1 research outputs found
Phase Transition and Microstructural Changes of Sol–Gel Derived ZrO<sub>2</sub>/Si Films by Thermal Annealing: Possible Stability of Tetragonal Phase without Transition to Monoclinic Phase
Stabilization of high-temperature phases such as tetragonal
(<i>t</i>-) or cubic phases has been a pivotal issue for
technological
applications of polymorphic ZrO<sub>2</sub>. In this work, we fabricated
ZrO<sub>2</sub>/Si films using a sol–gel deposition route and
investigated the phase transformation, microstructural evolution,
surface morphological changes, and interfacial chemical structures
by thermal annealing. The ZrO<sub>2</sub> precursor solution was prepared
using a zirconium acetylacetonate, coated, dried on Si substrates,
and finally annealed at 300–950 °C in ambient air. The
sol–gel-derived ZrO<sub>2</sub> layer crystallized into the <i>t</i>-phase as the annealing temperature increased. Despite
high-temperature annealing, the <i>t</i>-phase was stabilized
without a noticeable transition to the monoclinic phase, probably
because of the relatively low film thickness (∼15 nm), enlarged
surface/interface area due to thermal grooving, and strain effects.
The probable <i>t</i>(112) orientation was developed after
annealing at ≥800 °C, which could be related to minimization
of the sum of the surface, interface, and strain energies. High-temperature
thermal annealing resulted in the contraction of the ZrO<sub>2</sub> layer as a result of the pyrolysis of the remnant organics, surface
roughening by thermal grooving, and thickening of the amorphous interface
layer (predominantly SiO<sub><i>x</i></sub>) between the
ZrO<sub>2</sub> and Si