17,778 research outputs found

    Metallic characteristics in superlattices composed of insulators, NdMnO3/SrMnO3/LaMnO3

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    We report on the electronic properties of superlattices composed of three different antiferromagnetic insulators, NdMnO3/SrMnO3/LaMnO3 grown on SrTiO3 substrates. Photoemission spectra obtained by tuning the x-ray energy at the Mn 2p -> 3d edge show a Fermi cut-off, indicating metallic behavior mainly originating from Mn e_g electrons. Furthermore, the density of states near the Fermi energy and the magnetization obey a similar temperature dependence, suggesting a correlation between the spin and charge degrees of freedom at the interfaces of these oxides

    20 K superconductivity in heavily electron doped surface layer of FeSe bulk crystal

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    A superconducting transition temperature Tc as high as 100 K was recently discovered in 1 monolayer (1ML) FeSe grown on SrTiO3 (STO). The discovery immediately ignited efforts to identify the mechanism for the dramatically enhanced Tc from its bulk value of 7 K. Currently, there are two main views on the origin of the enhanced Tc; in the first view, the enhancement comes from an interfacial effect while in the other it is from excess electrons with strong correlation strength. The issue is controversial and there are evidences that support each view. Finding the origin of the Tc enhancement could be the key to achieving even higher Tc and to identifying the microscopic mechanism for the superconductivity in iron-based materials. Here, we report the observation of 20 K superconductivity in the electron doped surface layer of FeSe. The electronic state of the surface layer possesses all the key spectroscopic aspects of the 1ML FeSe on STO. Without any interface effect, the surface layer state is found to have a moderate Tc of 20 K with a smaller gap opening of 4 meV. Our results clearly show that excess electrons with strong correlation strength alone cannot induce the maximum Tc, which in turn strongly suggests need for an interfacial effect to reach the enhanced Tc found in 1ML FeSe/STO.Comment: 5 pages, 4 figure

    Tuning electronic structures via epitaxial strain in Sr2IrO4 thin films

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    We have synthesized epitaxial Sr2IrO4 thin-films on various substrates and studied their electronic structures as a function of lattice-strains. Under tensile (compressive) strains, increased (decreased) Ir-O-Ir bond-angles are expected to result in increased (decreased) electronic bandwidths. However, we have observed that the two optical absorption peaks near 0.5 eV and 1.0 eV are shifted to higher (lower) energies under tensile (compressive) strains, indicating that the electronic-correlation energy is also affected by in-plane lattice-strains. The effective tuning of electronic structures under lattice-modification provides an important insight into the physics driven by the coexisting strong spin-orbit coupling and electronic correlation.Comment: 9 pages, 5 figures, 1 tabl

    Signatures of Electronic Correlations in Optical Properties of LaFeAsO1x_{1-x}Fx_x

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    Spectroscopic ellipsometry is used to determine the dielectric function of the superconducting LaFeAsO0.9_{0.9}F0.1_{0.1} (TcT_c = 27 K) and undoped LaFeAsO polycrystalline samples in the wide range 0.01-6.5 eV at temperatures 10 T\leq T \leq 350 K. The free charge carrier response in both samples is heavily damped with the effective carrier density as low as 0.040±\pm0.005 electrons per unit cell. The spectral weight transfer in the undoped LaFeAsO associated with opening of the pseudogap at about 0.65 eV is restricted at energies below 2 eV. The spectra of superconducting LaFeAsO0.9_{0.9}F0.1_{0.1} reveal a significant transfer of the spectral weight to a broad optical band above 4 eV with increasing temperature. Our data may imply that the electronic states near the Fermi surface are strongly renormalized due to electron-phonon and/or electron-electron interactions.Comment: 4 pages, 4 figures, units in Fig.2 adde

    Quasiparticle Interference on the Surface of Topological Crystalline Insulator Pb(1-x)Sn(x)Se

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    Topological crystalline insulators represent a novel topological phase of matter in which the surface states are protected by discrete point group-symmetries of the underlying lattice. Rock-salt lead-tin-selenide alloy is one possible realization of this phase which undergoes a topological phase transition upon changing the lead content. We used scanning tunneling microscopy (STM) and angle resolved photoemission spectroscopy (ARPES) to probe the surface states on (001) Pb1x_{1-x}Snx_{x}Se in the topologically non-trivial (x=0.23) and topologically trivial (x=0) phases. We observed quasiparticle interference with STM on the surface of the topological crystalline insulator and demonstrated that the measured interference can be understood from ARPES studies and a simple band structure model. Furthermore, our findings support the fact that Pb0.77_{0.77}Sn0.23_{0.23}Se and PbSe have different topological nature.Comment: 5 pages, 4 figure
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