1 research outputs found
Amphoteric Nature of Sn in CdS Nanowires
High-quality CdS nanowires with uniform
Sn doping were synthesized
using a Sn-catalyzed chemical vapor deposition method. X-ray diffraction
and transmission electron microscopy demonstrate the single crystalline
wurtzite structure of the CdS/Sn nanowires. Both donor and acceptor
levels, which originate from the amphoteric nature of Sn in II–VI
semiconductors, are identified using low-temperature microphotoluminescence.
This self-compensation effect was cross examined by gate modulation
and temperature-dependent electrical transport measurement. They show
an overall n-type behavior with relatively low carrier concentration
and low carrier mobilities. Moreover, two different donor levels due
to intrinsic and extrinsic doping could be distinguished. They agree
well with both the electrical and optical data