Analytical technique for determining the polarization dependence of optical matrix elements in quantum wires with band-coupling effects

We present an analytical technique for determining polarization-dependent optical transition matrix elements in quantum wires which rigorously incorporates the effects of band coupling. Using this technique, we examine the polarization anisotropy of the two lowest energy optical transitions in a GaAs quantum wire. Contrary to assumptions employed in previous studies, we show that the valence states involved in these transitions are a strong admixture of light and heavy hole character. The lowest energy transition is found to be four times stronger for electric fields oriented parallel to the wire than for the perpendicular orientation. In contrast, the next highest transition does not interact with optical waves polarized along the wire axis. We discuss sources of error which arise in simpler one-band models of this phenomenon in addition to the neglect of band coupling and show that the coupled band model presented here is essential for predicting these effects

Quantitative measurement of the composition of Al_xGa_(1−x)As heterostructures using a simple backscattered electron detector

We describe a technique for the quantitative measurement of composition in Al_xGa_(1−x)As heterostructures using a simple solid‐state backscattered electron detector in a scanning electron microscope. Calibration data are presented and are shown to be consistent with the Castaing [Adv. Electron. Electron Phys. 13, 317 (1960)] theory. The technique is applied to image representative Al_xGa_(1−x)As heterostructures including a graded index separate confinement heterostructure (GRINSCH) laser structure

Nanometer scale wire structures fabricated by diffusion-induced selective disordering of a GaAs(AlGaAs) quantum well

A shallow zinc diffusion technique is used to selectively disorder a GaAs quantum well creating nanometer scale wire structures. Spectrally resolved cathodoluminescence images of the structures are presented as well as local spectra of cathodoluminescence emission from the structures. Blue shifting of the luminescence from the wire structures is observed

The ballistic Mars hopper: An alternative Mars mobility concept

The ballistic Mars hopper is proposed as an alternative mobility concept for unmanned exploration of the martian surface. In the ballistic Mars hopper concept, oxygen and carbon monoxide produced from the martian atmosphere are used as propellants in a rocket propulsion system for an unmanned vehicle on suborbital trajectories between landing sights separated by distances of up to 1000 km. This mobility concept is seen as uniquely capable of allowing both intensive and extensive exploration of the planet using only a single landed vehicle massing approximately 2000 kg. The technical challenges associated with In-Situ Propellant Production (ISPP) on the surface of Mars are reviewed. A rocket propulsion subsystem capable of using oxygen and carbon monoxide as propellants is described. Finally, results of mission analysis and a hopper landing hazard simulation are reported. It is concluded that an attractive Mars hopper can be developed based on relatively near-term technology

A novel technique for the direct determination of carrier diffusion lengths in GaAs/AlGaAs heterostructures using cathodoluminescence

A new technique for determining carrier diffusion lengths in direct gap semiconductors by cathodoluminescence measurement is presented. Ambipolar diffusion lengths are determined for GaAs quantum well material, bulk GaAs, and Al_xGa_(1-x)As with x up to 0.38. A large increase in the diffusion length is found as x approaches 0.38 and is attributed to an order of magnitude increase in lifetime

Nanometer-scale GaAs clusters from organometallic precursors

We report the synthesis of crystalline nanometer-scale GaAs clusters by homogeneous vapor-phase nucleation from organometallic precursors. Cluster synthesis is performed in a hot wall organometallic vapor-phase epitaxy reactor at atmospheric pressure. High resolution transmission electron microscopy studies reveal that the aerosol produced is composed of highly faceted single crystal GaAs particles in the 10–20 nm range. The influence of growth temperature and reactant concentration on cluster morphology is discussed

Vapor phase synthesis of crystalline nanometer-scale GaAs clusters

We report the synthesis of crystalline nanometer-scale GaAs clusters in the 5-10 nm size regime. The clusters are formed by the homogeneous nucleation of a nonequilibrium vapor created by the explosive vaporization of a bulk GaAs sample in an inert atmosphere. High resolution electron microscopy and diffraction show that the clusters have zincblende crystal structure and are faceted. Optical measurements on the particles are suggestive of quantum confinement effects

Direct determination of the ambipolar diffusion length in GaAs/AlGaAs heterostructures by cathodoluminescence

A new technique for determining carrier diffusion lengths by cathodoluminescence measurements is presented. The technique is extremely accurate and can be applied to a variety of structures. Ambipolar diffusion lengths are determined for GaAs quantum well material, bulk GaAs, Al0.21Ga0.79As, and Al0.37Ga0.63As. A large increase in the diffusion length is found for Al0.37Ga0.63As and is attributed to an order of magnitude increase in lifetime