The use of fuzzy real option valuation method to rank Giga Investment Projects on Iran's natural gas reserves

Giga investments are exposed to numerous systematic and unsystematic (or specific) risks that significantly influence their feasibility and value. In addition to the conventional issues and complexities in evaluating investment projects, factors such as long construction time, high amount of capital required and irreversibility of investment, increase uncertainty of cash flows in these types of projects. As a consequence, decision makers are usually not satisfied with the results of the most popular valuation methodology – discounted cash flow analysis – in valuation of Giga investments. The most promising methodology of valuing flexibility in such investment projects is the real options valuation which quantifies the value of embedded flexibilities through option pricing techniques.In this paper, fuzzy real options valuation techniques are used to rank Giga project proposals faced in Iran's gas industry. To this end, different scenarios of project payoff and future uncertainties are quantified, using fuzzy numbers based on findings from earlier real option valuation methods.Keywords: Giga Investment, Fuzzy Pay Off, Real options valuation, Natural Gas, Ira

Probing ultrafast carrier dynamics and nonlinear absorption and refraction in core-shell silicon nanowires

We investigate the relaxation dynamics of photogenerated carriers in silicon nanowires consisting of a crystalline core and a surrounding amorphous shell, using femtosecond time-resolved differential reflectivity and transmission spectroscopy at photon energies of 3.15 eV and 1.57 eV. The complex behavior of the differential transmission and reflectivity transients is the mixed contributions from the crystalline core and the amorphous silicon on the nanowire surface and the substrate where competing effects of state filling and photoinduced absorption govern the carrier dynamics. Faster relaxation rates are observed on increasing the photo-generated carrier density. Independent experimental results on crystalline silicon-on-sapphire help us in separating the contributions from the carrier dynamics in crystalline core and the amorphous regions in the nanowire samples. Further, single beam z-scan nonlinear transmission experiments at 1.57 eV in both open and close aperture configurations yield two-photon absorption coefficient \$beta$ (~3 cm/GW) and nonlinear refraction coefficient \$gamma$ (-2.5x10^-4 cm2/GW).Comment: 6 pages, 6 figure

An ultrathin rechargeable solid-state zinc ion fiber battery for electronic textiles.

Electronic textiles (e-textiles), having the capability of interacting with the human body and surroundings, are changing our everyday life in fundamental and meaningful ways. Yet, the expansion of the field of e-textiles is still limited by the lack of stable and biocompatible power sources with aesthetic designs. Here, we report a rechargeable solid-state Zn/MnO2 fiber battery with stable cyclic performance exceeding 500 hours while maintaining 98.0% capacity after more than 1000 charging/recharging cycles. The mechanism of the high electrical and mechanical performance due to the graphene oxide–embedded polyvinyl alcohol hydrogel electrolytes was rationalized by Monte Carlo simulation and finite element analysis. With a collection of key features including thin, light weight, economic, and biocompatible as well as high energy density, the Zn/MnO2 fiber battery could seamlessly be integrated into a multifunctional on-body e-textile, which provides a stable power unit for continuous and simultaneous heart rate, temperature, humidity, and altitude monitoring

A-Si amoled display backplanes on flexible substrates

In view of its maturity and low-cost, the amorphous silicon (a-Si) technology is an attractive candidate for active matrix organic light emitting diode (AMOLED) display backplanes on flexible substrates. However, the a-Si material comes with significant intrinsic shortcomings related to speed (mobility) and stability of operation, requiring novel threshold-voltage-shift (δVT) compensated thin-film transistor (TFT) pixel circuits and architectures to enable stable OLED operation. But given the dramatic progress in efficiency of OLED materials over recent years, the drive current requirement has been significantly lowered, thus relaxing the constraints on a-Si TFTs. For compatibility to plastic substrates, the a-Si TFT process temperature must be reduced from the conventional 300°C to ∼150°C or below, which tends to compromise the integrity of thin-film materials and device performance. Hence, optimizing the TFT process for high device performance with limited thermal budget is a necessary step towards flexible AMOLEDs with a-Si backplanes. This paper reviews the design and process challenges, and specifically examines the performance of TFTs and δVT- compensated integrated pixel driver circuits on plastic substrates with respect to current driving ability and long term stability. More importantly, lifetime tests of circuit degradation behaviour over extended time periods demonstrate highly stable drive currents and its ability to meet commercial standards