High frequency electric field induced nonlinear effects in graphene

The nonlinear optical and optoelectronic properties of graphene with the emphasis on the processes of harmonic generation, frequency mixing, photon drag and photogalvanic effects as well as generation of photocurrents due to coherent interference effects, are reviewed. The article presents the state-of-the-art of this subject, including both recent advances and well-established results. Various physical mechanisms controlling transport are described in depth including phenomenological description based on symmetry arguments, models visualizing physics of nonlinear responses, and microscopic theory of individual effects

Cyclotron resonance photoconductivity of a two-dimensional electron gas in HgTe quantum wells

Far-infrared cyclotron resonance photoconductivity (CRP) is investigated in HgTe quantum wells (QWs) of various widths grown on (013) oriented GaAs substrates. It is shown that CRP is caused by the heating of two-dimensional electron gas (2DEG). From the resonance magnetic field strength effective masses and their dependence on the carrier concentration is obtained. We found that the effective mass in each sample slightly increases from the value (0.0260 \pm 0.0005)m_0 at N_s = 2.2x10^11 cm^(-2) to (0.0335 \pm 0.0005)m_0 at N_s = 9.6x10^11 cm^(-2). Compared to determination of effective masses by the temperature dependence of magnitudes of the Shubnikov-de Haas (SdH) oscillations used so far in this material our measurements demonstrate that the CRP provides a more accurate (about few percents) tool. Combining optical methods with transport measurements we found that the transport time substantially exceeds the cyclotron resonance lifetime as well as the quantum lifetime which is the shortest.Comment: 3 pages, 2 figure

Interplay of Rashba/Dresselhaus spin splittings probed by photogalvanic spectroscopy –A review

The paper reviews the interplay of Rashba/Dresselhaus spin splittings in various two-dimensional systems made of zinc-blende III–V, wurtzite, and SiGe semiconductors. We discuss the symmetry aspects of the linear and cubic in electron wavevector spin splitting in heterostructures prepared on (001)-, (110)-, (111)-, (113)-, (112)-, and (013)- oriented substrates and address the requirements for suppression of spin relaxation and realization of the persistent spin helix state. In experimental part of the paper, we overview experimental results on the interplay of Rashba/Dresselhaus spin splittings probed by photogalvanic spectroscopy: The method based on the phenomenological equivalence of the linear-in-wavevector spin splitting and several photogalvanic phenomena

Visible light emission due to resonant CO_{2} excitation of dental hard tissue

Visible light emission of dental hard substances excited by high-power infrared pulses of a tunable TEA CO2 laser has been investigated. A clear correlation between observed visible light emission, plasma formation as well as ablation of dental hard tissue has been demonstrated. Both, the highly nonlinear infrared to visible upconversion process and the ablation efficiency show a sharp spectral resonance close to a vibrational mode of PO4 at 1090 cm-1 in dental enamel and dentin. The influence of strong infrared light impulses on dental hard tissue is examined by performing upconversion studies of visible light emission of human dental enamel and dentin. Our experimental setup allows one to determine the plasma formation threshold being important in dental surgery

Near-field induced FIR Josephson-detection by x-axis-oriented YBa_{2}Cu_{3}O_{7-d} -films

A novel approach to intrinsic Josephson-detection of far infrared radiation is reported utilizing near-zone field effects at electric contacts on c-axis oriented YBa2Cu3O7- films. While only a bolometric signal was observed focusing the radiation far off the contacts on c-axis normal films, irradiating the edge of contacts yielded an almost wavelength independent fast signal showing the characteristic intensity dependence of Josephson-detection. The signal is attributed to a c-axis parallel component of the electric radiation field being generated in the near-zone field of diffraction at the metallic contact structures

Terahertz Electric Field Driven Electric Currents and Ratchet Effects

Terahertz field induced photocurrents in graphene were studied experimentally and by microscopic modeling. Currents were generated by cw and pulsed laser radiation in large area as well as small-size exfoliated graphene samples. We review general symmetry considerations leading to photocurrents depending on linear and circular polarized radiation and then present a number of situations where photocurrents were detected. Starting with the photon drag effect under oblique incidence, we proceed to the photogalvanic effect enhancement in the reststrahlen band of SiC and edge-generated currents in graphene. Ratchet effects were considered for in-plane magnetic fields and a structure inversion asymmetry as well as for graphene with non-symmetric patterned top gates. Lastly, we demonstrate that graphene can be used as a fast, broadband detector of terahertz radiation

High intensity study of THz detectors based on field effect transistors

Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect transistors and InGaAs high electron mobility transistors. The photoresponse increased linearly with increasing radiation power up to kW/cm^2 range. The saturation of the photoresponse was observed for all investigated field effect transistors for intensities above several kW/cm^2. The observed signal saturation is explained by drain photocurrent saturation similar to saturation in direct currents output characteristics. The theoretical model of terahertz field effect transistor photoresponse at high intensity was developed. The model explains quantitatively experimental data both in linear and nonlinear (saturation) range. Our results show that dynamic range of field effect transistors is very high and can extend over more than six orderd of magnitudes of power densities (from 0.5 mW/cm^2 to 5 kW/cm^2)

Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies

A circularly polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate the Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in the Faraday geometry. Structures with different thicknesses of the QW barriers have been studied in the magnetic field parallel and tilted with respect to the sample normal. The effective electron-hole g-factor has been found by measurement of splitting of polarized magneto-PL lines. Lande factors of electrons have been calculated using the 14-band k.p method, and the g-factor of holes was determined by subtracting the calculated contribution of the electrons from the effective electron-hole g-factor. Anisotropy of the hole g-factor has been studied applying the tilted magnetic field. Published by AIP Publishing