DIFFUSION AND ACTIVATION OF IMPLANTED ADDITIONS IN INDIUM ARSENIDE AND ANTIMONIDE

Abstract

The intercommunication of the defects and additions induced during ion implantation and following thermic annealing in the indium arsenide and antimonide has been considered. The diffusion parameters of the magnesium in the indium antimonide and arsenide have been made accurate. The self-gettering process of the beryllium in the indium arsenide has been discovered. It has been determined that the beryllium in the indium antimonide and sulphur in the indium arsenide don't diffuse at post-implantation annealing. The photosensitive diode structures having the record parameters have been created with use of the layers in the indium arsenide alloyed by a sulphur.Available from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio