Complex Impedance Measurements on the Steady State Behaviors of a 10-cell PEFC Stack

Experimental studies on the behavior of a Polymer Electrolyte Fuel Cell (PEFC) stack were conducted by performing complex impedance measurements. Initially, the steady state characteristics of a 10-cell stack were measured, and the power function of the DC current was obtained to represent these characteristics. The frequency properties of the complex impedance apparatus were investigated in order to clarify the limitations of frequency measurement. The components of complex impedance, the real and imaginary parts, were rearranged into two vectors to analyze their frequency responses to power and output DC current

Simulation Data Analysis by Virtual Reality System

We introduce new software for analysis of time-varying simulation data and new approach for contribution of simulation to experiment by virtual reality (VR) technology. In the new software, the objects of time-varying field are visualized in VR space and the particle trajectories in the time-varying electromagnetic field are also traced. In the new approach, both simulation results and experimental device data are simultaneously visualized in VR space. These developments enhance the study of the phenomena in plasma physics and fusion plasmas

Label-free multiphoton excitation imaging as a promising diagnostic tool for breast cancer

Histopathological diagnosis is the ultimate method of attaining the final diagnosis; however, the observation range is limited to the two-dimensional plane, and it requires thin slicing of the tissue, which limits diagnostic information. To seek solutions for these problems, we proposed a novel imaging-based histopathological examination. We used the multiphoton excitation microscopy (MPM) technique to establish a method for visualizing unfixed/unstained human breast tissues. Under near-infrared ray excitation, fresh human breast tissues emitted fluorescent signals with three major peaks, which enabled visualizing the breast tissue morphology without any fixation or dye staining. Our study using human breast tissue samples from 32 patients indicated that experienced pathologists can estimate normal or cancerous lesions using only these MPM images with a kappa coefficient of 1.0. Moreover, we developed an image classification algorithm with artificial intelligence that enabled us to automatically define cancer cells in small areas with a high sensitivity of ≥0.942. Taken together, label-free MPM imaging is a promising method for the real-time automatic diagnosis of breast cancer.This is the pre-peer reviewed version of the following article:Matsui T., Iwasa A., Mimura M., et al. Label-free multiphoton excitation imaging as a promising diagnostic tool for breast cancer. Cancer Science 113, 2916 (2022), which has been published in final form at https://doi.org/10.1111/cas.15428. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving

Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na-Flux Method and Enlargement of the Substrate Surpassing 6 Inches

Imanishi M., Usami S., Murakami K., et al. Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na-Flux Method and Enlargement of the Substrate Surpassing 6 Inches. Physica Status Solidi - Rapid Research Letters, (2024); https://doi.org/10.1002/pssr.202400106.The Na-flux method is expected to be a key GaN growth technique for obtaining ideal bulk GaN crystals. Herein, the structural quality of the latest GaN crystals grown using the Na-flux method and, for the first time, the characteristics of a vertical transistor fabricated on a GaN substrate grown using this method are discussed. Vertical transistors exhibit normally off operation with a gate voltage threshold exceeding 2 V and a maximum drain current of 3.3 A during the on-state operation. Additionally, it demonstrates a breakdown voltage exceeding 600 V and a low leakage current during off-state operation. It is also described that the variation in the on-resistance can be minimized using GaN substrates with minimal off-angle variations. This is crucial for achieving the large-current chips required for future demonstration of actual devices. In addition, the reverse I–V characteristics of the parasitic p–n junction diode (PND) structures indicate a reduction in the number of devices with a significant leakage current compared to commercially available GaN substrates. Finally, a circular GaN substrate with a diameter of 161 mm, surpassing 6 inches, grown using the Na-flux method is demonstrated, making it the largest GaN substrate aside from those produced through the tiling technique

Layer thickness dependence of the current induced effective field vector in Ta|CoFeB|MgO

The role of current induced effective magnetic field in ultrathin magnetic heterostructures is increasingly gaining interest since it can provide efficient ways of manipulating magnetization electrically. Two effects, known as the Rashba spin orbit field and the spin Hall spin torque, have been reported to be responsible for the generation of the effective field. However, quantitative understanding of the effective field, including its direction with respect to the current flow, is lacking. Here we show vector measurements of the current induced effective field in Ta|CoFeB|MgO heterostructrures. The effective field shows significant dependence on the Ta and CoFeB layers' thickness. In particular, 1 nm thickness variation of the Ta layer can result in nearly two orders of magnitude difference in the effective field. Moreover, its sign changes when the Ta layer thickness is reduced, indicating that there are two competing effects that contribute to the effective field. The relative size of the effective field vector components, directed transverse and parallel to the current flow, varies as the Ta thickness is changed. Our results illustrate the profound characteristics of just a few atomic layer thick metals and their influence on magnetization dynamics

Therapeutic Potential of Intracerebroventricular Replacement of Modified Human β-Hexosaminidase B for GM2 Gangliosidosis

To develop a novel enzyme replacement therapy for neurodegenerative Tay-Sachs disease (TSD) and Sandhoff disease (SD), which are caused by deficiency of β-hexosaminidase (Hex) A, we designed a genetically engineered HEXB encoding the chimeric human β-subunit containing partial amino acid sequence of the α-subunit by structure-based homology modeling. We succeeded in producing the modified HexB by a Chinese hamster ovary (CHO) cell line stably expressing the chimeric HEXB, which can degrade artificial anionic substrates and GM2 ganglioside in vitro, and also retain the wild-type (WT) HexB-like thermostability in the presence of plasma. The modified HexB was efficiently incorporated via cation-independent mannose 6-phosphate receptor into fibroblasts derived from Tay-Sachs patients, and reduced the GM2 ganglioside accumulated in the cultured cells. Furthermore, intracerebroventricular administration of the modified HexB to Sandhoff mode mice restored the Hex activity in the brains, and reduced the GM2 ganglioside storage in the parenchyma. These results suggest that the intracerebroventricular enzyme replacement therapy involving the modified HexB should be more effective for Tay-Sachs and Sandhoff than that utilizing the HexA, especially as a low-antigenic enzyme replacement therapy for Tay-Sachs patients who have endogenous WT HexB