TRANSFER OF ELECTRIC POWER IN HETERO-STRUCTURE n-GaAs−p-(GaAs)1−x(ZnSe)x(0 ≤ x ≤ 0.80)

Epitaxial layers of stable hard mixture of (GaAs)1-x(ZnSe)x of p–type condition and nGaAs sublayers were grown up by using method of liquid-phase epitaxy from limited volume of basic mixture. Characteristics of VAC hetero-structures n-GaAs–p-(GaAs)1-x(ZnSe)x (0x 0.80). Basing on double-model of ingection for n-p-p+- structures under condition of minimal spread of concentration of unstable bases, it is possible to explain experimentally the whole period of VAC for hetero-structures n-GaAs–p-(GaAs)1-x(ZnSe)x (0 x 0.80)

TRANSFER OF ELECTRIC POWER IN HETERO-STRUCTURE n-GaAs−p-(GaAs)1−x(ZnSe)x(0 ≤ x ≤ 0.80)

Epitaxial layers of stable hard mixture of (GaAs)1-x(ZnSe)x of p–type condition and nGaAs sublayers were grown up by using method of liquid-phase epitaxy from limited volume of basic mixture. Characteristics of VAC hetero-structures n-GaAs–p-(GaAs)1-x(ZnSe)x (0x 0.80). Basing on double-model of ingection for n-p-p+- structures under condition of minimal spread of concentration of unstable bases, it is possible to explain experimentally the whole period of VAC for hetero-structures n-GaAs–p-(GaAs)1-x(ZnSe)x (0 x 0.80)

TRANSFER OF ELECTRIC POWER IN HETERO-STRUCTURE n-GaAs−p-(GaAs)1−x(ZnSe)x(0 ≤ x ≤ 0.80)

Epitaxial layers of stable hard mixture of (GaAs)1-x(ZnSe)x of p–type condition and nGaAs sublayers were grown up by using method of liquid-phase epitaxy from limited volume of basic mixture. Characteristics of VAC hetero-structures n-GaAs–p-(GaAs)1-x(ZnSe)x (0x 0.80). Basing on double-model of ingection for n-p-p+- structures under condition of minimal spread of concentration of unstable bases, it is possible to explain experimentally the whole period of VAC for hetero-structures n-GaAs–p-(GaAs)1-x(ZnSe)x (0 x 0.80)

Growing and Studying The Photoelectric and Electrical Properties of Epitaxial Films of Ge1-X Snx Solid Solutions

Monocrystal films of the Ge1-xSnx solid solution (