DIFFUSION AND ACTIVATION OF IMPLANTED ADDITIONS IN INDIUM ARSENIDE AND ANTIMONIDE

The intercommunication of the defects and additions induced during ion implantation and following thermic annealing in the indium arsenide and antimonide has been considered. The diffusion parameters of the magnesium in the indium antimonide and arsenide have been made accurate. The self-gettering process of the beryllium in the indium arsenide has been discovered. It has been determined that the beryllium in the indium antimonide and sulphur in the indium arsenide don't diffuse at post-implantation annealing. The photosensitive diode structures having the record parameters have been created with use of the layers in the indium arsenide alloyed by a sulphur.Available from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio

Processing experiments on non-Czochralski silicon sheet : MEPSDU support contract, quarterly technical report no. 1 for period October 14-December 31, 1980 /

Prepared by Motorola Incorporated, Semiconductor Group, Phoenix Arizona.Performed for the Jet Propulsion Laboratory, California Institute of Technology."DRL no. 150."Work performed under contract no. ;Mode of access: Internet

Sequential purification and crystal growth for the production of low cost silicon substrates : quarterly technical progress report no. 3, April 1-June 30, 1980 /

"August 1980.""Work Performed Under Contract No. AC02-77CH00178."Includes bibliographical references (page 27).Mode of access: Internet

Development of a polysilicon process based on chemical vapor deposition (phase 1) : second quarterly progress report, January 1-March 31, 1980 /

"May 1980.""DOE/JPL/955533-79-2."Cover title.Work performed under contract no. ;Mode of access: Internet

Sequential purification and crystal growth for the production of low cost silicon substrates : annual report, September 15, 1979-September 14, 1980 /

"Work Performed Under Contract No. AC02-77CH00178."Includes bibliographical references (page 73).Mode of access: Internet

Sequential purification and crystal growth for the production of low cost silicon substrates : quarterly technical progress report no. 1, September 15-December 31, 1979 /

"February 1980.""Work Performed Under Contract No. EG-77-C-01-4042."Includes bibliographical references (page 37).Mode of access: Internet

The establishment of a production-ready manufacturing process utilizing thin silicon substrates for solar cells : final report /

Also available on microfiche."The JPL Low-cost Solar Array Project is sponsored by the U.S. Department of Energy and forms part of the Solar Photovoltaic Conversion Program to initiate a major development of low-cost solar arrays. This work was performed for the Jet Propulsion Laboratory, California Institute of Technology by agreement between NASA and DOE.""JPL contract no. 955328.""October 1980.""DRD no. SE-5."Work performed under contract no.Mode of access: Internet

Phase 2 of the automated array assembly task of the low-cost silicon solar array project : final report for the period April 1, 1979-March 31, 1980 /

Prepared for the Jet Propulsion Laboratory, California Institute of Technology by agreement between NASA and DOE under JPL contract no. 954847.Work performed under contract no.Mode of access: Internet