3 research outputs found
Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy
Epitaxial La doped BaSnO3 films were grown in an adsorption controlled regime
by molecular beam epitaxy, where the excess volatile SnOx desorbs from the film
surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183
cm^2 V^-1 s^-1 at room temperature and 400 cm^2 V^-1 s^-1 at 10 K, despite the
high concentration (1.2x10^11 cm^-2) of threading dislocations present. In
comparison to other reports, we observe a much lower concentration of (BaO)2
Ruddlesden Popper crystallographic shear faults. This suggests that in addition
to threading dislocations that other defects possibly (BaO)2 crystallographic
shear defects or point defects significantly reduce the electron mobility
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Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy
Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm2 V-1 s-1 at room temperature and 400 cm2 V-1 s-1 at 10 K despite the high concentration (1.2 × 1011 cm-2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects - possibly (BaO)2 crystallographic shear defects or point defects - significantly reduce the electron mobility
Epitaxial integration and properties of SrRuO3 on silicon
We report the integration of SrRuO3, one of the most widely used oxide
electrode materials in functional oxide heterostructures, with silicon using
molecular-beam epitaxy and an SrTiO3 buffer layer. The resulting
SrRuO3 film has a rocking curve full width at half maximum of 0.01°, a
resistivity at room temperature of 250 μΩ cm, a residual resistivity
ratio (ρ300 Kρ4 K) of 11, and
a paramagnetic-to-ferromagnetic transition temperature of ∼160 K. These structural,
electrical, and magnetic properties compare favorably to the best reported values for
SrRuO3 films on silicon and rival those of epitaxial SrRuO3 films
produced directly on SrTiO3 single crystals by thin film growth techniques
other than molecular-beam epitaxy. These high quality SrRuO3 films with
metallic conductivity on silicon are relevant to integrating multi-functional oxides with
the workhorse of semiconductor technology, silicon