1 research outputs found
High-Output Lead-Free Flexible Piezoelectric Generator Using Single-Crystalline GaN Thin Film
Piezoelectric generators (PEGs) are
a promising power source for future self-powered electronics by converting
ubiquitous ambient mechanical energy into electricity. However, most
of the high-output PEGs are made from lead zirconate titanate, in
which the hazardous lead could be a potential risk to both humans
and environment, limiting their real applications. III-Nitride (III-N)
can be a potential candidate to make stable, safe, and efficient PEGs
due to its high chemical stability and piezoelectricity. Also, PEGs
are preferred to be flexible rather than rigid, to better harvest
the low-magnitude mechanical energy. Herein, a high-output, lead-free,
and flexible PEG (F-PEG) is made from GaN thin film by transferring
a single-crystalline epitaxial layer from silicon substrate to a flexible
substrate. The output voltage, current density, and power density
can reach 28 V, 1 μA·cm<sup>–2</sup>, and 6 μW·cm<sup>–2</sup>, respectively, by bending the F-PEG. The generated
electric power by human finger bending is high enough to light commercial
visible light-emitting diodes and charge commercial capacitors. The
output performance is maintained higher than 95% of its original value
after 10 000-cycle test. This highly stable, high-output, and
lead-free GaN thin-film F-PEG has the great potential for future self-powered
electronic devices and systems