15 research outputs found

    Labour market regulation and professional sport: The case of the Victorian Football League’s Coulter Law, 1930-1970

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    In most professional team sports, salary caps – first used in the mid-1980s – stabilise the financial position of teams and promote balanced competitions. Teams that do not comply with labour market regulations face heavy penalties and there is a debate about whether such labour markets should operate like competitive markets in general – with wages directing players to the teams that value their contributions most. Analysis of earlier restrictions on the mobility of players and the movement of wages may raise new questions about the effects of noncompliance. The Coulter Law was a set of Victorian Football League (VFL) recruiting and payment rules that operated from 1930 to 1970. The conventional view – that most VFL clubs breached the maximum player wage rules to maximise the utility derived from winning games – is supported only by anecdotal evidence. A new data set reveals that the Coulter Law did restrict earnings in the VFL, except for a small number of elite players. Clubs allowed players to take up more lucrative jobs in other leagues and their subsequent on-field performance reflected the level of talent of replacement players.

    Evading labour market regulations to preserve team performance : Evidence from the Victorian Football League, 1930-70

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    Sports teams that seek to maximise the number of wins, rather than profits, may not comply with league labour market regulations that compress payroll structures to promote even competition. This strategic behaviour depends on others, as teams choose a strategy to create team incentives, to which rivals will respond. A case study of four teams in a semi-professional Australian Rules football league tests the effectiveness of strategies to evade these regulations on winning percentages. Both compliance and non-compliance within this labour market regulation regime, based on different wage structures and talent distribution, were effective strategies to improve team performance

    Collective formation of misfit dislocations at the critical thickness

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    The critical thickness constitutes a vital parameter in heterostructure epitaxy engineering as it determines the limit where crystal coherency is lost. By finite element modeling of the total strain relaxation in finite size heterostructure nanowires, we show that the equilibrium configuration changes abruptly at the critical thickness from a fully elastically strained structure to a structure with a network of MDs. We show how the interdependent MD relaxation changes as a function of the lattice mismatch. These findings suggest that a collective formation of MDs takes place when the growing heterostructure layer exceeds the critical thickness.Comment: 7 pages, 4 figures main, 4 pages, 4 figures supplementa

    Band Structure Extraction at Hybrid Narrow-Gap Semiconductor-Metal Interfaces

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    The design of epitaxial semiconductor-superconductor and semiconductor-metal quantum devices requires a detailed understanding of the interfacial electronic band structure. However, the band alignment of buried interfaces is difficult to predict theoretically and to measure experimentally. This work presents a procedure that allows to reliably determine critical parameters for engineering quantum devices; band offset, band bending profile, and number of occupied quantum well subbands of interfacial accumulation layers at semiconductor-metal interfaces. Soft X-ray angle-resolved photoemission is used to directly measure the quantum well states as well as valence bands and core levels for the InAs(100)/Al interface, an important platform for Majorana-zero-mode based topological qubits, and demonstrate that the fabrication process strongly influences the band offset, which in turn controls the topological phase diagrams. Since the method is transferable to other narrow gap semiconductors, it can be used more generally for engineering semiconductor-metal and semiconductor-superconductor interfaces in gate-tunable superconducting devices.ISSN:2198-384
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