Application of reactors for testing neutron-induced upsets in commercial SRAMs

Reactor neutron environments can be used to test/screen the sensitivity of unhardened commercial SRAMs to low-LET neutron-induced upset. Tests indicate both thermal/epithermal (< 1 keV) and fast neutrons can cause upsets in unhardened parts. Measured upset rates in reactor environments can be used to model the upset rate for arbitrary neutron spectra

Monte Carlo Exploration of Neutron-Induced SEU-Sensitive Volumes in SRAMs

International audienceA Monte Carlo approach is used to obtain statistical information on the effect of the spatial distribution of the numerous secondary ions involved in neutron induced soft error rates (SER). The sorting criteria for the occurrence of upset are derived from a simplification of previous work on full-cell three-dimensional (3-D) SRAM device simulation. The time thus saved allows the treatment of a wide variety of track conditions. The shape and extension of the sensitive region is explored and correlated to the secondary ion properties. Details on the variations of the sensitivity with depth into the sensitive region as well as on the geometrical conditions associated with those tracks that cause upsets are given

Comparison of NMOS and PMOS transistor sensitivity to SEU in SRAMs studied by device simulation

International audienc

Study of an SOI SRAM sensitivity to SEU by 3-D device Simulation

International audienceSilicon on insulator static random-access memory cell sensitivity to single event upset is studied. Currents and sensitive regions are then considered. Because of the buried oxide, the main part of these results appears to be different to that for bulk technologies

Comparison of nmos and pmos transistor sensitivity to seu in srams by device simulation

International audienc

Study of a SOI SRAM Sensitivity to SEU by 3-D Device Simulation

International audienc

Effects of particle energy on proton-induced single-event latchup

International audienc