Addressing the double burden of malnutrition in Egypt: do conditional cash transfers have a role?

Many developing countries are undergoing rapid socio-economic changes that impact on health and its social distribution. These changes can occur so rapidly that there is a resulting co-existence of diseases of affluence and diseases of poverty. Priority setting for nutritional programs has focused on the alleviation of undernutrition in low income settings. However, evidence shows that in many Low-and-Middle Income Countries the prevalence of obesity among women is increasing and can coexist with childhood stunting. This dual burden of poor nutrition contributes to worsening health inequity between the poor and the rich. Global and national policy makers are looking for novel programs to replace social protection mechanisms deemed inefficient. Conditional Cash Transfer (CCT) programs have emerged as an increasingly popular poverty alleviation strategy with some positive results. However, there is evidence they may have a negative impact if the complexity of transition settings is not taken into account. In this paper, we review the nutritional situation in Egypt and compare two CCT programs (Mexico and Colombia) in an attempt to identify features that would address both child undernutrition and adult overnutrition. We conclude with suggestions for design of an Egyptian CCT program that would help maximise benefit to its beneficiaries

Sensitivity, noise and resolution in a beol-modified foundry-made isfet with miniaturized reference electrode for wearable point-of-care applications

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power integrated sensors, very little is known about their noise characterization when being operated in a liquid gate configuration. The noise characteristics in various regimes of their operation are important to select the most suitable conditions for signal-to-noise ratio (SNR) and power consumption. This work reports systematic DC, transient, and noise characterizations and models of a back-end of line (BEOL)-modified foundry-made ISFET used as pH sensor. The aim is to determine the sensor sensitivity and resolution to pH changes and to calibrate numerical and lumped element models, capable of supporting the interpretation of the experimental findings. The experimental sensitivity is approximately 40 mV/pH with a normalized resolution of 5 mpH per \ub5m2, in agreement with the literature state of the art. Differences in the drain current noise spectra between the ISFET and MOSFET configurations of the same device at low currents (weak inversion) suggest that the chemical noise produced by the random binding/unbinding of the H+ ions on the sensor surface is likely the dominant noise contribution in this regime. In contrast, at high currents (strong inversion), the two configurations provide similar drain noise levels suggesting that the noise originates in the underlying FET rather than in the sensing region

Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures

Characterization, modeling, and development of cryo-temperature CMOS technologies (cryo-CMOS) have significantly progressed to help overcome the interconnection bottleneck between qubits and the readout interface in quantum computers. Nevertheless, available compact models still fail to predict the deviation of 1/f noise from the expected linear scaling with temperature ( $\textit{T}$ ), referred to as “excess 1/f noise”, observed at cryogenic temperatures. In addition, 1/f noise represents one of the main limiting factors for the decoherence time of qubits. In this article, we extensively characterize low-frequency noise on commercial 28-nm CMOS and on research-grade Ge-channel MOSFETs at temperatures ranging from 370 K down to 4 K. Our investigations exclude electron heating and bulk dielectric defects as possible causes of the excess 1/f noise at low temperatures. We show further evidence for a strong correlation between the excess 1/f noise and the saturation of the subthreshold swing (SS) observed at low temperatures. The most plausible cause of the excess noise is found in band tail states in the channel acting as additional capture/emission centers at cryogenic temperatures

Avulsão do tendão do extensor digital longo associada à luxação patelar lateral crônica em cão da raça Poodle

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Geomorphology of the north-eastern coast of Gozo (Malta, Mediterranean Sea)

The paper presents a geomorphological map of the north-eastern coast of the Island of Gozo (Malta) integrating inland and offshore areas at the scale 1:15,000. The map derives from the integration of different methods, such as aerial photo interpretation, field surveys and analysis of seafloor bathymetry. The landforms identified on land were shaped by coastal, fluvial, karst and gravity-induced processes, and some of them prolong on the seafloor. Most of the submerged landforms appear to have been modelled in subaerial conditions during sea-level lowstands, having been sealed by the rising sea in post-glacial times. Two sketches accompany the Main Map showing the type and distribution of coastal geomorphotypes and the land cover of the area

Efeitos do carprofeno no ganho de força tênsil muscular e cutânea em ratas (Rattus norvegicus) submetidas à Laparorrafia mediana

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Emprego de n-butil-cianoacrilato associado ou não à sutura na síntese de gastrotomias em ratos (Rattus norvegicus)

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A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions

We propose a simple expression to relate the total excess noise factor of a single-carrier multiplication staircase avalanche photodiode (APD) to the excess noise factor and gain given by the individual conduction band discontinuities. The formula is valid when electron impact ionization dominates hole impact ionization; hence, it is especially suited for staircase APDs with In-rich multiplication regions, as opposed, for example, to GaAs/AlGaAs systems where hole ionization plays an important role. The formula has been verified by accurate means of numerical simulations based on a newly developed nonlocal history dependent impact ionization model

Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization

A recently developed nonlocal history dependent model for electron and hole impact ionization is used to compute the gain and the excess noise factor in avalanche photodiodes featuring heterojunctions of III-V compound semiconductors while accounting for both carriers. The model has been calibrated with measurements by our group, as well as on noise versus gain data from the literature. We explore the avalanche photodiode design trade-offs related to the number of GaAs/AlGaAs conduction band steps for X-ray spectroscopy applications