Association between visceral obesity and 10-year risk of first atherosclerotic cardiovascular diseases events among American adults: National Health and Nutrition Examination Survey

BackgroundIn the United States, the relationship between visceral obesity and the risk of developing atherosclerosis cardiovascular disease (ASCVD) for the first time in 10 years is unclear.MethodsData for this cross-sectional study came from the National Health and Nutrition Examination Survey (NHANES) from 2011 to 2020. We collected variable information related to 10-year ASCVD risk and visceral obesity reliable indicators [Visceral obesity index (VAI) and Lipid accumulation product (LAP)]. And we used multiple logistic regression to analyze the correlation of visceral obesity indicators (VAI and LAP) with 10-year ASCVD risk. In addition, we assessed the linear relationship between VAI or LAP and 10-year ASCVD risk by smoothing curve fitting. Finally, we conducted subgroup analysis and sensitivity analysis after excluding participants with extreme VAI and LAP values to ensure that we obtained accurate and reliable results.ResultsOur study included a total of 1,547 participants (mean age: 56.5 ± 10.1, 60% of males). The results of the multiple logistic regression showed that compared with participants with the lowest VAI in the 1st Quartile (≤0.79), the adjusted OR values for VAI and elevated 10-year ASCVD risk in Q3 (1.30–2.14), and Q4 (≥2.15) were 2.58 (95% CI: 1.24–5.36, P = 0.011), 15.14 (95% CI: 6.93–33.05, P < 0.001), respectively. Compared with participants with the lowest LAP in the 1st Quartile (≤28.29), the adjusted OR values for VAI and elevated 10-year ASCVD risk in Q3 (46.52–77.00), and Q4 (≥77.01) were 4.63 (95% CI: 2.18–9.82, P < 0.001), 16.94 (95% CI: 6.74–42.57, P < 0.001), respectively. Stratified analysis showed that the association between VAI or LAP and the first ASCVD event was more pronounced in males.ConclusionHigher VAI or LAP scores are significantly associated with elevated 10-year ASCVD risk in adults aged 40 to 79 in the USA, which suggested that monitoring visceral obesity is crucial to reduce the risk of a first ASCVD event

N\'eel-type skyrmion in WTe2/Fe3GeTe2 van der Waals heterostructure

The promise of high-density and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. At the same time, layered structures provide a new platform for the discovery of new physics and effects. Recently discovered long-range intrinsic magnetic orders in the two-dimensional van der Waals materials offer new opportunities. Here we demonstrate the Dzyaloshinskii-Moriya interaction and N\'eel-type skyrmions are induced at the WTe2/Fe3GeTe2 interface. Fe3GeTe2 is a ferromagnetic material with strong perpendicular magnetic anisotropy. We demonstrate that the strong spin orbit interaction in 1T'-WTe2 does induce a large interfacial Dzyaloshinskii-Moriya interaction at the interface with Fe3GeTe2 due to the inversion symmetry breaking to stabilize skyrmions. Transport measurements show the topological Hall effect in this heterostructure for temperatures below 100 K. Furthermore, Lorentz transmission electron microscopy is used to directly image N\'eel-type skyrmions along with aligned and stripe-like domain structure. This interfacial coupling induced Dzyaloshinskii-Moriya interaction is estimated to have a large energy of 1.0 mJ/m^2, which can stabilize the N\'eel-type skyrmions in this heterostructure. This work paves a path towards the skyrmionic devices based on van der Waals heterostructures.Comment: 32 pages, 4 figures in the main tex

Néel-type skyrmion in WTe2/Fe3GeTe2 van der Waals heterostructure.

The promise of high-density and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. At the same time, recently discovered long-range intrinsic magnetic orders in the two-dimensional van der Waals materials provide a new platform for the discovery of novel physics and effects. Here we demonstrate the Dzyaloshinskii-Moriya interaction and Néel-type skyrmions are induced at the WTe2/Fe3GeTe2 interface. Transport measurements show the topological Hall effect in this heterostructure for temperatures below 100 K. Furthermore, Lorentz transmission electron microscopy is used to directly image Néel-type skyrmion lattice and the stripe-like magnetic domain structures as well. The interfacial coupling induced Dzyaloshinskii-Moriya interaction is estimated to have a large energy of 1.0 mJ m-2. This work paves a path towards the skyrmionic devices based on van der Waals layered heterostructures

Electron Beam Lithography of Magnetic Skyrmions

The emergence of magnetic skyrmions, topological spin textures, has aroused tremendous interest in studying the rich physics related to their topology. While skyrmions promise high-density and energy-efficient magnetic memory devices for information technology, the manifestation of their nontrivial topology through single skyrmions and ordered and disordered skyrmion lattices could also give rise to many fascinating physical phenomena, such as chiral magnon and skyrmion glass states. Therefore, generating skyrmions at designated locations on a large scale, while controlling the skyrmion patterns, is the key to advancing topological magnetism. Here, a new, yet general, approach to the “printing” of skyrmions with zero-field stability in arbitrary patterns on a massive scale in exchange-biased magnetic multilayers is presented. By exploiting the fact that the antiferromagnetic order can be reconfigured by local thermal excitations, a focused electron beam with a graphic pattern generator to “print” skyrmions is used, which is referred to as skyrmion lithography. This work provides a route to design arbitrary skyrmion patterns, thereby establishing the foundation for further exploration of topological magnetism

Electrical Detection of Magnetic Skyrmions in a Magnetic Tunnel Junction

Abstract Magnetic skyrmions are promising information carriers for dense and energy‐efficient information storage owing to their small size, low driving‐current density, and topological stability. Electrical detection of skyrmions is a crucial requirement to drive skyrmion devices toward applications. The use of a magnetic tunnel junction (MTJ) is commonly suggested for this purpose as MTJs are key spintronic devices for large‐scale commercialization that can convert magnetic textures into electrical signals. To date, however, it has been challenging to realize skyrmions in MTJs due to incompatibility between standard skyrmion materials and highly efficient MTJ electrodes. Here, a material stack combining magnetic multilayers, which host 100 nm scale skyrmions, with a perpendicularly magnetized MTJ, is reported. The devices are designed so that the skyrmions in the multilayer are imprinted into the MTJ's free layer via magnetostatic interactions. The electrical response of a single skyrmion is successfully identified by employing simultaneous imaging of the magnetic texture and the electrical measurement of the MTJ resistance. The results are an important step toward all‐electrical detection of skyrmions