8 research outputs found

    Diagram of the composition of patients in this study.

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    <p>Abbreviations: aNHL, aggressive non-Hodgkin lymphoma; CR1, complete remission after frontline chemotherapy; CT, computed tomography.</p

    Kaplan-Meier curves of overall survival and post-relapse survival in relapsed aNHL patients after achieving complete remission with frontline chemotherapy.

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    <p>(A) Overall survival in 171 patients who relapsed after achieving complete remission with frontline therapy. (B) Overall survival according to relapse detection method. (C) Post-relapse survival according to relapse detection method. (D) Post-relapse survival according to interval of surveillance computed tomography (CT) scan. Group 1: Relapse detected by a method other than CT (symptoms, physical examination, or blood tests). Group 2: Relapse detected by surveillance CT.</p

    Kaplan-Meier curves of post-relapse survival in relapsed aNHL patients after achieving complete remission with salvage chemotherapy.

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    <p>Post-relapse survival according to (A) relapse detection method and (B) surveillance CT interval among patients who relapsed after achieving complete remission with salvage therapy. Group 1: Relapse detected by a method other than CT (symptoms, physical examination, or blood tests). Group 2: Relapse detected by surveillance CT.</p

    Subgroup analysis of post-relapse survival according to relapse detection method in relapsed aNHL patients after CR1.

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    <p>*PTCL includes peripheral T-cell lymphoma not otherwise specified, angioimmunoblastic T-cell lymphoma, anaplastic large cell lymphoma, and NK/T cell lymphoma. Abbreviations: CR1, complete remission after frontline chemotherapy; CI, confidence interval; DLBCL, diffuse large B-cell lymphoma; PTCL, peripheral T-cell lymphoma; LDH, lactate dehydrogenase; IPI, International Prognostic Index; UNL, upper normal limit; CR, complete remission; PR, partial remission; HDT/ASCR, high-dose therapy with autologous stem cell rescue.</p

    Effect of Al<sub>2</sub>O<sub>3</sub> Deposition on Performance of Top-Gated Monolayer MoS<sub>2</sub>‑Based Field Effect Transistor

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    Deposition of high-<i>k</i> dielectrics on two-dimensional MoS<sub>2</sub> is an important process for successful application of the transition-metal dichalcogenides in electronic devices. Here, we show the effect of H<sub>2</sub>O reactant exposure on monolayer (1L) MoS<sub>2</sub> during atomic layer deposition (ALD) of Al<sub>2</sub>O<sub>3</sub>. The results showed that the ALD-Al<sub>2</sub>O<sub>3</sub> caused degradation of the performance of 1L MoS<sub>2</sub> field effect transistors (FETs) owing to the formation of Mo–O bonding and trapping of H<sub>2</sub>O molecules at the Al<sub>2</sub>O<sub>3</sub>/MoS<sub>2</sub> interface. Furthermore, we demonstrated that reduced duration of exposure to H<sub>2</sub>O reactant and postdeposition annealing were essential to the enhancement of the performance of top-gated 1L MoS<sub>2</sub> FETs. The mobility and on/off current ratios were increased by factors of approximately 40 and 10<sup>3</sup>, respectively, with reduced duration of exposure to H<sub>2</sub>O reactant and with postdeposition annealing
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