Scaling Properties of Ge-SixGe1-x Core-Shell Nanowire Field Effect Transistors

We demonstrate the fabrication of high-performance Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain, and systematically investigate their scaling properties. Highly doped source and drain regions are realized by low energy boron implantation, which enables efficient carrier injection with a contact resistance much lower than the nanowire resistance. We extract key device parameters, such as intrinsic channel resistance, carrier mobility, effective channel length, and external contact resistance, as well as benchmark the device switching speed and ON/OFF current ratio.Comment: 5 pages, 4 figures. IEEE Transactions on Electron Devices (in press

Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric

We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility values of over 8,000 cm2/Vs at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering, and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value.Comment: 3 pages, 3 figures; to appear in Appl. Phys. Let

High-Performance Air-Stable n-Type Carbon Nanotube Transistors with Erbium Contacts

O ver the past few decades, the continued down-scaling of the physical dimensions of silicon field-effect transistors (FETs) has been the main drive for achieving higher device density while improving the transistor performance in complementary metalÀoxideÀ semiconductor (CMOS) circuits. One of the principle benefits of the conventional scaling trend, namely, reducing the power consumption per computation, has diminished in recent years. In particular, power management is increasingly becoming a major challenge because of the inability to further decrease the operating voltage without compromising the performance of silicon FETs. Incorporation of alternative channel materials with superior carrier transport properties, as presently conceived, is a favorable strategy for the semiconductor industry to complement or replace silicon FETs. Among the promising candidates, carbon nanotubes (CNTs) are predicted to offer the most energy-efficient solution for computation compared with other channel materials, 1 owing to their unique properties such as ultrathin body and ballistic carrier transport in the channel. ABSTRACT So far, realization of reproducible n-type carbon nanotube (CNT) transistors suitable for integrated digital applications has been a difficult task. In this work, hundreds of n-type CNT transistors from three different low work function metals ; erbium, lanthanum, and yttrium ; are studied and benchmarked against p-type devices with palladium contacts. The crucial role of metal type and deposition conditions is elucidated with respect to overall yield and performance of the n-type devices. It is found that high oxidation rates and sensitivity to deposition conditions are the major causes for the lower yield and large variation in performance of n-type CNT devices with low work function metal contacts. Considerable improvement in device yield is attained using erbium contacts evaporated at high deposition rates. Furthermore, the air-stability of our n-type transistors is studied in light of the extreme sensitivity of these metals to oxidation

The study of contact properties in edge-contacted graphene-aluminum Josephson junctions

Transparent contact interfaces in superconductor-graphene hybrid systems are critical for realizing superconducting quantum applications. Here, we examine the effect of the edge-contact fabrication process on the transparency of the superconducting aluminum-graphene junction. We show significant improvement in the transparency of our superconductor-graphene junctions by promoting the chemical component of the edge contact etch process. Our results compare favorably with state-of-the-art graphene Josephson junctions. The findings of our study contribute to advancing the fabrication knowledge of edge-contacted superconductor-graphene junctions

Optical identification using imperfections in 2D materials

The ability to uniquely identify an object or device is important for authentication [1]. Imperfections, locked into structures during fabrication, can be used to provide a fingerprint that is challenging to reproduce. In this paper, we propose a simple optical technique to read unique information from nanometer-scale defects in 2D materials. Imperfections created during crystal growth or fabrication lead to spatial variations in the bandgap of 2D materials that can be characterized through photoluminescence measurements. We show a simple setup involving an angle- adjustable transmission filter, simple optics and a CCD camera can capture spatially- dependent photoluminescence to produce complex maps of unique information from 2D monolayers. Atomic force microscopy is used to verify the origin of the optical signature measured, demonstrating that it results from nanometer-scale imperfections. This solution to optical identification with 2D materials could be employed as a robust security measure to prevent counterfeiting