was ON, a sharp rejection of notch response at 5.2 GHz with a very low passband transmission coefficient was finally demonstrated. This type of filter is very useful in radar and wireless communication systems

Switchable Absorptive Bandstop to Bandpass Filter using Stepped-Impedance Dual Mode Resonator

In this paper, a new switchable absorptive bandstop to bandpass filter using stepped-impedance dual mode resonator is proposed. This switchable filter provides two modes of operation which is absorptive bandstop and bandpass response. The first part of this paper presents a theoretical analysis of the absorptive bandstop filter using steppedimpedance dual mode resonator. The absorptive bandstop response can be achieved by connecting λ/4 length with the stepped-impedance dual mode resonator with correct diameter and position of via hole as an inductive element. The second part of this paper presents an investigation and design of the switchable absorptive bandstop to bandpass filter. PIN diodes are used as the switching element. The selectivity of the bandpass response can be improved by using extended via hole. The parametric studies together with the EM simulation of the new switchable absorptive bandstop to the dual mode bandpass filter is presented in this paper

A Study of Different Substrate Material on Air Gap Radial Line Slot Array (RLSA) Antenna at 28 GHz

This paper compared the performance of the conventional Radial line slot array (RLSA) antenna structure. Two different substrates of RLSA antennas were used: The FR4 with the relative permittivity (εr) value of 4.5 and the Duroid/RT5880 with the relative permittivity (εr) value of 2.2. Both substrates had their own thickness, where the Rogers RT Duroid 5880 was thinner with the value of 0.254 mm compared to FR4 which was 1.600 mm. There were two antenna cavities, which were the FR4 hybrid with air gap and the Duroid/RT5880 hybrid with air gap. Based on different substrate, this RLSA antenna was simulated using the CST Microwave Studio simulation software and measured using the Vector Network Analyzer (VNA) equipment that can measure the frequency range (10.0 MHz to 50.0 GHz). Moreover, this RLSA antenna was presented, experimented and measured for millimeter wave frequency, which is within the frequency range (24.0 GHz to 32.0 GHz). In the middle of the rectangular, slots on radiating plate, located with fed coated of 50 Ω SSMA connector as a coaxial to waveguide transition frequency reconfigurable millimeter-wave antenna for 5G networks is presented. The results of the simulation and measurement of this RLSA antenna with different substrates show the S11 and wider value of impedance bandwidth performance in millimeter wave frequency